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    Temperature control for GaN based materials
    1.
    发明授权
    Temperature control for GaN based materials 有权
    GaN基材料的温度控制

    公开(公告)号：US09200965B2

    公开(公告)日：2015-12-01

    申请号：US13801357

    申请日：2013-03-13

    Applicant: Veeco Instruments Inc.

    Inventor： Alexander I. Gurary ,  Mikhail Belousov ,  Guray Tas

    IPC: G01J5/02 ,  G01J5/00 ,  G01J5/60

    CPC classification number: G01J5/0007 ,  G01J5/02 ,  G01J5/602

    Abstract: A method of in-situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element within the reactor about a rotational axis. The method desirably further includes, while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position.

    Abstract translation: 对于诸如化学气相沉积反应器的晶片处理反应器的现场温度测量的方法理想地包括加热反应器直到反应器达到晶片处理温度并且使旋转轴线内的晶片支撑元件旋转在反应器内的步骤。 该方法理想地还包括当晶片支撑元件围绕旋转轴线旋转时，使用接收来自晶片支撑元件的第一部分的辐射的第一操作高温计获得第一操作温度测量值，并且使用晶片获得第一晶片温度测量值 温度测量装置，其接收来自至少一个晶片的辐射，所述晶片温度测量装置位于第一位置。

    Temperature control for GaN based materials
    3.
    发明授权
    Temperature control for GaN based materials 有权

    公开(公告)号：US09677944B2

    公开(公告)日：2017-06-13

    申请号：US14883098

    申请日：2015-10-14

    Applicant: Veeco Instruments Inc.

    Inventor： Alexander I. Gurary ,  Mikhail Belousov ,  Guray Tas

    IPC: G01J5/00 ,  G01J5/02 ,  G01J5/60

    CPC classification number: G01J5/0007 ,  G01J5/02 ,  G01J5/602

    Abstract: A method of in-situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element within the reactor about a rotational axis. The method desirably further includes, while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position.

    CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS
    4.
    发明申请
    CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS 有权
    化学气相沉积流入元件和方法

    公开(公告)号：US20140116330A1

    公开(公告)日：2014-05-01

    申请号：US14150091

    申请日：2014-01-08

    Applicant: VEECO INSTRUMENTS INC.

    Inventor： Mikhail Belousov ,  Bojan Mitrovic ,  Keng Moy

    IPC: C30B25/14

    CPC classification number: C30B25/14 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4584

    Abstract: A flow inlet element for a chemical vapor deposition reactor is formed from a plurality of elongated tubular elements extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane extending through the axis.

    Abstract translation: 用于化学气相沉积反应器的流入口元件由在与反应器的上游到下游方向横切的平面中彼此并排延伸的多个细长管状元件形成。 管状元件具有用于沿下游方向喷射气体的入口。 晶片载体围绕上游到下游轴线旋转。 气体分布元件可以提供相对于延伸穿过轴线的中间平面不对称的气体分布图案。

    TEMPERATURE CONTROL FOR GaN BASED MATERIALS
    5.
    发明申请
    TEMPERATURE CONTROL FOR GaN BASED MATERIALS 有权

    公开(公告)号：US20160041037A1

    公开(公告)日：2016-02-11

    申请号：US14883098

    申请日：2015-10-14

    Applicant: Veeco Instruments Inc.

    Inventor： Alexander I. Gurary ,  Mikhail Belousov ,  Guray Tas

    IPC: G01J5/00

    CPC classification number: G01J5/0007 ,  G01J5/02 ,  G01J5/602

    Abstract: A method of in-situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element within the reactor about a rotational axis. The method desirably further includes, while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position.

    CHEMICAL VAPOR DEPOSITION WITH ELEVATED TEMPERATURE GAS INJECTION
    6.
    发明申请
    CHEMICAL VAPOR DEPOSITION WITH ELEVATED TEMPERATURE GAS INJECTION 有权
    化学蒸气沉积与高温气体注入

    公开(公告)号：US20150056790A1

    公开(公告)日：2015-02-26

    申请号：US14533650

    申请日：2014-11-05

    Applicant: Veeco Instruments Inc.

    Inventor： Alexander I. Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

    IPC: H01L21/02

    CPC classification number: H01L21/02538 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/0262

    Abstract: A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber (10) of a rotating-disc reactor and directed downwardly onto a wafer carrier (32) and substrates (40) which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-350° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

    Abstract translation: 化学气相沉积反应器及方法。 将反应性气体，例如包括III族金属源和V族金属源的气体引入旋转盘式反应器的室（10）中并且向下引导到晶片载体（32）和基板（40） 保持在升高的基板温度，通常高于约400℃，通常为约700-1100℃，以沉积诸如III-V族半导体的化合物。 气体在理想的高于约75℃的入口温度下引入反应器中，最优选的是约100℃-350℃。反应器的壁可以处于接近入口温度的温度。 使用升高的入口温度允许使用较低的晶片载体的旋转速率，更高的操作压力，更低的流速或这些的一些组合。

    TEMPERATURE CONTROL FOR GaN BASED MATERIALS
    7.
    发明申请
    TEMPERATURE CONTROL FOR GaN BASED MATERIALS 有权
    基于GaN的材料的温度控制

    公开(公告)号：US20130343426A1

    公开(公告)日：2013-12-26

    申请号：US13801357

    申请日：2013-03-13

    Applicant: VEECO INSTRUMENTS INC.

    Inventor： Alexander I. Gurary ,  Mikhail Belousov ,  Guray Tas

    IPC: G01J5/02

    CPC classification number: G01J5/0007 ,  G01J5/02 ,  G01J5/602

    Abstract: A method of in-situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element within the reactor about a rotational axis. The method desirably further includes, while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position.

    Abstract translation: 对于诸如化学气相沉积反应器的晶片处理反应器的现场温度测量的方法理想地包括加热反应器直到反应器达到晶片处理温度并且使旋转轴线内的晶片支撑元件旋转在反应器内的步骤。 该方法理想地还包括当晶片支撑元件围绕旋转轴线旋转时，使用接收来自晶片支撑元件的第一部分的辐射的第一操作高温计获得第一操作温度测量值，并且使用晶片获得第一晶片温度测量值 温度测量装置，其接收来自至少一个晶片的辐射，所述晶片温度测量装置位于第一位置。

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