公开(公告)号：US20160230268A1

公开(公告)日：2016-08-11

申请号：US15133961

申请日：2016-04-20

Applicant: Veeco Instruments, Inc.

Inventor： Boris L. Druz ,  Vincent Ip ,  Adrian Devasahayam

IPC: C23C14/34 ,  H01J37/305 ,  C23C14/10 ,  C23C14/14 ,  C23C14/35 ,  C23C14/08

CPC classification number: C23C14/3442 ,  C23C14/081 ,  C23C14/083 ,  C23C14/10 ,  C23C14/14 ,  C23C14/16 ,  C23C14/225 ,  C23C14/35 ,  C23C14/354 ,  H01J37/3053

Abstract: An ion etch assisted deposition apparatus deposits a thin film upon a substrate having a three dimensional feature, using an ion etching source and deposition source arranged at similar angles relative to the substrate and at an angle α relative to each other. The angle α is selected to be substantially equal the supplement of the angle α′ formed between the three dimensional feature on the substrate and the substrate surface. In this configuration the relative flux of energetic etch ions and deposition atoms is adjusted to prevent the growth of poor quality deposited material.

Abstract translation: 离子蚀刻辅助沉积设备使用离子蚀刻源和沉积源以相对于衬底相似的角度相对于彼此成角度α将薄膜沉积在具有三维特征的衬底上。 角度α选择为基本上等于在基板上的三维特征与基板表面之间形成的角度α'的补充。 在该配置中，调节能量蚀刻离子和沉积原子的相对通量以防止劣质沉积材料的生长。