公开(公告)号：US10167571B2

公开(公告)日：2019-01-01

申请号：US13840164

申请日：2013-03-15

Applicant: Veeco Instruments, Inc.

Inventor： Sandeep Krishnan ,  William E. Quinn ,  Jeffery S. Montgomery ,  Joshua Mangum ,  Lukas Urban

IPC: C30B25/12 ,  B23P19/04 ,  H01L21/687 ,  C23C16/458

Abstract: A wafer carrier and methods of making the same for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. A thermally-insulating spacer is situated at least partially in the at least one wafer retention pocket and arranged to maintain a spacing between the peripheral wall surface and the wafer, the spacer being constructed from a material having a thermal conductivity less than a thermal conductivity of the wafer carrier such that the spacer limits heat conduction from portions of the wafer carrier body to the wafer. The wafer carrier further includes a spacer retention feature that engages with the spacer and includes a surface oriented to prevent centrifugal movement of the spacer when subjected to rotation about the central axis.

公开(公告)号：US20140261187A1

公开(公告)日：2014-09-18

申请号：US13840164

申请日：2013-03-15

Applicant: Veeco Instruments, Inc.

Inventor： Sandeep Krishnan ,  Wiliam E. Quinn ,  Jeffery S. Montgomery ,  Joshua Mangum ,  Lukas Urban ,  Alexander Gurary

IPC: C30B25/12 ,  B23P19/04

CPC classification number: C30B25/12 ,  B23P19/04 ,  C23C16/4584 ,  C23C16/4585 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T29/49826

Abstract: A wafer carrier and methods of making the same for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. A thermally-insulating spacer is situated at least partially in the at least one wafer retention pocket and arranged to maintain a spacing between the peripheral wall surface and the wafer, the spacer being constructed from a material having a thermal conductivity less than a thermal conductivity of the wafer carrier such that the spacer limits heat conduction from portions of the wafer carrier body to the wafer. The wafer carrier further includes a spacer retention feature that engages with the spacer and includes a surface oriented to prevent centrifugal movement of the spacer when subjected to rotation about the central axis.

Abstract translation: 一种晶片载体及其制造方法，用于通过化学气相沉积在一个或多个晶片上生长外延层的系统中。 晶片载体包括凹入其体内的晶片保留孔。 隔热隔离物至少部分地位于至少一个晶片保持袋中，并且被布置成保持周壁表面和晶片之间的间隔，该隔离物由导热率小于热导率的材料构成 晶片载体使得间隔物限制从晶片载体的部分到晶片的热传导。 晶片载体还包括间隔件保持部件，其与间隔件接合并且包括定向成防止间隔件围绕中心轴旋转时的离心运动的表面。

公开(公告)号：US20170053049A1

公开(公告)日：2017-02-23

申请号：US15238175

申请日：2016-08-16

Applicant: Veeco Instruments Inc.

Inventor： Lukas Urban ,  Sandeep Krishnan

IPC: G06F17/50 ,  C23C16/18 ,  C23C16/52

CPC classification number: G06F17/5009 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  C30B25/12 ,  G06F2217/80 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771

Abstract: Improvements to the heating uniformity of a wafer carrier for a chemical vapor deposition (CVD) system can be made based on a computational thermal model built according physical and operational characteristics of the CVD system. Operation of the thermal model is simulated, where a process recipe to be carried out on the CVD system is modeled, including heat transfers taking place in the virtual CVD system, to produce a set of thermal-spatial non-uniformities in at least one region of interest of a virtual wafer carrier. Structural corrections to be made to the pocket floor of each of the at least one wafer retention pocket are determined based on the set of thermal-spatial non-uniformities and on a predefined thermal-pocket floor relation that defines at least one design rule for correcting the pocket floor to achieve an increase in thermal uniformity throughout the at least one region of interest.

Abstract translation: 可以基于根据CVD系统的物理和操作特性构建的计算热模型来进行用于化学气相沉积（CVD）系统的晶片载体的加热均匀性的改进。 模拟热模型的操作，其中将对CVD系统进行的处理配方进行建模，包括在虚拟CVD系统中进行的热传递，以在至少一个区域中产生一组热空间不均匀性 感兴趣的虚拟晶片载体。 基于热 - 空间不均匀性的集合以及限定了用于校正的至少一个设计规则的预定义的热袋底层关系来确定要对至少一个晶片保持袋中的每一个的口袋地板进行结构校正 口袋地板以实现整个所述至少一个感兴趣区域的热均匀性的增加。

公开(公告)号：US11248295B2

公开(公告)日：2022-02-15

申请号：US16205613

申请日：2018-11-30

Applicant: Veeco Instruments Inc.

