公开(公告)号：US20120280736A1

公开(公告)日：2012-11-08

申请号：US13099723

申请日：2011-05-03

Applicant: Viorel Olariu

Inventor： Viorel Olariu

IPC: H03K3/289

CPC classification number: H03K3/0375

Abstract: Circuits and a corresponding method are used to eliminate or greatly reduce SET induced glitch propagation in a radiation hardened integrated circuit. A clock distribution circuit and an integrated circuit portioning can be radiation hardened using one or two latch circuits interspersed through the integrated circuit, each having two or four latch stages.

Abstract translation: 电路和相应的方法用于消除或大大降低辐射硬化集成电路中的SET引发的毛刺传播。 可以使用散布在集成电路中的一个或两个锁存电路来辐射硬化时钟分配电路和集成电路部分，每个具有两个或四个锁存级。

公开(公告)号：US20100159635A1

公开(公告)日：2010-06-24

申请号：US12343874

申请日：2008-12-24

Applicant: Viorel Olariu

Inventor： Viorel Olariu

IPC: H01L21/768 ,  H01L51/10 ,  H01L51/40

CPC classification number: H01L51/0525 ,  H01L51/0021 ,  H01L51/0545 ,  H01L51/102

Abstract: Methods for patterning a conductor through oxidation are provided. Devices fabricated using the method include organic transistors having a gate electrode and dielectric layer patterned by the method, source and drain electrodes, and an organic semiconducting layer.

Abstract translation: 提供了通过氧化图案化导体的方法。 使用该方法制造的器件包括具有通过该方法图案化的栅极电极和电介质层的有机晶体管，源极和漏极以及有机半导体层。

公开(公告)号：US07723153B2

公开(公告)日：2010-05-25

申请号：US11964541

申请日：2007-12-26

Applicant: Viorel Olariu

Inventor： Viorel Olariu

IPC: H01L29/76

CPC classification number: H01L51/102 ,  H01L27/283 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/055

Abstract: A method of forming an organic inverter includes providing a first metal layer having a first portion for coupling a source of an OFET to a first power supply voltage, a second portion for coupling a drain of the OFET to an output terminal and a first load resistor terminal, and a third portion for coupling a second load resistor terminal to a second power supply voltage, providing a semiconductor layer for overlapping a portion of the first and second first metal layer portions to form an OFET active area, and for overlapping a portion of the second and third metal layer portions to form a toad resistor, providing a dielectric layer for overlapping the active area of the OFET and the semiconductor area of the load resistor to isolates the first metal layer and semiconductor area from the second metal layer, and providing a second metal layer for overlapping the active area of the OFET to form a gate of the OFET and an input terminal.

Abstract translation: 一种形成有机逆变器的方法包括提供第一金属层，其具有用于将OFET的源耦合到第一电源电压的第一部分，用于将OFET的漏极耦合到输出端子的第二部分和第一负载电阻器 以及用于将第二负载电阻端子耦合到第二电源电压的第三部分，提供用于重叠第一和第二第一金属层部分的一部分以形成OFET有源区的半导体层，并且用于将一部分 所述第二和第三金属层部分形成ad电阻器，提供用于与所述OFET的有源区域和所述负载电阻器的半导体区域重叠的电介质层，以将所述第一金属层和半导体区域与所述第二金属层隔离，并且提供 第二金属层，用于与OFET的有效区重叠以形成OFET的栅极和输入端。

公开(公告)号：US08258674B2

公开(公告)日：2012-09-04

申请号：US12611298

申请日：2009-11-03

Applicant: Viorel Olariu

Inventor： Viorel Olariu

IPC: H01L41/08

CPC classification number: H01L41/1132 ,  G01K11/265 ,  G01L1/165 ,  G01N29/022

Abstract: A surface acoustic wave sensor to measure physical, biological or chemical parameters is claimed. Using different piezoelectric substrate materials, piezoelectric substrates with different thicknesses or metallizations with different thicknesses or patterns are used to distinguish between the effects of different physical, biological or chemical parameters.

