专利检索 ap:("Vincent Ho" OR "Wee Kiong Choi" OR "Lap Chan" OR "Wai Kin Chim" OR "Vivian Ng" OR "Cheng Lin Heng" OR "Lee Wee Teo") AND inv:"Cheng Lin Heng" 第 1 页

1.

发明授权
Process to manufacture nonvolatile MOS memory device 有权

公开(公告)号：US06962850B2

公开(公告)日：2005-11-08

申请号：US10676896

申请日：2003-10-01

申请人： Vincent Ho , Wee Kiong Choi , Lap Chan , Wai Kin Chim , Vivian Ng , Cheng Lin Heng , Lee Wee Teo

发明人： Vincent Ho , Wee Kiong Choi , Lap Chan , Wai Kin Chim , Vivian Ng , Cheng Lin Heng , Lee Wee Teo

IPC分类号： H01L21/28 , H01L21/336 , H01L21/8242 , H01L29/423 , H01L29/788

CPC分类号： B82Y10/00 , H01L21/28282 , H01L29/42332 , H01L29/7881 , Y10S438/962

摘要： Devices with embedded silicon or germanium nanocrystals, fabricated using ion implantation, exhibit superior data-retention characteristics relative to conventional floating-gate devices. However, the prior art use of ion implantation for their manufacture introduces several problems. These have been overcome by initial use of rapid thermal oxidation to grow a high quality layer of thin tunnel oxide. Chemical vapor deposition is then used to deposit a germanium doped oxide layer. A capping oxide is then deposited following which the structure is rapid thermally annealed to synthesize the germanium nanocrystals.