Inventor： Sandeep Krishnan ,  Lukas Urban

IPC: C23C16/458 ,  C30B25/12

Abstract: A wafer carrier for use in a chemical vapor deposition (CVD) system includes a plurality of wafer retention pockets, each having a peripheral wall surface surrounding a floor surface and defining a periphery of that wafer retention pocket. Each wafer retention pocket has a periphery with a shape defined by at least a first arc having a first radius of curvature situated around a first arc center and a second arc having a second radius of curvature situated around a second arc center. The second arc is different from the first arc, either by its radius of curvature, arc center, or both.

公开(公告)号：US20190169745A1

公开(公告)日：2019-06-06

申请号：US16205613

申请日：2018-11-30

Applicant: Veeco Instruments Inc.

Inventor： Sandeep Krishnan ,  Lukas Urban

IPC: C23C16/458 ,  C30B25/12

Abstract: A wafer carrier for use in a chemical vapor deposition (CVD) system includes a plurality of wafer retention pockets, each having a peripheral wall surface surrounding a floor surface and defining a periphery of that wafer retention pocket. Each wafer retention pocket has a periphery with a shape defined by at least a first arc having a first radius of curvature situated around a first arc center and a second arc having a second radius of curvature situated around a second arc center. The second arc is different from the first arc, either by its radius of curvature, arc center, or both.

公开(公告)号：US20170076972A1

公开(公告)日：2017-03-16

申请号：US15266308

申请日：2016-09-15

Applicant: Veeco Instruments Inc.

Inventor： Sandeep Krishnan ,  Lukas Urban ,  Alexander Gurary ,  Keng Moy ,  Ajit Paranjpe

IPC: H01L21/687

CPC classification number: H01L21/68771 ,  H01L21/68757 ,  H01L21/68764 ,  H01L21/68785 ,  H01L21/68792

Abstract: A wafer carrier for a plurality of wafers, the wafer carrier having a platen with a plurality of openings and a plurality of wafer retention platforms, the platen configured to rotate about a first axis, the plurality of wafer retention platforms configured to rotate about respective second axes, each of the wafer retention platforms rotatably coupled to one of the plurality of openings by friction reducing bearings, the platen and the plurality of wafer retention platforms and the friction reducing bearings all being constructed of the same material.

Abstract translation: 用于多个晶片的晶片载体，所述晶片载体具有带有多个开口的压板和多个晶片保持平台，所述压板被配置为围绕第一轴线旋转，所述多个晶片保持平台被配置为围绕相应的第二 每个晶片保持平台通过摩擦减小轴承可旋转地联接到多个开口中的一个开口，压板和多个晶片保持平台和减摩轴承全部由相同的材料构成。

公开(公告)号：US10145013B2

公开(公告)日：2018-12-04

申请号：US14605497

申请日：2015-01-26

Applicant: Veeco Instruments, Inc.

Inventor： Sandeep Krishnan ,  Lukas Urban

IPC: C30B25/12 ,  C23C16/458

Abstract: A wafer carrier for use in a chemical vapor deposition (CVD) system includes a plurality of wafer retention pockets, each having a peripheral wall surface surrounding a floor surface and defining a periphery of that wafer retention pocket. Each wafer retention pocket has a periphery with a shape defined by at least a first arc having a first radius of curvature situated around a first arc center and a second arc having a second radius of curvature situated around a second arc center. The second arc is different from the first arc, either by its radius of curvature, arc center, or both.

公开(公告)号：US20150211148A1

公开(公告)日：2015-07-30

申请号：US14605497

申请日：2015-01-26

Applicant: Veeco Instruments, Inc.

Inventor： Sandeep Krishnan ,  Lukas Urban

IPC: C30B25/12

CPC classification number: C23C16/4584 ,  C23C16/458 ,  C30B25/12 ,  Y10T29/49

Abstract: A wafer carrier for use in a chemical vapor deposition (CVD) system includes a plurality of wafer retention pockets, each having a peripheral wall surface surrounding a floor surface and defining a periphery of that wafer retention pocket. Each wafer retention pocket has a periphery with a shape defined by at least a first arc having a first radius of curvature situated around a first arc center and a second arc having a second radius of curvature situated around a second arc center. The second arc is different from the first arc, either by its radius of curvature, arc center, or both.

Abstract translation: 用于化学气相沉积（CVD）系统的晶片载体包括多个晶片保持袋，每个晶片保持袋具有围绕地板表面的周边壁表面并且限定该晶片保留袋的周边。 每个晶片保留袋具有由至少第一弧限定的形状的周边，该第一弧具有围绕第一弧形中心的第一曲率半径，以及具有围绕第二弧形中心的第二曲率半径的第二弧。 第二个弧与第一个弧不同，不论是曲率半径，圆弧中心还是两者。