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    KEYED WAFER CARRIER
    1.
    发明申请
    KEYED WAFER CARRIER 审中-公开

    公开(公告)号：US20170191157A1

    公开(公告)日：2017-07-06

    申请号：US15464898

    申请日：2017-03-21

    Applicant: Veeco Instruments Inc.

    Inventor： Sandeep Krishnan ,  Keng Moy ,  Alex Gurary ,  Matthew King ,  Vadim Boguslavskiy ,  Steven Krommenhoek

    IPC: C23C16/458 ,  H01L21/687 ,  C23C16/46

    CPC classification number: C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

    Abstract: A structure for a chemical vapor deposition reactor desirably includes a reaction chamber having an interior, a spindle mounted in the reaction chamber, and a wafer carrier releasably mounted onto the spindle for rotation therewith. The spindle desirably has a shaft extending along a vertical rotational axis and a key projecting outwardly from the shaft. The wafer carrier preferably has a body defining oppositely-facing top and bottom surfaces and at least one wafer-holding feature configured so that a wafer can be held therein with a surface of the wafer exposed at the top surface of the body. The wafer carrier desirably further has a recess extending into the body from the bottom surface of the body and a keyway projecting outwardly from a periphery of the recess along a first transverse axis. The shaft preferably is engaged in the recess and the key preferably is engaged into the keyway.

    WAFER CARRIER WITH TEMPERATURE DISTRIBUTION CONTROL
    2.
    发明申请
    WAFER CARRIER WITH TEMPERATURE DISTRIBUTION CONTROL 有权
    带有温度分配控制的散热器

    公开(公告)号：US20140261698A1

    公开(公告)日：2014-09-18

    申请号：US13827495

    申请日：2013-03-14

    Applicant: VEECO INSTRUMENTS INC.

    Inventor： Sandeep Krishnan ,  Alexander I. Gurary ,  Keng Moy

    IPC: C30B25/12 ,  C30B25/10

    CPC classification number: C30B25/12 ,  C23C16/458 ,  C23C16/4586 ,  C30B25/10 ,  C30B29/40 ,  Y10T137/0318

    Abstract: Wafer carrier arranged to hold a plurality wafers and to inject a fill gas into gaps between the wafers and the wafer carrier for enhanced heat transfer and to promote uniform temperature of the wafers. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers. In various embodiments, the wafer carrier utilizes at least one plenum structure contained within the wafer carrier to source a plurality of weep holes for passing a fill gas into the wafer retention pockets of the wafer carrier. The plenum(s) promote the uniformity of the flow, thus providing efficient heat transfer and enhanced uniformity of wafer temperatures.

    Abstract translation: 晶片载体布置成保持多个晶片并且将填充气体注入到晶片和晶片载体之间的间隙中，以增强热传递并促进晶片的均匀温度。 该装置被布置成改变填充气体的组成，流速或两者，以便抵消晶片的不期望的温度不均匀图案。 在各种实施例中，晶片载体利用包含在晶片载体内的至少一个增压室结构来源出多个用于使填充气体进入晶片载体的晶片保持腔的漏孔。 增压室促进流动的均匀性，从而提供有效的热传递和提高晶圆温度的均匀性。

    PLANETARY WAFER CARRIERS
    3.
    发明申请
    PLANETARY WAFER CARRIERS 审中-公开
    运输轮运输车

    公开(公告)号：US20170076972A1

    公开(公告)日：2017-03-16

    申请号：US15266308

    申请日：2016-09-15

    Applicant: Veeco Instruments Inc.

    Inventor： Sandeep Krishnan ,  Lukas Urban ,  Alexander Gurary ,  Keng Moy ,  Ajit Paranjpe

    IPC: H01L21/687

    CPC classification number: H01L21/68771 ,  H01L21/68757 ,  H01L21/68764 ,  H01L21/68785 ,  H01L21/68792

    Abstract: A wafer carrier for a plurality of wafers, the wafer carrier having a platen with a plurality of openings and a plurality of wafer retention platforms, the platen configured to rotate about a first axis, the plurality of wafer retention platforms configured to rotate about respective second axes, each of the wafer retention platforms rotatably coupled to one of the plurality of openings by friction reducing bearings, the platen and the plurality of wafer retention platforms and the friction reducing bearings all being constructed of the same material.

    Abstract translation: 用于多个晶片的晶片载体，所述晶片载体具有带有多个开口的压板和多个晶片保持平台，所述压板被配置为围绕第一轴线旋转，所述多个晶片保持平台被配置为围绕相应的第二 每个晶片保持平台通过摩擦减小轴承可旋转地联接到多个开口中的一个开口，压板和多个晶片保持平台和减摩轴承全部由相同的材料构成。

    Wafer carrier with temperature distribution control
    4.
    发明授权
    Wafer carrier with temperature distribution control 有权
    具有温度分布控制的晶圆载体

    公开(公告)号：US09273413B2

    公开(公告)日：2016-03-01

    申请号：US13827495

    申请日：2013-03-14

    Applicant: Veeco Instruments Inc.

