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公开(公告)号:US20190356114A1
公开(公告)日:2019-11-21
申请号:US15982252
申请日:2018-05-17
发明人: Zhenqiang Ma , Munho Kim , Jung-Hun Seo , Sang June Cho
摘要: Superlattice structures composed of single-crystal semiconductor wells and amorphous barriers are provided. Also provided are methods for fabricating the superlattice structures and electronic, optoelectronic, and photonic devices that include the superlattice structures. The superlattice structures include alternating quantum barrier layers and quantum well layers, the quantum barrier layers comprising an amorphous inorganic material and the quantum well layers comprising a single-crystalline semiconductor.
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公开(公告)号:US09955087B1
公开(公告)日:2018-04-24
申请号:US15395905
申请日:2016-12-30
发明人: Zhenqiang Ma , Munho Kim
IPC分类号: H01L21/00 , H04N5/33 , H01L31/0288 , H01L31/18 , H01L31/0224 , G02B6/122 , G02B6/12
CPC分类号: H04N5/33 , G02B6/122 , G02B2006/12061 , G02B2006/12138 , H01L31/028 , H01L31/0352 , H01L31/1085 , H01L31/1808
摘要: Photodetectors based on hydrogen-doped, single-crystalline germanium, including waveguide integrated photodetectors for photonic chip applications are provided. Hydrogen doping provides the single-crystalline germanium with increased radiation absorption in the near infrared region of the electromagnetic spectrum, including at wavelengths of 1550 nm and above.
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