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1.发明申请公开(公告)号：US20200248307A1
公开(公告)日：2020-08-06
申请号：US16752661
申请日：2020-01-26
IPC分类号： C23C16/458 , H01L21/687
摘要： A substrate carrier that supports a semiconductor substrate in a chemical vapor deposition system that includes a support having a beveled inner top surface including a top surface and a bottom surface. The top surface has a recessed area for receiving at least one substrate for chemical vapor deposition processing. The bottom surface has a beveled edge that forms a conical interface with the beveled inner top surface of the support at a self-locking angle that prevents substrate carrier movement in a vertical direction at a predetermined temperature equal to a maximum operation temperature. A coefficient of thermal expansion of a material forming the substrate carrier is substantially the same as a coefficient of thermal expansion of a material forming the support.
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公开(公告)号：US10718052B2
公开(公告)日：2020-07-21
申请号：US15382216
申请日：2016-12-16
发明人： Louise S. Barriss , Richard A. Comunale , Roger P. Fremgen , Alexander I. Gurary , Todd A. Luse , Robert White Milgate , John D. Pollock
IPC分类号： C23C16/458 , H01L21/687 , C30B25/12 , C23C16/46 , C30B25/08 , C30B25/10 , C23C16/52
摘要： A rotating disk reactor for chemical vapor deposition includes a vacuum chamber and a ferrofluid feedthrough comprising an upper and a lower ferrofluid seal that passes a motor shaft into the vacuum chamber. A motor is coupled to the motor shaft and is positioned in an atmospheric region between the upper and the lower ferrofluid seal. A turntable is positioned in the vacuum chamber and is coupled to the motor shaft so that the motor rotates the turntable at a desired rotation rate. A dielectric support is coupled to the turntable so that the turntable rotates the dielectric support when driven by the shaft. A substrate carrier is positioned on the dielectric support in the vacuum chamber for chemical vapor deposition processing. A heater is positioned proximate to the substrate carrier that controls the temperature of the substrate carrier to a desired temperature for chemical vapor deposition.
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公开(公告)号：US10438795B2
公开(公告)日：2019-10-08
申请号：US15178723
申请日：2016-06-10
IPC分类号： C23C16/46 , H01L21/02 , H01L21/67 , H01L21/687 , C23C16/458 , C23C16/455 , H01L21/285
摘要： A self-centering wafer carrier system for a chemical vapor deposition (CVD) reactor includes a wafer carrier comprising an edge. The wafer carrier at least partially supports a wafer for CVD processing. A rotating tube comprises an edge that supports the wafer carrier during processing. An edge geometry of the wafer carrier and an edge geometry of the rotating tube being chosen to provide a coincident alignment of a central axis of the wafer carrier and a rotation axis of the rotating tube during process at a desired process temperature.
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公开(公告)号：US09982362B2
公开(公告)日：2018-05-29
申请号：US14618519
申请日：2015-02-10
IPC分类号： C23C16/455 , C30B25/14 , C23C16/458 , C30B25/16 , C30B25/08 , C30B25/12 , C23C16/52
CPC分类号： C30B25/14 , C23C16/455 , C23C16/45563 , C23C16/45565 , C23C16/45574 , C23C16/45578 , C23C16/458 , C23C16/4584 , C23C16/52 , C30B25/08 , C30B25/12 , C30B25/165
摘要： In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.
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公开(公告)号：US09677944B2
公开(公告)日：2017-06-13
申请号：US14883098
申请日：2015-10-14
发明人： Alexander I. Gurary , Mikhail Belousov , Guray Tas
CPC分类号： G01J5/0007 , G01J5/02 , G01J5/602
摘要： A method of in-situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element within the reactor about a rotational axis. The method desirably further includes, while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position.
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公开(公告)号：USD810705S1
公开(公告)日：2018-02-20
申请号：US29559977
申请日：2016-04-01
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公开(公告)号：US20160372321A1
公开(公告)日：2016-12-22
申请号：US15178723
申请日：2016-06-10
IPC分类号： H01L21/02 , H01L21/67 , H01L21/687
CPC分类号： H01L21/0262 , C23C16/455 , C23C16/4584 , C23C16/4585 , C23C16/46 , H01L21/02271 , H01L21/28556 , H01L21/67098 , H01L21/67103 , H01L21/67109 , H01L21/68735 , H01L21/68757 , H01L21/68785 , H01L21/68792
摘要： A self-centering wafer carrier system for a chemical vapor deposition (CVD) reactor includes a wafer carrier comprising an edge. The wafer carrier at least partially supports a wafer for CVD processing. A rotating tube comprises an edge that supports the wafer carrier during processing. An edge geometry of the wafer carrier and an edge geometry of the rotating tube being chosen to provide a coincident alignment of a central axis of the wafer carrier and a rotation axis of the rotating tube during process at a desired process temperature.
