公开(公告)号：US20050252454A1

公开(公告)日：2005-11-17

申请号：US11065702

申请日：2005-02-23

申请人： Vijay Parkhe ,  Matthew Leopold ,  Timothy Ronan ,  Todd Martin ,  Edward Ng ,  Nitin Khurana ,  Song-Moon Suh ,  Richard Fay ,  Christopher Hagerty ,  Michael Rice ,  Darryl Angelo ,  Kurt Ahman ,  Matthew Tsai ,  Steve Sansoni

发明人： Vijay Parkhe ,  Matthew Leopold ,  Timothy Ronan ,  Todd Martin ,  Edward Ng ,  Nitin Khurana ,  Song-Moon Suh ,  Richard Fay ,  Christopher Hagerty ,  Michael Rice ,  Darryl Angelo ,  Kurt Ahman ,  Matthew Tsai ,  Steve Sansoni

IPC分类号： H01L21/683 ,  H01L21/687 ,  C23C16/00

CPC分类号： C23C16/463 ,  H01L21/6831 ,  H01L21/6875 ,  H01L21/68757 ,  Y10T279/23

摘要： A lifting assembly can lift a substrate from a substrate support and transport the substrate. The lift assembly has a hoop sized to fit about a periphery of the substrate support, and a pair of arcuate fins mounted on the hoop, each arcuate fin comprising a pair of opposing ends having ledges that extend radially inward, each ledge having a raised protrusion to lift a substrate so that the substrate contacts substantially only the raised protrusion, thereby minimizing contact with the ledge, when the pair of fins is used to lift the substrate off the substrate support. The lifting assembly and other process chamber components can have a diamond-like coating having interlinked networks of (i) carbon and hydrogen, and (ii) silicon and oxygen. The diamond-like coating has a contact surface having a coefficient of friction of less than about 0.3, a hardness of at least about 8 GPa, and a metal concentration level of less than about 5×1012 atoms/cm2 of metal. The contact surface reduces contamination of a substrate when directly or indirectly contacting a substrate.

摘要翻译： 提升组件可以从衬底支撑件提起衬底并输送衬底。 提升组件具有适合围绕基板支撑件的周边的环形尺寸，以及安装在环上的一对弓形翅片，每个弓形翅片包括一对相对的端部，其具有径向向内延伸的凸缘，每个凸缘具有凸起突起 以提升衬底，使得衬底基本上仅接触凸起突起，从而当使用一对翅片将衬底从衬底支撑件提起时，使与凸缘的接触最小化。 提升组件和其它处理室组件可以具有类似金刚石的涂层，其具有（i）碳和氢的互连网络，和（ii）硅和氧。 类金刚石涂层具有摩擦系数小于约0.3，硬度至少约8GPa，金属浓度小于约5×10 12原子/ cm的接触表面 金属的<2> 2。 当直接或间接接触基底时，接触表面减少了基底的污染。

公开(公告)号：US06235163B1

公开(公告)日：2001-05-22

申请号：US09350556

申请日：1999-07-09

申请人： Darryl Angelo ,  Arvind Sundarrajan ,  Peijun Ding ,  James H. Tsung ,  Ilyoung R. Hong ,  Barry Chin

发明人： Darryl Angelo ,  Arvind Sundarrajan ,  Peijun Ding ,  James H. Tsung ,  Ilyoung R. Hong ,  Barry Chin

IPC分类号： C23C1434

CPC分类号： H01J37/321 ,  H01J37/32724 ,  H01J37/34

摘要： An improved system for performing plasma enhanced PVD of copper, aluminum, tungsten or other metallic material is disclosed. The system has markedly improved performance in the critical area of unwanted in-film particle deposits. The improved performance is provided by lowering the operating temperature of the RF coil used in the plasma enhanced PVD system and by carefully smoothing the outer surface of the RF coil. High conductivity material in the coil supports, increased contact area between the coil supports and the RF coil, and the use of active cooling of the coil further enhance the performance of the system.

摘要翻译： 公开了一种用于执行铜，铝，钨或其它金属材料的等离子体增强PVD的改进的系统。 该系统在不需要的膜内颗粒沉积的关键区域显着改善了性能。 通过降低等离子体增强PVD系统中使用的RF线圈的工作温度以及仔细地平滑RF线圈的外表面来提供改进的性能。 线圈支架中的高导电性材料，线圈支架与RF线圈之间的接触面积增加，线圈主动冷却的使用进一步增强了系统的性能。

公开(公告)号：US06607640B2

公开(公告)日：2003-08-19

申请号：US09538343

申请日：2000-03-29

申请人： Arvind Sundarrajan ,  Darryl Angelo ,  Tse-Yong Yao ,  Peijun Ding

发明人： Arvind Sundarrajan ,  Darryl Angelo ,  Tse-Yong Yao ,  Peijun Ding

IPC分类号： C23C1434

CPC分类号： C23C14/541

摘要： A method of improving the temperature control of a clamped substrate mounted on a substrate support that is biased, the substrate support having a passage therethrough to permit a flow of backside gas for heating or cooling the substrate, whereby the pressure of the backside gas is maintained at at least 15 torr. A high gas pressure improves the thickness uniformity of processing across the substrate. For plasma deposition of sputtered seed layers, the morphology of the seed layer is improved near the edge of the substrate and the uniformity of the layer across the substrate is also improved.

摘要翻译： 一种改进安装在被偏压的衬底支撑件上的夹持衬底的温度控制的方法，衬底支撑件具有穿过其中的通道，以允许背面气体流动以加热或冷却衬底，从而维持背侧气体的压力 至少15托。 高气体压力提高了跨衬底的加工厚度均匀性。 对于溅射种子层的等离子体沉积，种子层的形态在衬底的边缘附近得到改善，并且跨衬底的层的均匀性也得到改善。

公开(公告)号：US06458251B1

公开(公告)日：2002-10-01

申请号：US09440679

申请日：1999-11-16

申请人： Arvind Sundarrajan ,  Darryl Angelo ,  Peijun Ding ,  Barry Chin ,  Imran Hasim

发明人： Arvind Sundarrajan ,  Darryl Angelo ,  Peijun Ding ,  Barry Chin ,  Imran Hasim

IPC分类号： C23C1432

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/3492 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/3402 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76873 ,  H01L21/76877

摘要： A multi-step process for the deposition of a material into high aspect ratio features on a substrate surface is provided. The process involves depositing a material on the substrate at a first pressure for a first period of time and then depositing the material on the substrate at a second pressure for a second period of time. Modulation of the pressure influences the ionization and trajectory of the particles, which are ionized in a plasma environment. The method of the invention in one aspect allows for optimum deposition at the bottom of a high aspect ratio feature during a high pressure step and increased deposition on the sidewalls of the feature during at least a low pressure step.

摘要翻译： 提供了用于将材料沉积到衬底表面上的高纵横比特征的多步骤过程。 该方法包括在第一压力下在第一时间段内将材料沉积在衬底上，然后在第二压力下将材料沉积在衬底上持续第二段时间。 压力的调制影响在等离子体环境中离子化的颗粒的电离和轨迹。 在一个方面，本发明的方法允许在高压步骤期间在高纵横比特征的底部进行最佳沉积，并且在至少低压步骤期间在特征的侧壁上增加沉积。