Abstract translation: 声称用于测量物理，生物或化学参数的声表面波传感器。 使用不同的压电基片材料，使用不同厚度的压电基片或具有不同厚度或图案的金属化来区分不同物理，生物或化学参数的影响。

公开(公告)号：US20110101822A1

公开(公告)日：2011-05-05

申请号：US12611298

申请日：2009-11-03

Applicant: Viorel Olariu

Inventor： Viorel Olariu

IPC: H01L41/047

CPC classification number: H01L41/1132 ,  G01K11/265 ,  G01L1/165 ,  G01N29/022

Abstract: A surface acoustic wave sensor to measure physical, biological or chemical parameters is claimed. Using different piezoelectric substrate materials, piezoelectric substrates with different thicknesses or metallizations with different thicknesses or patterns are used to distinguish between the effects of different physical, biological or chemical parameters.

Abstract translation: 声称用于测量物理，生物或化学参数的声表面波传感器。 使用不同的压电基片材料，使用不同厚度的压电基片或具有不同厚度或图案的金属化来区分不同物理，生物或化学参数的影响。

公开(公告)号：US20090170238A1

公开(公告)日：2009-07-02

申请号：US11964549

申请日：2007-12-26

Applicant: Viorel Olariu

Inventor： Viorel Olariu

IPC: H01L51/40

CPC classification number: H01L51/102 ,  C08G2261/3223 ,  C08G2261/92 ,  H01L27/283 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/055

Abstract: A method of forming an organic inverter includes providing a first metal layer having a first portion for coupling a source of a first OFET to a first power supply voltage, a second portion for coupling a drain of the first OFET to an output terminal and to a source of a second OFET, and a third portion for coupling a drain of the second OFET to a second power supply voltage, providing a semiconductor layer for overlapping a portion of the first and second first metal layer portions to form a first OFET active area, and for overlapping a portion of the second and third metal layer portions to form a second OFET active area, providing a dielectric layer for overlapping the active area and isolates the first metal layer and semiconductor layer from the second metal layer, and providing a second metal layer for overlapping the active area of the first OFET to form a gate of the first OFET and an input terminal, and for overlapping the active area of the second OFET to form a floating gate for the second OFET.

Abstract translation: 一种形成有机逆变器的方法包括提供第一金属层，其具有用于将第一OFET的源耦合到第一电源电压的第一部分，用于将第一OFET的漏极耦合到输出端子的第二部分和 源的第二OFET，以及第三部分，用于将第二OFET的漏极耦合到第二电源电压，提供用于重叠第一和第二第一金属层部分的一部分以形成第一OFET有源区的半导体层， 并且用于使第二和第三金属层部分的一部分重叠以形成第二OFET有源区，提供用于重叠有源区的电介质层，并将第一金属层和半导体层与第二金属层隔离，并提供第二金属 层，用于与第一OFET的有效区域重叠以形成第一OFET的栅极和输入端子，并且用于与第二OFET的有源区域重叠以形成浮置栅极 为第二个OFET。

公开(公告)号：US10469062B2

公开(公告)日：2019-11-05

申请号：US13099723

申请日：2011-05-03

Applicant: Viorel Olariu

Inventor： Viorel Olariu

IPC: H03K3/289

Abstract: Circuits and a corresponding method are used to eliminate or greatly reduce SET induced glitch propagation in a radiation hardened integrated circuit. A clock distribution circuit and an integrated circuit portioning can be radiation hardened using one or two latch circuits interspersed through the integrated circuit, each having two or four latch stages.

公开(公告)号：US07718466B2

公开(公告)日：2010-05-18

申请号：US12171982

申请日：2008-07-11

Applicant: Klaus Dimmler ,  Viorel Olariu ,  Thomas S. Moss, III

Inventor： Klaus Dimmler ,  Viorel Olariu ,  Thomas S. Moss, III

IPC: H01L51/40

CPC classification number: H01L51/0005 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545

Abstract: An OFET includes a thick dielectric layer with openings in the active region of a transistor. After the field dielectric layer is formed, semiconductor ink is dropped in the active region cavities in the field dielectric layer, forming the semiconductor layer. The ink is bounded by the field dielectric layer walls. After the semiconductor layer is annealed, dielectric ink is dropped into the same cavities. As with the semiconductor ink, the field dielectric wall confines the flow of the dielectric ink. The confined flow causes the dielectric ink to pool into the cavity, forming a uniform layer within the cavity, and thereby decreasing the probability of pinhole shorting. After the dielectric is annealed, a gate layer covers the active region thereby completing a high performance OFET structure.

