公开(公告)号：US10167571B2

公开(公告)日：2019-01-01

申请号：US13840164

申请日：2013-03-15

申请人： Veeco Instruments, Inc.

发明人： Sandeep Krishnan ,  William E. Quinn ,  Jeffery S. Montgomery ,  Joshua Mangum ,  Lukas Urban

IPC分类号： C30B25/12 ,  B23P19/04 ,  H01L21/687 ,  C23C16/458

摘要： A wafer carrier and methods of making the same for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. A thermally-insulating spacer is situated at least partially in the at least one wafer retention pocket and arranged to maintain a spacing between the peripheral wall surface and the wafer, the spacer being constructed from a material having a thermal conductivity less than a thermal conductivity of the wafer carrier such that the spacer limits heat conduction from portions of the wafer carrier body to the wafer. The wafer carrier further includes a spacer retention feature that engages with the spacer and includes a surface oriented to prevent centrifugal movement of the spacer when subjected to rotation about the central axis.

公开(公告)号：US20140261187A1

公开(公告)日：2014-09-18

申请号：US13840164

申请日：2013-03-15

申请人： Veeco Instruments, Inc.

发明人： Sandeep Krishnan ,  Wiliam E. Quinn ,  Jeffery S. Montgomery ,  Joshua Mangum ,  Lukas Urban ,  Alexander Gurary

IPC分类号： C30B25/12 ,  B23P19/04

CPC分类号： C30B25/12 ,  B23P19/04 ,  C23C16/4584 ,  C23C16/4585 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T29/49826

摘要： A wafer carrier and methods of making the same for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. A thermally-insulating spacer is situated at least partially in the at least one wafer retention pocket and arranged to maintain a spacing between the peripheral wall surface and the wafer, the spacer being constructed from a material having a thermal conductivity less than a thermal conductivity of the wafer carrier such that the spacer limits heat conduction from portions of the wafer carrier body to the wafer. The wafer carrier further includes a spacer retention feature that engages with the spacer and includes a surface oriented to prevent centrifugal movement of the spacer when subjected to rotation about the central axis.

摘要翻译： 一种晶片载体及其制造方法，用于通过化学气相沉积在一个或多个晶片上生长外延层的系统中。 晶片载体包括凹入其体内的晶片保留孔。 隔热隔离物至少部分地位于至少一个晶片保持袋中，并且被布置成保持周壁表面和晶片之间的间隔，该隔离物由导热率小于热导率的材料构成 晶片载体使得间隔物限制从晶片载体的部分到晶片的热传导。 晶片载体还包括间隔件保持部件，其与间隔件接合并且包括定向成防止间隔件围绕中心轴旋转时的离心运动的表面。

公开(公告)号：US10262883B2

公开(公告)日：2019-04-16

申请号：US14991962

申请日：2016-01-10

申请人： Veeco Instruments Inc.

发明人： Joshua Mangum ,  William E. Quinn

IPC分类号： H01L21/687 ,  H01L21/673 ,  H01L21/66 ,  H01L21/02 ,  C23C16/44

摘要： A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier.

公开(公告)号：US20140318453A1

公开(公告)日：2014-10-30

申请号：US14330433

申请日：2014-07-14

申请人： Veeco Instruments Inc.

发明人： Joshua Mangum ,  Eric A. Armour ,  William E. Quinn

IPC分类号： C23C16/511

CPC分类号： C23C16/511 ,  C23C16/303 ,  C23C16/45551 ,  C23C16/483 ,  C30B25/105 ,  C30B29/403 ,  C30B29/406

摘要： Methods of depositing compound semiconductors onto substrates are disclosed, including directing gaseous reactants into a reaction chamber containing the substrates, selectively supplying energy to one of the gaseous reactants in order to impart sufficient energy to activate that reactant but insufficient to decompose the reactant, and then decomposing the reactant at the surface of the substrate in order to react with the other reactants. The preferred energy source is microwave or infrared radiation, and reactors for carrying out these methods are also disclosed.

摘要翻译： 公开了将化合物半导体沉积到基底上的方法，包括将气态反应物导入含有底物的反应室中，选择性地向气体反应物之一供应能量，以赋予足够的能量来活化该反应物但不足以分解反应物，然后 在基材的表面分解反应物以与其它反应物反应。 优选的能量源是微波或红外辐射，还公开了用于实施这些方法的反应器。

公开(公告)号：US20160126123A1

公开(公告)日：2016-05-05

申请号：US14991962

申请日：2016-01-10

申请人： Veeco Instruments Inc.

发明人： Joshua Mangum ,  William E. Quinn

IPC分类号： H01L21/673 ,  C23C16/44

CPC分类号： H01L21/67383 ,  C23C16/44 ,  H01L21/02104 ,  H01L21/67366 ,  H01L21/68735 ,  H01L21/68771 ,  H01L22/12 ,  H01L22/20

摘要： A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier.

公开(公告)号：US09269565B2

公开(公告)日：2016-02-23

申请号：US13920845

申请日：2013-06-18

申请人： Veeco Instruments Inc.

发明人： Joshua Mangum ,  William E. Quinn

IPC分类号： H01L21/66 ,  H01L21/02

CPC分类号： H01L21/67383 ,  C23C16/44 ,  H01L21/02104 ,  H01L21/67366 ,  H01L21/68735 ,  H01L21/68771 ,  H01L22/12 ,  H01L22/20

摘要： A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier.