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公开(公告)号：US08120119B2
公开(公告)日：2012-02-21
申请号：US13028097
申请日：2011-02-15
IPC分类号： H01L29/768
CPC分类号： H01L21/823807 , H01L21/28518 , H01L21/2855 , H01L21/76843 , H01L21/76895 , H01L21/823814 , H01L21/823871 , H01L23/485 , H01L23/53238 , H01L29/165 , H01L29/665 , H01L29/66628 , H01L29/66636 , H01L29/7833 , H01L29/7843 , H01L29/7845 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a slot contact structure for transistor performance enhancement. A contact opening is formed to expose a contact region, and a slot contact is disposed within the contact opening in order to induce a stress on an adjacent channel region. In an embodiment, a stress inducing barrier plug is disposed within a portion of the contact opening and the remainder of the contact opening is filled with a lower resistivity contact metal. By selecting the proper materials and deposition parameters, the slot contact can be tuned to induce a tensile or compressive stress on the adjacent channel region, thus being applicable for both p-type and n-type devices.
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2.发明授权Stressed barrier plug slot contact structure for transistor performance enhancement 有权用于晶体管性能提升的阻塞插塞槽接触结构公开(公告)号：US07968952B2
公开(公告)日：2011-06-28
申请号：US11648098
申请日：2006-12-29
IPC分类号： H01L29/78
CPC分类号： H01L21/823807 , H01L21/28518 , H01L21/2855 , H01L21/76843 , H01L21/76895 , H01L21/823814 , H01L21/823871 , H01L23/485 , H01L23/53238 , H01L29/165 , H01L29/665 , H01L29/66628 , H01L29/66636 , H01L29/7833 , H01L29/7843 , H01L29/7845 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a slot contact structure for transistor performance enhancement. A contact opening is formed to expose a contact region, and a slot contact is disposed within the contact opening in order to induce a stress on an adjacent channel region. In an embodiment, a stress inducing barrier plug is disposed within a portion of the contact opening and the remainder of the contact opening is filled with a lower resistivity contact metal. By selecting the proper materials and deposition parameters, the slot contact can be tuned to induce a tensile or compressive stress on the adjacent channel region, thus being applicable for both p-type and n-type devices.
摘要翻译： 一种用于形成用于晶体管性能增强的槽接触结构的方法。 形成接触开口以暴露接触区域，并且在接触开口内设置槽接触件，以便在相邻通道区域上引起应力。 在一个实施例中，应力诱导阻挡塞设置在接触开口的一部分内，并且接触开口的其余部分填充有较低电阻率的接触金属。 通过选择适当的材料和沉积参数，可以调整槽接触以在相邻通道区域上引起拉伸或压缩应力，从而适用于p型和n型器件。
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3.发明授权Stressed barrier plug slot contact structure for transistor performance enhancement 有权用于晶体管性能提升的阻塞插塞槽接触结构公开(公告)号：US08278718B2
公开(公告)日：2012-10-02
申请号：US13306607
申请日：2011-11-29
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823807 , H01L21/28518 , H01L21/2855 , H01L21/76843 , H01L21/76895 , H01L21/823814 , H01L21/823871 , H01L23/485 , H01L23/53238 , H01L29/165 , H01L29/665 , H01L29/66628 , H01L29/66636 , H01L29/7833 , H01L29/7843 , H01L29/7845 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a slot contact structure for transistor performance enhancement. A contact opening is formed to expose a contact region, and a slot contact is disposed within the contact opening in order to induce a stress on an adjacent channel region. In an embodiment, a stress inducing barrier plug is disposed within a portion of the contact opening and the remainder of the contact opening is filled with a lower resistivity contact metal. By selecting the proper materials and deposition parameters, the slot contact can be tuned to induce a tensile or compressive stress on the adjacent channel region, thus being applicable for both p-type and n-type devices.
摘要翻译： 一种用于形成用于晶体管性能增强的槽接触结构的方法。 形成接触开口以暴露接触区域，并且在接触开口内设置槽接触件，以便在相邻通道区域上引起应力。 在一个实施例中，应力诱导阻挡塞设置在接触开口的一部分内，并且接触开口的其余部分填充有较低电阻率的接触金属。 通过选择适当的材料和沉积参数，可以调整槽接触以在相邻通道区域上引起拉伸或压缩应力，从而适用于p型和n型器件。
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4.发明申请STRESSED BARRIER PLUG SLOT CONTACT STRUCTURE FOR TRANSISTOR PERFORMANCE ENHANCEMENT 有权用于晶体管性能增强的应力障碍物插槽接头结构公开(公告)号：US20110133259A1
公开(公告)日：2011-06-09
申请号：US13028097
申请日：2011-02-15
IPC分类号： H01L29/76
CPC分类号： H01L21/823807 , H01L21/28518 , H01L21/2855 , H01L21/76843 , H01L21/76895 , H01L21/823814 , H01L21/823871 , H01L23/485 , H01L23/53238 , H01L29/165 , H01L29/665 , H01L29/66628 , H01L29/66636 , H01L29/7833 , H01L29/7843 , H01L29/7845 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a slot contact structure for transistor performance enhancement. A contact opening is formed to expose a contact region, and a slot contact is disposed within the contact opening in order to induce a stress on an adjacent channel region. In an embodiment, a stress inducing barrier plug is disposed within a portion of the contact opening and the remainder of the contact opening is filled with a lower resistivity contact metal. By selecting the proper materials and deposition parameters, the slot contact can be tuned to induce a tensile or compressive stress on the adjacent channel region, thus being applicable for both p-type and n-type devices.
