公开(公告)号：US09106179B2

公开(公告)日：2015-08-11

申请号：US13051611

申请日：2011-03-18

申请人： Vishal P. Trivedi ,  Kun-Hin To

发明人： Vishal P. Trivedi ,  Kun-Hin To

IPC分类号： H03B5/08 ,  H03B5/18 ,  H03B5/12 ,  H03B5/00

CPC分类号： H03B5/1228 ,  H03B5/00 ,  H03B5/08 ,  H03B5/12 ,  H03B5/1212 ,  H03B5/1215 ,  H03B5/1243 ,  H03B5/1253

摘要： Apparatus are provided for voltage-controlled oscillators and related systems. An exemplary voltage-controlled oscillator includes an active-circuit arrangement that facilitates generation of an oscillating signal, and a resonator arrangement capacitively coupled to the active-circuit arrangement to influence an oscillation frequency of the oscillating signal based on a difference between a first control voltage and a second control voltage.

摘要翻译： 提供用于压控振荡器和相关系统的装置。 示例性压控振荡器包括有助于产生振荡信号的有源电路装置，以及电容耦合到有源电路装置的谐振器装置，以基于第一控制电压之间的差异来影响振荡信号的振荡频率 和第二控制电压。

公开(公告)号：US20120235757A1

公开(公告)日：2012-09-20

申请号：US13485742

申请日：2012-05-31

申请人： Vishal P. Trivedi ,  Kun-Hin To

发明人： Vishal P. Trivedi ,  Kun-Hin To

IPC分类号： H03B5/12

CPC分类号： H03B5/1228 ,  H03B5/00 ,  H03B5/08 ,  H03B5/12 ,  H03B5/1206 ,  H03B5/1212 ,  H03B5/1215 ,  H03B5/1231 ,  H03B5/1243 ,  H03B5/18

摘要： Apparatus are provided for voltage-controlled oscillators (VCOs) and related systems. An exemplary VCO includes an active-circuit arrangement employing cross-coupled amplifying elements that facilitate generation of an oscillating signal, plus a resonator arrangement capacitively coupled via resonator terminals to primary terminals of the active-circuit arrangement, to influence an oscillation frequency of the oscillating signal based on a difference between control voltages applied to first and second control terminals of the resonator arrangement. When employing bipolar amplifying elements their control terminals are cross-coupled to the opposing resonator terminals. VCO output may be taken from the primary terminals or from the resonator terminals.

摘要翻译： 提供了用于压控振荡器（VCO）和相关系统的装置。 示例性VCO包括使用有助于产生振荡信号的交叉耦合放大元件的有源电路装置，以及经由谐振器端子电容耦合到有源电路装置的初级端子的谐振器装置，以影响振荡的振荡频率 基于施加到谐振器装置的第一和第二控制端子的控制电压之间的差异的信号。 当采用双极放大元件时，其控制端子交叉耦合到相对的谐振器端子。 VCO输出可以从初级端子或谐振器端子取出。

公开(公告)号：US09099957B2

公开(公告)日：2015-08-04

申请号：US13485742

申请日：2012-05-31

申请人： Vishal P. Trivedi ,  Kun-Hin To

发明人： Vishal P. Trivedi ,  Kun-Hin To

IPC分类号： H03B5/08 ,  H03B5/18 ,  H03B5/12 ,  H03B5/00

CPC分类号： H03B5/1228 ,  H03B5/00 ,  H03B5/08 ,  H03B5/12 ,  H03B5/1206 ,  H03B5/1212 ,  H03B5/1215 ,  H03B5/1231 ,  H03B5/1243 ,  H03B5/18

摘要： Apparatus are provided for voltage-controlled oscillators (VCOs) and related systems. An exemplary VCO includes an active-circuit arrangement employing cross-coupled amplifying elements that facilitate generation of an oscillating signal, plus a resonator arrangement capacitively coupled via resonator terminals to primary terminals of the active-circuit arrangement, to influence an oscillation frequency of the oscillating signal based on a difference between control voltages applied to first and second control terminals of the resonator arrangement. When employing bipolar amplifying elements their control terminals are cross-coupled to the opposing resonator terminals. VCO output may be taken from the primary terminals or from the resonator terminals.