摘要翻译： 用于化学气相沉积（CVD）反应器的自定心晶片载体系统包括具有边缘的晶片载体。 晶片载体至少部分地支撑用于CVD处理的晶片。 旋转管包括在处理期间支撑晶片载体的边缘。 晶片载体的边缘几何形状和旋转管的边缘几何形状被选择为在期望的工艺温度下处理期间提供晶片载体的中心轴线和旋转管的旋转轴线的重合对准。
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公开(公告)号：US09273413B2
公开(公告)日：2016-03-01
申请号：US13827495
申请日：2013-03-14
发明人： Sandeep Krishnan , Alexander I. Gurary , Keng Moy
IPC分类号： C30B25/12 , C30B25/10 , C23C16/458 , C30B29/40
CPC分类号： C30B25/12 , C23C16/458 , C23C16/4586 , C30B25/10 , C30B29/40 , Y10T137/0318
摘要： Wafer carrier arranged to hold a plurality wafers and to inject a fill gas into gaps between the wafers and the wafer carrier for enhanced heat transfer and to promote uniform temperature of the wafers. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers. In various embodiments, the wafer carrier utilizes at least one plenum structure contained within the wafer carrier to source a plurality of weep holes for passing a fill gas into the wafer retention pockets of the wafer carrier. The plenum(s) promote the uniformity of the flow, thus providing efficient heat transfer and enhanced uniformity of wafer temperatures.
摘要翻译： 晶片载体布置成保持多个晶片并且将填充气体注入到晶片和晶片载体之间的间隙中，以增强热传递并促进晶片的均匀温度。 该装置被布置成改变填充气体的组成，流速或两者，以便抵消晶片的不期望的温度不均匀图案。 在各种实施例中，晶片载体利用包含在晶片载体内的至少一个增压室结构来源出多个用于使填充气体进入晶片载体的晶片保持腔的漏孔。 增压室促进流动的均匀性，从而提供有效的热传递和提高晶圆温度的均匀性。
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公开(公告)号：US09200965B2
公开(公告)日：2015-12-01
申请号：US13801357
申请日：2013-03-13
发明人： Alexander I. Gurary , Mikhail Belousov , Guray Tas
CPC分类号： G01J5/0007 , G01J5/02 , G01J5/602
摘要： A method of in-situ temperature measurement for a wafer treatment reactor such as a chemical vapor deposition reactor desirably includes the steps of heating the reactor until the reactor reaches a wafer treatment temperature and rotating a wafer support element within the reactor about a rotational axis. The method desirably further includes, while the wafer support element is rotating about the rotational axis, obtaining first operating temperature measurements using a first operating pyrometer that receives radiation from a first portion of the wafer support element, and obtaining first wafer temperature measurements using a wafer temperature measurement device that receives radiation from at least one wafer, the wafer temperature measurement device located at a first position.
摘要翻译： 对于诸如化学气相沉积反应器的晶片处理反应器的现场温度测量的方法理想地包括加热反应器直到反应器达到晶片处理温度并且使旋转轴线内的晶片支撑元件旋转在反应器内的步骤。 该方法理想地还包括当晶片支撑元件围绕旋转轴线旋转时，使用接收来自晶片支撑元件的第一部分的辐射的第一操作高温计获得第一操作温度测量值，并且使用晶片获得第一晶片温度测量值 温度测量装置，其接收来自至少一个晶片的辐射，所述晶片温度测量装置位于第一位置。
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公开(公告)号：US09053935B2
公开(公告)日：2015-06-09
申请号：US14533650
申请日：2014-11-05
IPC分类号： H01L21/20 , H01L21/36 , H01L21/00 , H01L21/26 , H01L21/42 , H01L21/302 , H01L21/461 , H01L21/31 , H01L21/469 , H01L21/02 , H01L21/205
CPC分类号： H01L21/02538 , C23C16/301 , C23C16/45504 , C23C16/4557 , C23C16/45574 , C23C16/45578 , C23C16/45587 , C23C16/458 , C23C16/4584 , C23C16/46 , H01L21/0262
摘要： A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber (10) of a rotating-disc reactor and directed downwardly onto a wafer carrier (32) and substrates (40) which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-350° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.
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