Method and apparatus for ion formation in an ion implanter
    1.
    发明授权
    Method and apparatus for ion formation in an ion implanter 失效
    离子注入机离子形成的方法和装置

    公开(公告)号:US5661308A

    公开(公告)日:1997-08-26

    申请号:US655448

    申请日:1996-05-30

    CPC分类号: H01J27/024 H01J27/16

    摘要: An ion source for use in an ion implanter. The ion source includes a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. A supply of ionizable material routes the material into the gas confinement chamber. An antenna that is supported by the base has a metallic radio frequency conducting segment mounted directly within the gas confinement chamber to deliver ionizing energy into the gas ionization zone.

    摘要翻译: 用于离子注入机的离子源。 离子源包括气体限制室,其具有结合气体电离区的导电室壁。 气体限制室包括允许离子离开室的出口。 基座相对于从离开气体限制室的离子形成离子束的结构定位气体限制室。 可电离材料的供应将材料引导进入气体限制室。 由基座支撑的天线具有直接安装在气体限制室内的金属射频传导段,以将电离能传递到气体电离区。