摘要翻译： 提供了用于压控振荡器（VCO）和相关系统的装置。 示例性VCO包括使用有助于产生振荡信号的交叉耦合放大元件的有源电路装置，以及经由谐振器端子电容耦合到有源电路装置的初级端子的谐振器装置，以影响振荡的振荡频率 基于施加到谐振器装置的第一和第二控制端子的控制电压之间的差异的信号。 当采用双极放大元件时，其控制端子交叉耦合到相对的谐振器端子。 VCO输出可以从初级端子或谐振器端子取出。

公开(公告)号：US08629732B2

公开(公告)日：2014-01-14

申请号：US13250385

申请日：2011-09-30

申请人： Vishal P. Trivedi ,  Kun-Hin To

发明人： Vishal P. Trivedi ,  Kun-Hin To

IPC分类号： H03B1/00

CPC分类号： H03L7/099 ,  H03B5/1212 ,  H03B5/1228 ,  H03B5/1253

摘要： Apparatus are provided for voltage-controlled oscillators and related systems. An exemplary voltage-controlled oscillator includes a first variable capacitance element, a second variable capacitance element coupled between the first control voltage node and the third node, and an inductive element coupled between the variable capacitance elements to provide an inductance between the variable capacitance elements at an oscillation frequency of an oscillating signal at an output node. The first variable capacitance element is coupled between a first control voltage node and the output node, the second variable capacitance element is coupled to the first control voltage node, and a second inductive element is coupled between the second variable capacitance element and a second control voltage node.

摘要翻译： 提供用于压控振荡器和相关系统的装置。 示例性压控振荡器包括第一可变电容元件，耦合在第一控制电压节点和第三节点之间的第二可变电容元件，以及耦合在可变电容元件之间的电感元件，以在可变电容元件之间提供电感， 在输出节点处的振荡信号的振荡频率。 第一可变电容元件耦合在第一控制电压节点和输出节点之间，第二可变电容元件耦合到第一控制电压节点，第二电感元件耦合在第二可变电容元件与第二控制电压 节点。

公开(公告)号：US20130082790A1

公开(公告)日：2013-04-04

申请号：US13250385

申请日：2011-09-30

申请人： Vishal P. Trivedi ,  Kun-Hin To

发明人： Vishal P. Trivedi ,  Kun-Hin To

IPC分类号： H03B5/12

CPC分类号： H03L7/099 ,  H03B5/1212 ,  H03B5/1228 ,  H03B5/1253

摘要： Apparatus are provided for voltage-controlled oscillators and related systems. An exemplary voltage-controlled oscillator includes a first variable capacitance element, a second variable capacitance element coupled between the first control voltage node and the third node, and an inductive element coupled between the variable capacitance elements to provide an inductance between the variable capacitance elements at an oscillation frequency of an oscillating signal at an output node. The first variable capacitance element is coupled between a first control voltage node and the output node, the second variable capacitance element is coupled to the first control voltage node, and a second inductive element is coupled between the second variable capacitance element and a second control voltage node.

摘要翻译： 提供用于压控振荡器和相关系统的装置。 示例性压控振荡器包括第一可变电容元件，耦合在第一控制电压节点和第三节点之间的第二可变电容元件，以及耦合在可变电容元件之间的电感元件，以在可变电容元件之间提供电感， 在输出节点处的振荡信号的振荡频率。 第一可变电容元件耦合在第一控制电压节点和输出节点之间，第二可变电容元件耦合到第一控制电压节点，第二电感元件耦合在第二可变电容元件与第二控制电压 节点。

公开(公告)号：US08324064B2

公开(公告)日：2012-12-04

申请号：US13250378

申请日：2011-09-30

申请人： Pamela J. Welch ,  Wen Ling M. Huang ,  David G. Morgan ,  Hernan A. Rueda ,  Vishal P. Trivedi

发明人： Pamela J. Welch ,  Wen Ling M. Huang ,  David G. Morgan ,  Hernan A. Rueda ,  Vishal P. Trivedi

IPC分类号： H01L21/329

CPC分类号： H01L29/93

摘要： Methods are disclosed for forming an improved varactor diode having first and second terminals. The methods include providing a substrate having a first surface in which are formed isolation regions separating first and second parts of the diode. A varactor junction is formed in the first part with a first side coupled to the first terminal and a second side coupled to the second terminal via a sub-isolation buried layer (SIBL) region extending under the bottom and partly up the sides of the isolation regions to a further doped region that is ohmically connected to the second terminal. The first part does not extend to the SIBL region. The varactor junction desirably comprises a hyper-abrupt doped region. The combination provides improved tuning ratio, operating frequency and breakdown voltage of the varactor diode while still providing adequate Q.