    Inventor： Sandeep Krishnan ,  Alexander I. Gurary ,  Keng Moy

    IPC: C30B25/12 ,  C30B25/10 ,  C23C16/458 ,  C30B29/40

    CPC classification number: C30B25/12 ,  C23C16/458 ,  C23C16/4586 ,  C30B25/10 ,  C30B29/40 ,  Y10T137/0318

    Abstract: Wafer carrier arranged to hold a plurality wafers and to inject a fill gas into gaps between the wafers and the wafer carrier for enhanced heat transfer and to promote uniform temperature of the wafers. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers. In various embodiments, the wafer carrier utilizes at least one plenum structure contained within the wafer carrier to source a plurality of weep holes for passing a fill gas into the wafer retention pockets of the wafer carrier. The plenum(s) promote the uniformity of the flow, thus providing efficient heat transfer and enhanced uniformity of wafer temperatures.

    Abstract translation: 晶片载体布置成保持多个晶片并且将填充气体注入到晶片和晶片载体之间的间隙中，以增强热传递并促进晶片的均匀温度。 该装置被布置成改变填充气体的组成，流速或两者，以便抵消晶片的不期望的温度不均匀图案。 在各种实施例中，晶片载体利用包含在晶片载体内的至少一个增压室结构来源出多个用于使填充气体进入晶片载体的晶片保持腔的漏孔。 增压室促进流动的均匀性，从而提供有效的热传递和提高晶圆温度的均匀性。

    Self-cleaning shutter for CVD reactor
    5.
    发明授权
    Self-cleaning shutter for CVD reactor 有权
    用于CVD反应器的自清洁快门

    公开(公告)号：US09388493B2

    公开(公告)日：2016-07-12

    申请号：US13736439

    申请日：2013-01-08

    Applicant: Veeco Instruments Inc.

    Inventor： Chenghung Paul Chang ,  Keng Moy ,  Alexander I. Gurary

    IPC: C23C16/44 ,  C23C16/458

    CPC classification number: C23C16/4407 ,  C23C16/4409 ,  C23C16/4585

    Abstract: A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor can include a reaction chamber having an interior and an entry port for insertion and removal of substrates, a gas inlet manifold communicating with the interior of the chamber for admitting process gasses to form a deposit on substrates held within the interior, a shutter mounted to the chamber, and one or more cleaning elements mounted within the chamber. The shutter can be movable between (i) a run position in which the cleaning elements are remote from the exhaust channel and (ii) a cleaning position in which the one or more cleaning elements engage with the shutter so that the cleaning elements remove deposited particles from the shutter upon movement of the shutter to the cleaning position.

    Abstract translation: 提供化学气相沉积反应器和晶片处理方法。 反应器可以包括具有内部和用于插入和移除基板的入口的反应室，与室的内部连通的气体入口歧管，用于允许工艺气体以在保持在内部的基板上形成沉积物，快门安装 并且安装在腔室内的一个或多个清洁元件。 快门可以在（i）清洁元件远离排气通道的行进位置和（ii）清洁位置之间移动，其中一个或多个清洁元件与快门接合，使得清洁元件去除沉积的颗粒 从快门移动到快门到清洁位置。

    SELF-CLEANING SHUTTER FOR CVD REACTOR
    7.
    发明申请
    SELF-CLEANING SHUTTER FOR CVD REACTOR 有权
    用于CVD反应器的自清洁快门

    公开(公告)号：US20140190405A1

    公开(公告)日：2014-07-10

    申请号：US13736439

    申请日：2013-01-08

    Applicant: VEECO INSTRUMENTS INC.

    Inventor： Chenghung Paul Chang ,  Keng Moy ,  Alexander I. Gurary

    IPC: B05C11/00

    CPC classification number: C23C16/4407 ,  C23C16/4409 ,  C23C16/4585

    Abstract: A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor can include a reaction chamber having an interior and an entry port for insertion and removal of substrates, a gas inlet manifold communicating with the interior of the chamber for admitting process gasses to form a deposit on substrates held within the interior, a shutter mounted to the chamber, and one or more cleaning elements mounted within the chamber. The shutter can be movable between (i) a run position in which the cleaning elements are remote from the exhaust channel and (ii) a cleaning position in which the one or more cleaning elements engage with the shutter so that the cleaning elements remove deposited particles from the shutter upon movement of the shutter to the cleaning position.

    Abstract translation: 提供化学气相沉积反应器和晶片处理方法。 反应器可以包括具有内部和用于插入和移除基板的入口的反应室，与室的内部连通的气体入口歧管，用于允许工艺气体以在保持在内部的基板上形成沉积物，快门安装 并且安装在腔室内的一个或多个清洁元件。 快门可以在（i）清洁元件远离排气通道的行进位置和（ii）清洁位置之间移动，其中一个或多个清洁元件与快门接合，使得清洁元件去除沉积的颗粒 从快门移动到快门到清洁位置。

    CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS
    8.
    发明申请
    CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS 有权
    化学气相沉积流入元件和方法

    公开(公告)号：US20140116330A1

    公开(公告)日：2014-05-01

    申请号：US14150091

    申请日：2014-01-08

    Applicant: VEECO INSTRUMENTS INC.

    Inventor： Mikhail Belousov ,  Bojan Mitrovic ,  Keng Moy

    IPC: C30B25/14

    CPC classification number: C30B25/14 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4584

    Abstract: A flow inlet element for a chemical vapor deposition reactor is formed from a plurality of elongated tubular elements extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane extending through the axis.

    Abstract translation: 用于化学气相沉积反应器的流入口元件由在与反应器的上游到下游方向横切的平面中彼此并排延伸的多个细长管状元件形成。 管状元件具有用于沿下游方向喷射气体的入口。 晶片载体围绕上游到下游轴线旋转。 气体分布元件可以提供相对于延伸穿过轴线的中间平面不对称的气体分布图案。

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