公开(公告)号：US20040118334A1

公开(公告)日：2004-06-24

申请号：US10732119

申请日：2003-12-10

申请人： Wacker Siltronic AG

发明人： Martin Weber ,  Wilfried von Ammon ,  Herbert Schmidt ,  Janis Virbulis ,  Yuri Gelfgat ,  Leonid Gorbunov

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  Y10S117/917 ,  Y10T117/1068

摘要： A silicon single crystal which, over an ingot length of over 10 percent of the total ingot length, has a uniform defect picture and narrow radial dopant and oxygen variations. The process in accordance with the Czochralski method involves bringing about a temperature distribution in the melt in the region of the solidification interface which deviates from rotational symmetry.

摘要翻译： 在单锭长度超过总锭长度的10％以上的硅单晶具有均匀的缺陷图像和窄的径向掺杂剂和氧的变化。 根据Czochralski方法的方法涉及在固化界面的偏离旋转对称性的区域中引起熔体中的温度分布。