摘要翻译： 公开了用于形成具有第一和第二端子的改进的变容二极管的方法。 所述方法包括提供具有第一表面的基板，其中形成分离二极管的第一和第二部分的隔离区域。 在第一部分中形成可变电抗器结，其中第一侧耦合到第一端子，而第二侧经由底部下延伸并且部分地在隔离物侧面上的子隔离掩埋层（SIBL）区域耦合到第二端子 区域连接到欧姆连接到第二端子的另一掺杂区域。 第一部分不扩展到SIBL地区。 变容二极管结点理想地包括超突变掺杂区域。 该组合提供改善的变容二极管的调谐比，工作频率和击穿电压，同时仍然提供足够的Q。

公开(公告)号：US07821103B2

公开(公告)日：2010-10-26

申请号：US12207127

申请日：2008-09-09

申请人： Chun-Li Liu ,  Olin K. Hartin ,  Jay P. John ,  Vishal P. Trivedi ,  James A. Kirchgessner

发明人： Chun-Li Liu ,  Olin K. Hartin ,  Jay P. John ,  Vishal P. Trivedi ,  James A. Kirchgessner

IPC分类号： H01L29/93

CPC分类号： H01L29/66174 ,  H01L29/93

摘要： An improved varactor diode (40) is obtained by providing a substrate (41) having a first surface (43), in which are formed a P+ region (53, 46) proximate the first surface (43), a first N region (54, 45) located beneath the P+ region (53, 46), an N well region (56, 44) located beneath the first N region (54, 45) and a first P counter-doped region (55) located between the first N region (54, 45) and the N well region (56, 44), thereby forming an P+NPN structure for the varactor diode. In some embodiments, a second P-type counter-doped region (59) is provided within the N-well region (56, 44) so as to reduce the N doping concentration within the N well region (56, 44) but without creating a further PN junction therein. The net doping profile (52) provides varactor diodes (40) having a larger tuning ratio than varactors (20) without such counter-doped regions. By interchanging N and P regions an N+PNP varactor is obtained.

摘要翻译： 通过提供一种具有第一表面（43）的衬底（41），其中在第一表面（43）附近形成有P +区域（53,46），第一N区域（54） ，45），位于所述P +区（53,46）下方的N阱区（56,44）和位于所述第一N区（54,45）之下的第一P反掺杂区（55） 区域（54,45）和N阱区域（56,44），从而形成用于变容二极管的P + NPN结构。 在一些实施例中，第二P型反掺杂区域（59）设置在N阱区域（56,44）内，以便减小N阱区域（56,44）内的N掺杂浓度，但是不产生 其中一个PN结。 净掺杂分布（52）提供具有比可变电抗器（20）更大的调谐比率的变容二极管（40），而不具有这样的反掺杂区域。 通过交换N和P区域，获得N + PNP变容二极管。

公开(公告)号：US08461012B2

公开(公告)日：2013-06-11

申请号：US12714104

申请日：2010-02-26

申请人： Vishal P. Trivedi

发明人： Vishal P. Trivedi

IPC分类号： H01L21/20

CPC分类号： H01L23/66 ,  H01L23/5225 ,  H01L23/585 ,  H01L29/78 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/00

摘要： A method for forming a semiconductor structure includes forming an isolation region in a semiconductor substrate; forming a conductive layer over the isolation region; forming a first dielectric layer over the conductive layer; forming a plurality of conductive vias extending through the first dielectric layer to the conductive layer and electrically contacting the conductive layer; forming a second dielectric layer over the first dielectric layer; and forming a conductive ground plane in the second dielectric layer. Each of the plurality of conductive vias is in electrical contact with the conductive ground plane, and the conductive ground plane includes an opening, wherein the opening is located directly over the conductive layer. At least one interconnect layer may be formed over the second dielectric layer and may include a transmission line which transmits a signal having a frequency of at least 30 gigahertz.

