RESISTOR
    1.
    发明公开
    RESISTOR 审中-公开

    公开(公告)号:US20240242860A1

    公开(公告)日:2024-07-18

    申请号:US18153830

    申请日:2023-01-12

    CPC classification number: H01C1/02

    Abstract: The present invention proposes a resistor with two barrier layers covered by a protection layer, at both sides of the resistor to resist the moisture and sulphide penetration from both sides. The barrier can enhance the anti-corrosion ability of the resister. For a metallic barrier, a distance to the resistance layer and the internal electrode layer is necessary.

    RESISTOR ELEMENT
    2.
    发明申请

    公开(公告)号:US20210304924A1

    公开(公告)日:2021-09-30

    申请号:US16929952

    申请日:2020-07-15

    Abstract: The present invention provides a structure of resistor element, which comprises a protective layer around electrodes to elongate the path of corrosion when gaseous water or sulfur leaking in. Therefore, the protective layer structure can elongate the life of the resistor element.

    IGNITION RESISTOR AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20230343491A1

    公开(公告)日:2023-10-26

    申请号:US18304926

    申请日:2023-04-21

    CPC classification number: H01C1/032 H01C1/14 H01C1/024

    Abstract: An ignition resistor comprises a substrate, two antistatic layers, an ignition structure and a protective layer. The ignition structure is attached to the upper surface of the substrate through an adhesive layer, wherein the ignition structure includes two electrode portions and an ignition portion, the two electrode portions are respectively connected to two opposite ends of the ignition portion. The two antistatic layers are respectively disposed on the opposite sides of the ignition portion and the upper surface of the substrate between the two electrode portions, and the protective layer covers the ignition portion.

    METHOD FOR MANUFACTURING THIN FILM RESISTIVE LAYER

    公开(公告)号:US20210305031A1

    公开(公告)日:2021-09-30

    申请号:US16929796

    申请日:2020-07-15

    Abstract: The present invention discloses a method for preparing a thin film resistive layer. A tantalum nitride layer is formed on the surface of a substrate by a magnetron sputtering method, then a tantalum pentoxide layer is formed on the tantalum nitride layer by same method. Finally, both the tantalum nitride layer and the tantalum pentoxide layer are treated with an annealing process to obtain the thin film resistive layer with a low resistance change rate.

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