公开(公告)号：US06872322B1

公开(公告)日：2005-03-29

申请号：US09362924

申请日：1999-07-27

申请人： Waiching Chow ,  Raney Williams ,  Thorsten B. Lill ,  Arthur Y. Chen

发明人： Waiching Chow ,  Raney Williams ,  Thorsten B. Lill ,  Arthur Y. Chen

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/48

CPC分类号： H01J37/32862 ,  H01L21/02071 ,  H01L21/32137

摘要： A process for etching multiple layers on a substrate 25 in an etching chamber 30 and cleaning a multilayer etchant residue formed on the surfaces of the walls 45 and components of the etching chamber 30. In multiple etching steps, process gas comprising different compositions of etchant gas is used to etch layers on the substrate 25 thereby depositing a compositionally variant etchant residue inside the chamber 30. In one cleaning step, a first cleaning gas is added to the process gas to clean a first residue or to suppress deposition of the first residue onto the chamber surfaces. In a second cleaning step, another residue composition is cleaned off the chamber surfaces using a second cleaning gas composition.

摘要翻译： 在蚀刻室30中蚀刻衬底25上的多个层并清洁形成在壁45的表面上的多层蚀刻残渣和蚀刻室30的部件的方法。在多个蚀刻步骤中，包括不同组成的蚀刻气体 用于蚀刻衬底25上的层，从而在室30内​​沉积组成变化的蚀刻剂残留物。在一个清洁步骤中，将第一清洁气体加入到工艺气体中以清洁第一残留物或抑制第一残留物沉积到 室表面。 在第二清洁步骤中，使用第二清洁气体组合物从室表面清除另外的残余物组合物。

公开(公告)号：US06379575B1

公开(公告)日：2002-04-30

申请号：US08955181

申请日：1997-10-21

申请人： Gerald Zheyao Yin ,  Xue-Yu Qian ,  Patrick L. Leahey ,  Jonathan D. Mohn ,  Waiching Chow ,  Arthur Y. Chen ,  Zhi-Wen Sun ,  Brian K. Hatcher

发明人： Gerald Zheyao Yin ,  Xue-Yu Qian ,  Patrick L. Leahey ,  Jonathan D. Mohn ,  Waiching Chow ,  Arthur Y. Chen ,  Zhi-Wen Sun ,  Brian K. Hatcher

IPC分类号： H01L21302

CPC分类号： C04B41/009 ,  B08B7/0035 ,  C04B41/5346 ,  C04B41/91 ,  C23C16/4405 ,  H01J37/32862 ,  Y10S438/905 ,  C04B41/0027 ,  C04B41/0045 ,  C04B35/00

摘要： An apparatus 20 and process for treating and conditioning an etching chamber 30, and cleaning a thin, non-homogeneous, etch residue on the walls 45 and components of the etching chamber 30. In the etching step, a substrate 25 is etched in the etching chamber 30 to deposit a thin etch residue layer on the surfaces of the walls and components in the chamber. In the cleaning step, cleaning gas is introduced into a remote chamber 40 adjacent to the etching chamber 30, and microwave or RF energy is applied inside the remote chamber to form an activated cleaning gas. A short burst of activated cleaning gas at a high flow rate is introduced into the etching chamber 30 to clean the etch residue on the walls 45 and components of the etching chamber. The method is particularly useful for cleaning etch residue that is chemically adhered to ceramic surfaces in the chamber, for example surfaces comprising aluminum nitride, boron carbide, boron nitride, diamond, silicon oxide, silicon carbide, silicon nitride, titanium oxide, titanium carbide, yttrium oxide, zirconium oxide, or mixtures thereof.

摘要翻译： 一种用于处理和调理蚀刻室30以及清洁壁45和蚀刻室30的部件上的薄的非均匀蚀刻残余物的方法20。在蚀刻步骤中，在蚀刻中蚀刻衬底25 室30，以在室中的壁和部件的表面上沉积薄的蚀刻残留层。 在清洁步骤中，将清洁气体引入邻近蚀刻室30的远程室40中，并且在远程室内部施加微波或RF能量以形成活化的清洁气体。 将高速流动的短时间的活性清洁气体引入蚀刻室30中以清洁壁45上的蚀刻残留物和蚀刻室的部件。 该方法特别可用于清洁化学附着在室中的陶瓷表面的蚀刻残渣，例如包括氮化铝，碳化硼，氮化硼，金刚石，氧化硅，碳化硅，氮化硅，氧化钛，碳化钛， 氧化钇，氧化锆或其混合物。