摘要翻译： 一种形成半导体结构的方法包括：在半导体衬底中形成隔离区; 在所述隔离区上形成导电层; 在所述导电层上形成第一介电层; 形成延伸穿过所述第一介电层到所述导电层并电接触所述导电层的多个导电通路; 在所述第一介电层上形成第二电介质层; 以及在所述第二电介质层中形成导电接地平面。 所述多个导电通孔中的每一个与所述导电接地平面电接触，并且所述导电接地平面包括开口，其中所述开口直接位于所述导电层上方。 可以在第二介电层上形成至少一个互连层，并且可以包括传输具有至少30千兆赫兹频率的信号的传输线。

公开(公告)号：US20120021586A1

公开(公告)日：2012-01-26

申请号：US13250378

申请日：2011-09-30

申请人： Pamela J. Welch ,  Wen Ling M. Huang ,  David G. Morgan ,  Hernan A. Rueda ,  Vishal P. Trivedi

发明人： Pamela J. Welch ,  Wen Ling M. Huang ,  David G. Morgan ,  Hernan A. Rueda ,  Vishal P. Trivedi

IPC分类号： H01L21/329

CPC分类号： H01L29/93

摘要： Methods are disclosed for forming an improved varactor diode having first and second terminals. The methods include providing a substrate having a first surface in which are formed isolation regions separating first and second parts of the diode. A varactor junction is formed in the first part with a first side coupled to the first terminal and a second side coupled to the second terminal via a sub-isolation buried layer (SIBL) region extending under the bottom and partly up the sides of the isolation regions to a further doped region that is ohmically connected to the second terminal. The first part does not extend to the SIBL region. The varactor junction desirably comprises a hyper-abrupt doped region. The combination provides improved tuning ratio, operating frequency and breakdown voltage of the varactor diode while still providing adequate Q.

摘要翻译： 公开了用于形成具有第一和第二端子的改进的变容二极管的方法。 所述方法包括提供具有第一表面的基板，其中形成分离二极管的第一和第二部分的隔离区域。 在第一部分中形成可变电抗器结，其中第一侧耦合到第一端子，而第二侧经由底部下延伸并且部分地在隔离层的侧面上的子隔离掩埋层（SIBL）区域耦合到第二端子 区域连接到欧姆连接到第二端子的另一掺杂区域。 第一部分不扩展到SIBL地区。 变容二极管结点理想地包括超突变掺杂区域。 该组合提供改善的变容二极管的调谐比，工作频率和击穿电压，同时仍然提供足够的Q。

公开(公告)号：US20110267149A1

公开(公告)日：2011-11-03

申请号：US12769046

申请日：2010-04-28

申请人： Vishal P. Trivedi

发明人： Vishal P. Trivedi

IPC分类号： H03B5/12

CPC分类号： H03B5/1218 ,  H03B5/1231 ,  H03B5/1243 ,  H03B5/1265 ,  H03B2200/0008

摘要： A switched capacitor circuit for use at at least one operating frequency is provided. The switched capacitor may include an inductive element having a first terminal coupled to a switching voltage and a second terminal. The switched capacitor circuit may further include a hetero-junction bipolar transistor (HBT) having a base terminal coupled to the second terminal of the inductive element, a first conducting terminal, and a second conducting terminal coupled to a voltage supply terminal. The switched capacitor circuit may further include a capacitor having a first terminal coupled to the first conducting terminal of the HBT and a second terminal coupled to a node, wherein a capacitance value at the node is a function of the switching voltage, and wherein the inductive element is configured such that a combined impedance of an impedance of the capacitor, an impedance of the HBT, and an impedance of inductive element resonates at the at least one operating frequency only when the HBT is substantially non-conducting.

摘要翻译： 提供了以至少一个工作频率使用的开关电容器电路。 开关电容器可以包括具有耦合到开关电压的第一端子和第二端子的电感元件。 开关电容器电路还可以包括具有耦合到电感元件的第二端子的基极端子，耦合到电压端子的第一导电端子和第二导通端子的异质结双极晶体管（HBT）。 开关电容器电路还可以包括具有耦合到HBT的第一导电端子的第一端子和耦合到节点的第二端子的电容器，其中节点处的电容值是开关电压的函数，并且其中感应 元件被配置为使得仅当HBT基本上不导通时，电容器的阻抗，HBT的阻抗和感应元件的阻抗的组合阻抗在至少一个工作频率处共振。