-
公开(公告)号：US09677944B2
公开(公告)日：2017-06-13
申请号：US14883098
申请日：2015-10-14
发明人： Alexander I. Gurary , Mikhail Belousov , Guray Tas
CPC分类号： G01J5/0007 , G01J5/02 , G01J5/602
摘要： A method of in-situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element within the reactor about a rotational axis. The method desirably further includes, while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position.
-
公开(公告)号：US09200965B2
公开(公告)日：2015-12-01
申请号：US13801357
申请日：2013-03-13
发明人： Alexander I. Gurary , Mikhail Belousov , Guray Tas
CPC分类号： G01J5/0007 , G01J5/02 , G01J5/602
摘要： A method of in-situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element within the reactor about a rotational axis. The method desirably further includes, while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position.
摘要翻译： 对于诸如化学气相沉积反应器的晶片处理反应器的现场温度测量的方法理想地包括加热反应器直到反应器达到晶片处理温度并且使旋转轴线内的晶片支撑元件旋转在反应器内的步骤。 该方法理想地还包括当晶片支撑元件围绕旋转轴线旋转时，使用接收来自晶片支撑元件的第一部分的辐射的第一操作高温计获得第一操作温度测量值，并且使用晶片获得第一晶片温度测量值 温度测量装置，其接收来自至少一个晶片的辐射，所述晶片温度测量装置位于第一位置。
-
公开(公告)号：US20130343426A1
公开(公告)日：2013-12-26
申请号：US13801357
申请日：2013-03-13
发明人： Alexander I. Gurary , Mikhail Belousov , Guray Tas
IPC分类号： G01J5/02
CPC分类号： G01J5/0007 , G01J5/02 , G01J5/602
摘要： A method of in-situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element within the reactor about a rotational axis. The method desirably further includes, while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position.
摘要翻译： 对于诸如化学气相沉积反应器的晶片处理反应器的现场温度测量的方法理想地包括加热反应器直到反应器达到晶片处理温度并且使旋转轴线内的晶片支撑元件旋转在反应器内的步骤。 该方法理想地还包括当晶片支撑元件围绕旋转轴线旋转时，使用接收来自晶片支撑元件的第一部分的辐射的第一操作高温计获得第一操作温度测量值，并且使用晶片获得第一晶片温度测量值 温度测量装置，其接收来自至少一个晶片的辐射，所述晶片温度测量装置位于第一位置。
-
公开(公告)号：US20160041037A1
公开(公告)日：2016-02-11
申请号：US14883098
申请日：2015-10-14
发明人： Alexander I. Gurary , Mikhail Belousov , Guray Tas
IPC分类号： G01J5/00
CPC分类号： G01J5/0007 , G01J5/02 , G01J5/602
摘要： A method of in-situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element within the reactor about a rotational axis. The method desirably further includes, while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position.
-
-
-
搜索结果
4 条记录 (耗时 0.01 秒)
