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    Method of manufacturing a semiconductor device and semiconductor device obtained by means of such a method
    1.
    发明申请
    Method of manufacturing a semiconductor device and semiconductor device obtained by means of such a method 有权

    公开(公告)号：US20060128089A1

    公开(公告)日：2006-06-15

    申请号：US10539280

    申请日：2003-12-15

    申请人： Viet Nguyen Hoang ,  Dirk Gravesteijn ,  Romano Julma Hoofman

    发明人： Viet Nguyen Hoang ,  Dirk Gravesteijn ,  Romano Julma Hoofman

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/76828 ,  H01L21/76807 ,  H01L2221/1026

    摘要： The invention relates to the manufacture of a semiconductor device (10) with a semiconductor body (1) and a substrate (2) and comprising at least one semiconductor element (3), which semiconductor device is equipped with at least one connection region (4) and a superjacent strip-shaped connection conductor (5) which is connected to the connection region, which connection region and connection conductor are both recessed in a dielectric, and a dielectric region (6) of a first material is provided on the semiconductor body (1) at the location of the connection region (4) to be formed, after which the dielectric region (6) is coated with a dielectric layer (7) of a second material that differs from the first material, which dielectric layer is provided, at the location of the strip-shaped connection conductor (5) to be formed, with a strip-shaped recess (7A) which overlaps the dielectric region (6) and extends up to said dielectric region, and after the formation of the recess (7A) and the removal of the dielectric region (6), the connection region (4) is formed by depositing an electroconductive material in the space (6A) created by the removal of the dielectric region (6), and the connection conductor (5) is formed by depositing an electroconductive material in the recess (7A). According to the invention, for the first material use is made of an organic material, and for the second material use is made of a material having a higher decomposition temperature than the organic material, and the dielectric region (6) is removed by heating it at a temperature above the decomposition temperature of the organic material yet below the decomposition temperature of the second material. A method according to the invention is very simple and, due to an optimal choice for the second material, may result in a high planarity of the device (10) obtained. For the dielectric region (4), use is preferably made of a photoresist, and for the dielectric layer (7), use is preferably made of a liquid material such as a SILK or SOG material which is converted to the solid state by heating.

    RESONATOR
    2.
    发明申请
    RESONATOR 审中-公开
    谐振器

    公开(公告)号：US20100090302A1

    公开(公告)日：2010-04-15

    申请号：US12444684

    申请日：2007-10-05

    申请人： Viet Nguyen Hoang ,  Dirk Gravesteijn ,  Radu Surdeanu

    发明人： Viet Nguyen Hoang ,  Dirk Gravesteijn ,  Radu Surdeanu

    IPC分类号： H01L23/28 ,  H01L21/336 ,  H01L21/31

    CPC分类号： H03H9/2405 ,  H03H3/0072 ,  H03H2009/02496

    摘要： A method of making a resonator, preferably a nano-resonator, includes starting with a FINFET structure with a central bar, first and second electrodes connected to the central bar, and third and fourth electrodes on either side of the central bar and separated from the central bar by gate dielectric. The structure is formed on a buried oxide layer. The gate dielectric and buried oxide layer are then selectively etched away to provide a nano-resonator structure with a resonator element 30, a pair of resonator electrodes (32,34), a control electrode (36) and a sensing electrode (38).

    摘要翻译： 一种制造谐振器，优选纳米谐振器的方法包括以中心棒，连接到中心棒的第一和第二电极以及中心棒的任一侧上的第三和第四电极的FINFET结构开始并与 中央棒由栅极电介质。 该结构形成在掩埋氧化物层上。 然后选择性地蚀刻栅极电介质和掩埋氧化物层以提供具有谐振元件30，一对谐振器电极（32,34），控制电极（36）和感测电极（38）的纳米谐振器结构。