公开(公告)号：US20130210213A1

公开(公告)日：2013-08-15

申请号：US13372515

申请日：2012-02-14

申请人： Vinay Nair ,  David Pratt ,  Christopher Hawk ,  Richard Housley

发明人： Vinay Nair ,  David Pratt ,  Christopher Hawk ,  Richard Housley

IPC分类号： H01L21/311

CPC分类号： G03F7/70633

摘要： A method for forming a self-aligned overlay mark is disclosed. First, a first region, a second region and a main feature which is disposed between the first region and the second region all disposed on the substrate are provided. The first region defines a first edge and the second region defines a second edge. Second, a cut mask layer is formed to respectively cover the first region and the second region to expose the main feature. Next, the cut mask layer is determined if it is self-aligned with the second edge or the first edge, and creates a self-aligned overlay mark. Later, a main feature etching step is carried out to transfer the main feature into the substrate when the cut mask layer is determined to be self-aligned with the second edge or the first edge.

摘要翻译： 公开了一种形成自对准覆盖标记的方法。 首先，设置设置在基板上的第一区域和第二区域之间的第一区域，第二区域和主要特征。 第一区域限定第一边缘，第二区域限定第二边缘。 第二，形成切割掩模层以分别覆盖第一区域和第二区域以暴露主要特征。 接下来，确定切割掩模层是否与第二边缘或第一边缘自对准，并且产生自对准覆盖标记。 然后，当切割掩模层被确定为与第二边缘或第一边缘自对准时，执行主要特征蚀刻步骤以将主要特征传递到基底中。

公开(公告)号：US08664077B2

公开(公告)日：2014-03-04

申请号：US13372515

申请日：2012-02-14

申请人： Vinay Nair ,  David Pratt ,  Christopher Hawk ,  Richard Housley

发明人： Vinay Nair ,  David Pratt ,  Christopher Hawk ,  Richard Housley

IPC分类号： H01L21/76

CPC分类号： G03F7/70633

摘要： A method for forming a self-aligned overlay mark is disclosed. First, a first region, a second region and a main feature which is disposed between the first region and the second region all disposed on the substrate are provided. The first region defines a first edge and the second region defines a second edge. Second, a cut mask layer is formed to respectively cover the first region and the second region to expose the main feature. Next, the cut mask layer is determined if it is self-aligned with the second edge or the first edge, and creates a self-aligned overlay mark. Later, a main feature etching step is carried out to transfer the main feature into the substrate when the cut mask layer is determined to be self-aligned with the second edge or the first edge.

摘要翻译： 公开了一种形成自对准覆盖标记的方法。 首先，设置设置在基板上的第一区域和第二区域之间的第一区域，第二区域和主要特征。 第一区域限定第一边缘，第二区域限定第二边缘。 第二，形成切割掩模层以分别覆盖第一区域和第二区域以暴露主要特征。 接下来，确定切割掩模层是否与第二边缘或第一边缘自对准，并且产生自对准覆盖标记。 然后，当切割掩模层被确定为与第二边缘或第一边缘自对准时，执行主要特征蚀刻步骤以将主要特征传递到基底中。