摘要翻译： 一种用于形成用于晶体管性能增强的槽接触结构的方法。 形成接触开口以暴露接触区域，并且在接触开口内设置槽接触件，以便在相邻通道区域上引起应力。 在一个实施例中，应力诱导阻挡塞设置在接触开口的一部分内，并且接触开口的其余部分填充有较低电阻率的接触金属。 通过选择适当的材料和沉积参数，可以调整槽接触以在相邻通道区域上引起拉伸或压缩应力，从而适用于p型和n型器件。
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5.发明授权Tuned tensile stress low resistivity slot contact structure for n-type transistor performance enhancement 有权调谐拉伸应力低电阻率槽接触结构为n型晶体管性能提升公开(公告)号：US07719062B2
公开(公告)日：2010-05-18
申请号：US11647977
申请日：2006-12-29
IPC分类号： H01L23/48
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/2855 , H01L21/76843 , H01L21/76895 , H01L21/823807 , H01L21/823814 , H01L21/823871 , H01L23/485 , H01L23/53238 , H01L29/165 , H01L29/66628 , H01L29/66636 , H01L29/7833 , H01L29/7843 , H01L29/7845 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a slot contact structure for n-type transistor performance enhancement. A slot contact opening is formed to expose a contact region, and a barrier plug is disposed within a portion of the slot contact opening in order to induce a tensile stress on an adjacent channel region. The remainder of the slot contact opening is filled with a lower resistivity contact metal. Barrier plug deposition temperature can be varied in order to tune the tensile stress on the adjacent channel region.
摘要翻译： 一种用于形成用于n型晶体管性能增强的槽接触结构的方法。 形成槽接触开口以暴露接触区域，并且阻挡塞设置在槽接触开口的一部分内，以便在相邻通道区域上引起拉伸应力。 槽接触开口的其余部分填充有较低电阻率的接触金属。 阻挡塞沉积温度可以变化以调节相邻通道区域上的拉伸应力。
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6.发明申请Tuned tensile stress low resistivity slot contact structure for n-type transistor performance enhancement 有权调谐拉伸应力低电阻率槽接触结构为n型晶体管性能提升公开(公告)号：US20080157224A1
公开(公告)日：2008-07-03
申请号：US11647977
申请日：2006-12-29
IPC分类号： H01L29/78 , H01L21/336 , H01L21/8238
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/2855 , H01L21/76843 , H01L21/76895 , H01L21/823807 , H01L21/823814 , H01L21/823871 , H01L23/485 , H01L23/53238 , H01L29/165 , H01L29/66628 , H01L29/66636 , H01L29/7833 , H01L29/7843 , H01L29/7845 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a slot contact structure for n-type transistor performance enhancement. A slot contact opening is formed to expose a contact region, and a barrier plug is disposed within a portion of the slot contact opening in order to induce a tensile stress on an adjacent channel region. The remainder of the slot contact opening is filled with a lower resistivity contact metal. Barrier plug deposition temperature can be varied in order to tune the tensile stress on the adjacent channel region.
摘要翻译： 一种用于形成用于n型晶体管性能增强的槽接触结构的方法。 形成槽接触开口以暴露接触区域，并且阻挡塞设置在槽接触开口的一部分内，以便在相邻通道区域上引起拉伸应力。 槽接触开口的其余部分填充有较低电阻率的接触金属。 可以改变阻挡塞沉积温度以调节相邻通道区域上的拉伸应力。
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公开(公告)号：US20080076246A1
公开(公告)日：2008-03-27
申请号：US11527367
申请日：2006-09-25
IPC分类号： H01L21/44 , H01L21/8234 , H01L21/336 , H01L21/4763
CPC分类号： H01L21/76846 , H01L21/28518 , H01L21/76855 , H01L29/665 , H01L29/78
摘要： Embodiments of the invention include apparatuses and methods relating to through contact-opening silicide and barrier layer formation. In one embodiment, a silicide region is formed in a silicon substrate by deposition of a siliciding material in a contact opening and a subsequent anneal.
