公开(公告)号：US11211331B2

公开(公告)日：2021-12-28

申请号：US16749335

申请日：2020-01-22

Applicant: Vanguard International Semiconductor Corporation

Inventor： Yung-Fong Lin ,  Li-Wen Chuang ,  Jui-Hung Yu ,  Cheng-Tao Chou ,  Chun-Hsu Chen ,  Yu-Chieh Chou

IPC: H01L23/535 ,  H01L21/74 ,  H01L21/308 ,  H01L21/311 ,  H01L21/768

Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a substrate and a seed layer on the substrate. The substrate includes a base and a composite layer encapsulating the base. The semiconductor structure also includes an epitaxial layer on the seed layer. The semiconductor structure also includes a semiconductor device on the epitaxial layer, and an interlayer dielectric layer on the epitaxial layer. The interlayer dielectric layer covers the semiconductor device. The semiconductor structure further includes a via structure that penetrates at least the composite layer of the substrate and is in contact with the base.