Abstract translation: OFET包括在晶体管的有源区中具有开口的厚电介质层。 在形成场介电层之后，将半导体墨水滴落在场介电层的有源区空穴中，形成半导体层。 油墨由场介电层壁界定。 在半导体层退火之后，电介质墨滴落到相同的空腔中。 与半导体油墨一样，场介质壁限制电介质油墨的流动。 限制流动导致电介质墨水进入空腔，在空腔内形成均匀的层，从而降低针孔短路的可能性。 在电介质退火之后，栅极层覆盖有源区，从而完成高性能OFET结构。

公开(公告)号：US07704786B2

公开(公告)日：2010-04-27

申请号：US11964549

申请日：2007-12-26

Applicant: Viorel Olariu

Inventor： Viorel Olariu

IPC: H01L29/76

CPC classification number: H01L51/102 ,  C08G2261/3223 ,  C08G2261/92 ,  H01L27/283 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/055

Abstract: A method of forming an organic inverter includes providing a first metal layer having a first portion for coupling a source of a first OFET to a first power supply voltage, a second portion for coupling a drain of the first OFET to an output terminal and to a source of a second OFET, and a third portion for coupling a drain of the second OFET to a second power supply voltage, providing a semiconductor layer for overlapping a portion of the first and second first metal layer portions to form a first OFET active area, and for overlapping a portion of the second and third metal layer portions to form a second OFET active area, providing a dielectric layer for overlapping the active area and isolates the first metal layer and semiconductor layer from the second metal layer, and providing a second metal layer for overlapping the active area of the first OFET to form a gate of the first OFET and an input terminal, and for overlapping the active area of the second OFET to form a floating gate for the second OFET.

Abstract translation: 一种形成有机逆变器的方法包括提供第一金属层，其具有用于将第一OFET的源耦合到第一电源电压的第一部分，用于将第一OFET的漏极耦合到输出端子的第二部分和 源的第二OFET，以及第三部分，用于将第二OFET的漏极耦合到第二电源电压，提供用于重叠第一和第二第一金属层部分的一部分以形成第一OFET有源区的半导体层， 并且用于使第二和第三金属层部分的一部分重叠以形成第二OFET有源区，提供用于重叠有源区的电介质层，并将第一金属层和半导体层与第二金属层隔离，并提供第二金属 层，用于与第一OFET的有效区域重叠以形成第一OFET的栅极和输入端子，并且用于与第二OFET的有源区域重叠以形成浮置栅极 为第二个OFET。

公开(公告)号：US20090170237A1

公开(公告)日：2009-07-02

申请号：US11964541

申请日：2007-12-26

Applicant: Viorel Olariu

Inventor： Viorel Olariu

IPC: H01L51/40

CPC classification number: H01L51/102 ,  H01L27/283 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/055

Abstract: A method of forming an organic inverter includes providing a first metal layer having a first portion for coupling a source of an OFET to a first power supply voltage, a second portion for coupling a drain of the OFET to an output terminal and a first load resistor terminal, and a third portion for coupling a second load resistor terminal to a second power supply voltage, providing a semiconductor layer for overlapping a portion of the first and second first metal layer portions to form an OFET active area, and for overlapping a portion of the second and third metal layer portions to form a toad resistor, providing a dielectric layer for overlapping the active area of the OFET and the semiconductor area of the load resistor to isolates the first metal layer and semiconductor area from the second metal layer, and providing a second metal layer for overlapping the active area of the OFET to form a gate of the OFET and an input terminal.

Abstract translation: 一种形成有机逆变器的方法包括提供第一金属层，其具有用于将OFET的源耦合到第一电源电压的第一部分，用于将OFET的漏极耦合到输出端子的第二部分和第一负载电阻器 以及用于将第二负载电阻端子耦合到第二电源电压的第三部分，提供用于重叠第一和第二第一金属层部分的一部分以形成OFET有源区的半导体层，并且用于将一部分 所述第二和第三金属层部分形成ad电阻器，提供用于与所述OFET的有源区域和所述负载电阻器的半导体区域重叠的电介质层，以将所述第一金属层和半导体区域与所述第二金属层隔离，并且提供 第二金属层，用于与OFET的有效区重叠以形成OFET的栅极和输入端。