摘要翻译： 本发明的实施例包括与开启硅化物和阻挡层形成有关的装置和方法。 在一个实施例中，通过在接触开口中沉积硅化材料和随后的退火在硅衬底中形成硅化物区域。
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8.发明申请STRESSED BARRIER PLUG SLOT CONTACT STRUCTURE FOR TRANSISTOR PERFORMANCE ENHANCEMENT 有权用于晶体管性能增强的应力障碍物插槽接头结构公开(公告)号：US20120068273A1
公开(公告)日：2012-03-22
申请号：US13306607
申请日：2011-11-29
IPC分类号： H01L27/092
CPC分类号： H01L21/823807 , H01L21/28518 , H01L21/2855 , H01L21/76843 , H01L21/76895 , H01L21/823814 , H01L21/823871 , H01L23/485 , H01L23/53238 , H01L29/165 , H01L29/665 , H01L29/66628 , H01L29/66636 , H01L29/7833 , H01L29/7843 , H01L29/7845 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a slot contact structure for transistor performance enhancement. A contact opening is formed to expose a contact region, and a slot contact is disposed within the contact opening in order to induce a stress on an adjacent channel region. In an embodiment, a stress inducing barrier plug is disposed within a portion of the contact opening and the remainder of the contact opening is filled with a lower resistivity contact metal. By selecting the proper materials and deposition parameters, the slot contact can be tuned to induce a tensile or compressive stress on the adjacent channel region, thus being applicable for both p-type and n-type devices.
摘要翻译： 一种用于形成用于晶体管性能增强的槽接触结构的方法。 形成接触开口以暴露接触区域，并且在接触开口内设置槽接触件，以便在相邻通道区域上引起应力。 在一个实施例中，应力诱导阻挡塞设置在接触开口的一部分内，并且接触开口的其余部分填充有较低电阻率的接触金属。 通过选择适当的材料和沉积参数，可以调整槽接触以在相邻通道区域上引起拉伸或压缩应力，从而适用于p型和n型器件。
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公开(公告)号：US07582558B2
公开(公告)日：2009-09-01
申请号：US11486871
申请日：2006-07-14
IPC分类号： H01L21/00
CPC分类号： H01L21/7684 , H01L21/02074 , H01L21/32115 , H01L21/3212 , H01L21/32136
摘要： Copper interconnects may be made using the damascene process with reduced copper corrosion. Copper corrosion may be reduced by planarizing through excess copper down to, but not completely through, a copper diffusion barrier layer. The copper diffusion barrier layer may be removed using a different technique. Thereafter, suitable chemicals may be utilized to clean the structure.
摘要翻译： 铜互连可以使用具有减少的铜腐蚀的镶嵌工艺来制造。 通过使铜过度扩散到铜扩散阻挡层而不是完全通过多余的铜进行平坦化，可以减少铜腐蚀。 可以使用不同的技术去除铜扩散阻挡层。 此后，可以使用合适的化学品来清洁结构。
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10.发明申请Stressed barrier plug slot contact structure for transistor performance enhancement 有权用于晶体管性能提升的阻塞插塞槽接触结构公开(公告)号：US20080157208A1
公开(公告)日：2008-07-03
申请号：US11648098
申请日：2006-12-29
IPC分类号： H01L29/768 , H01L21/336
CPC分类号： H01L21/823807 , H01L21/28518 , H01L21/2855 , H01L21/76843 , H01L21/76895 , H01L21/823814 , H01L21/823871 , H01L23/485 , H01L23/53238 , H01L29/165 , H01L29/665 , H01L29/66628 , H01L29/66636 , H01L29/7833 , H01L29/7843 , H01L29/7845 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a slot contact structure for transistor performance enhancement. A contact opening is formed to expose a contact region, and a slot contact is disposed within the contact opening in order to induce a stress on an adjacent channel region. In an embodiment, a stress inducing barrier plug is disposed within a portion of the contact opening and the remainder of the contact opening is filled with a lower resistivity contact metal. By selecting the proper materials and deposition parameters, the slot contact can be tuned to induce a tensile or compressive stress on the adjacent channel region, thus being applicable for both p-type and n-type devices.
摘要翻译： 一种用于形成用于晶体管性能增强的槽接触结构的方法。 形成接触开口以暴露接触区域，并且在接触开口内设置槽接触件，以便在相邻通道区域上引起应力。 在一个实施例中，应力诱导阻挡塞设置在接触开口的一部分内，并且接触开口的其余部分填充有较低电阻率的接触金属。 通过选择适当的材料和沉积参数，可以调整槽接触以在相邻通道区域上引起拉伸或压缩应力，从而适用于p型和n型器件。
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