CMOS GOA circuit
    1.
    发明授权

    公开(公告)号:US10311819B2

    公开(公告)日:2019-06-04

    申请号:US15511016

    申请日:2017-02-17

    Inventor: Shijuan Yi

    Abstract: The invention provides a CMOS GOA circuit, comprising a signal processing module having a first and a second TFTs, the first TFT having a gate connected to a first control signal, a source connected to an output node and a drain connected to a third node; the second TFT having a gate and a source connected to a second control signal, and a drain connected to the third node; the first and second control signals having opposite phases, the first and second control signals controlling the first and second TFTs to turn on alternatingly inputting a voltage signal of the output node or a second control signal to the third node. Compared to the known technique using NAND circuit, the invention reduces the number of TFTs required by latch module without affecting operation of the circuit, and facilitates the implementation of the ultra-narrow border or borderless display products.

    CMOS GOA circuit of reducing clock signal loading

    公开(公告)号:US10032425B2

    公开(公告)日:2018-07-24

    申请号:US15119385

    申请日:2016-05-25

    Abstract: The CMOS GOA circuit of reducing clock signal loading comprises the input control module (1), the latch module (2), the reset module (3), the signal process module (4) and the output buffer module (5); in the input control module (1), the clock signal (CK(M)) merely needs to control the second N type thin film transistor and the fifth N type thin film transistor (T2, T5), and the amount of the thin film transistors driven by the clock signal can be decreased to reduce the clock signal loading, and to lower the RC delay and the power consumption of the clock signal; the latch module (2) utilizes the inverted scan drive signal (XGate(N−2)) of the two former N-2th stage GOA unit to be the input control signal of the stage transfer signal Q(N) to solve the competition problem occurs as the stage transfer signal (Q(N)) is inputted.

    AMOLED DOUBLE-SIDE DISPLAY
    3.
    发明申请

    公开(公告)号:US20200219957A1

    公开(公告)日:2020-07-09

    申请号:US16819199

    申请日:2020-03-16

    Abstract: An AMOLED doubled-sided display includes an OLED array layer that includes a plurality of top-emitting OLED units and a plurality of bottom-emitting OLED units arranged alternate with each other to form an array. Each of the top-emitting OLD units and the bottom-emitting OLED units has different thickness for respective anodes and cathodes, to realize the top-emitting characteristics of the top-emitting OLED units and the bottom-emitting characteristics of the bottom-emitting OLED units. As such, by designing an algorithm for a single IC to control image displaying, only a display panel and a control IC are sufficient to achieve double-sided displaying, and ensure an observer standing in front of the display panel will not see mirrored image or directional distorted image, as well as achieve low-cost and quality display result.

    AMOLED DOUBLE-SIDE DISPLAY
    4.
    发明申请

    公开(公告)号:US20190157371A1

    公开(公告)日:2019-05-23

    申请号:US15505098

    申请日:2016-12-27

    Abstract: The invention discloses an AMOLED doubled-sided display, with the OLED array layer comprising a plurality of top-emitting OLED units and a plurality of bottom-emitting OLED units arranged in an array, wherein the top emitting and bottom-emitting OLED units being arranged alternatingly in at least one of the horizontal direction or vertical direction; the top-emitting and bottom-emitting OLED units having different thickness for respective anodes and cathodes, to realize the top-emitting characteristics of the top-emitting OLED units and the bottom-emitting characteristics of the bottom-emitting OLED units; as such, by designing an algorithm for a single IC to control image displaying, only a display panel and a control IC are sufficient to achieve double-sided displaying, and able to ensure an observer standing in front of the display panel will not see mirrored image or directional distorted image, as well as achieve low-cost and quality display result.

    CMOS GOA circuit
    5.
    发明授权

    公开(公告)号:US10242637B2

    公开(公告)日:2019-03-26

    申请号:US15506242

    申请日:2017-02-17

    Inventor: Shijuan Yi

    Abstract: The invention provides a CMOS GOA circuit, which improves the NAND gate in the latch module and the inverter to connect the latch clock signal to the NAND gate in the latch module or the inverter to control the latch module to realize the input and latch of the cascade signal through the voltage change in the latch clock signal. Compared to the known technique, the present invention reduces the number of TFTs required by the latch module without affecting the normal operation of the circuit, and facilitates the implementation of the narrow border or borderless display products.

    AMOLED double-side display
    8.
    发明授权

    公开(公告)号:US11133365B2

    公开(公告)日:2021-09-28

    申请号:US16819199

    申请日:2020-03-16

    Abstract: An AMOLED doubled-sided display includes an OLED array layer that includes a plurality of top-emitting OLED units and a plurality of bottom-emitting OLED units arranged alternate with each other to form an array. Each of the top-emitting OLD units and the bottom-emitting OLED units has different thickness for respective anodes and cathodes, to realize the top-emitting characteristics of the top-emitting OLED units and the bottom-emitting characteristics of the bottom-emitting OLED units. As such, by designing an algorithm for a single IC to control image displaying, only a display panel and a control IC are sufficient to achieve double-sided displaying, and ensure an observer standing in front of the display panel will not see mirrored image or directional distorted image, as well as achieve low-cost and quality display result.

    CMOS GOA CIRCUIT OF REDUCING CLOCK SIGNAL LOADING

    公开(公告)号:US20180151139A1

    公开(公告)日:2018-05-31

    申请号:US15119385

    申请日:2016-05-25

    Abstract: The CMOS GOA circuit of reducing clock signal loading comprises the input control module (1), the latch module (2), the reset module (3), the signal process module (4) and the output buffer module (5); in the input control module (1), the clock signal (CK(M)) merely needs to control the second N type thin film transistor and the fifth N type thin film transistor (T2, T5), and the amount of the thin film transistors driven by the clock signal can be decreased to reduce the clock signal loading, and to lower the RC delay and the power consumption of the clock signal; the latch module (2) utilizes the inverted scan drive signal (XGate(N−2)) of the two former N-2th stage GOA unit to be the input control signal of the stage transfer signal Q(N) to solve the competition problem occurs as the stage transfer signal (Q(N)) is inputted.

    CMOS GOA CIRCUIT
    10.
    发明申请
    CMOS GOA CIRCUIT 审中-公开

    公开(公告)号:US20180301102A1

    公开(公告)日:2018-10-18

    申请号:US15511016

    申请日:2017-02-17

    Inventor: Shijuan Yi

    CPC classification number: G09G3/3677 G09G3/3696 G09G2300/0408 G09G2310/0283

    Abstract: The invention provides a CMOS GOA circuit, comprising a signal processing module having a first and a second TFTs, the first TFT having a gate connected to a first control signal, a source connected to an output node and a drain connected to a third node; the second TFT having a gate and a source connected to a second control signal, and a drain connected to the third node; the first and second control signals having opposite phases, the first and second control signals controlling the first and second TFTs to turn on alternatingly inputting a voltage signal of the output node or a second control signal to the third node. Compared to the known technique using NAND circuit, the invention reduces the number of TFTs required by latch module without affecting operation of the circuit, and facilitates the implementation of the ultra-narrow border or borderless display products.

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