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    Treatment of etching chambers using activated cleaning gas
    1.
    发明授权
    Treatment of etching chambers using activated cleaning gas 失效
    使用活性清洁气体处理蚀刻室

    公开(公告)号：US06379575B1

    公开(公告)日：2002-04-30

    申请号：US08955181

    申请日：1997-10-21

    申请人： Gerald Zheyao Yin ,  Xue-Yu Qian ,  Patrick L. Leahey ,  Jonathan D. Mohn ,  Waiching Chow ,  Arthur Y. Chen ,  Zhi-Wen Sun ,  Brian K. Hatcher

    发明人： Gerald Zheyao Yin ,  Xue-Yu Qian ,  Patrick L. Leahey ,  Jonathan D. Mohn ,  Waiching Chow ,  Arthur Y. Chen ,  Zhi-Wen Sun ,  Brian K. Hatcher

    IPC分类号： H01L21302

    CPC分类号： C04B41/009 ,  B08B7/0035 ,  C04B41/5346 ,  C04B41/91 ,  C23C16/4405 ,  H01J37/32862 ,  Y10S438/905 ,  C04B41/0027 ,  C04B41/0045 ,  C04B35/00

    摘要： An apparatus 20 and process for treating and conditioning an etching chamber 30, and cleaning a thin, non-homogeneous, etch residue on the walls 45 and components of the etching chamber 30. In the etching step, a substrate 25 is etched in the etching chamber 30 to deposit a thin etch residue layer on the surfaces of the walls and components in the chamber. In the cleaning step, cleaning gas is introduced into a remote chamber 40 adjacent to the etching chamber 30, and microwave or RF energy is applied inside the remote chamber to form an activated cleaning gas. A short burst of activated cleaning gas at a high flow rate is introduced into the etching chamber 30 to clean the etch residue on the walls 45 and components of the etching chamber. The method is particularly useful for cleaning etch residue that is chemically adhered to ceramic surfaces in the chamber, for example surfaces comprising aluminum nitride, boron carbide, boron nitride, diamond, silicon oxide, silicon carbide, silicon nitride, titanium oxide, titanium carbide, yttrium oxide, zirconium oxide, or mixtures thereof.

    摘要翻译： 一种用于处理和调理蚀刻室30以及清洁壁45和蚀刻室30的部件上的薄的非均匀蚀刻残余物的方法20。在蚀刻步骤中，在蚀刻中蚀刻衬底25 室30，以在室中的壁和部件的表面上沉积薄的蚀刻残留层。 在清洁步骤中，将清洁气体引入邻近蚀刻室30的远程室40中，并且在远程室内部施加微波或RF能量以形成活化的清洁气体。 将高速流动的短时间的活性清洁气体引入蚀刻室30中以清洁壁45上的蚀刻残留物和蚀刻室的部件。 该方法特别可用于清洁化学附着在室中的陶瓷表面的蚀刻残渣，例如包括氮化铝，碳化硼，氮化硼，金刚石，氧化硅，碳化硅，氮化硅，氧化钛，碳化钛， 氧化钇，氧化锆或其混合物。

    Self-cleaning etch process
    3.
    发明授权
    Self-cleaning etch process 失效
    自清洁蚀刻工艺

    公开(公告)号：US06699399B1

    公开(公告)日：2004-03-02

    申请号：US09657793

    申请日：2000-09-08

    申请人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

    发明人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

    IPC分类号： C23F400

    CPC分类号： H01L21/02071 ,  Y10S438/905

    摘要： A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.

    摘要翻译： 用于在蚀刻室30中蚀刻基板25并同时清洗沉积在壁45的表面上的薄的，非均匀的蚀刻残留物和蚀刻室30的部件的方法。在蚀刻步骤中，包括蚀刻剂的工艺气体 使用气体来蚀刻蚀刻室30中的衬底25，从而在腔室30内沉积蚀刻残留物。将清洁气体加入到工艺气体足够长的时间内，并以足够高的体积流量比与反应和去除 基本上所有由工艺气体沉积的蚀刻残留物。 本方法有利地在蚀刻过程期间清洁室30中的蚀刻残留物，并且不使用单独的清洁，调理和调味处理步骤。

    Plasma reactor with dynamic RF inductive and capacitive coupling control
    4.
    发明授权
    Plasma reactor with dynamic RF inductive and capacitive coupling control 失效
    具有动态RF感应和电容耦合控制的等离子体电抗器

    公开(公告)号：US06447636B1

    公开(公告)日：2002-09-10

    申请号：US09505578

    申请日：2000-02-16

    申请人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Maocheng Li ,  John Holland ,  Arthur H. Sato ,  Valentin N. Todorov ,  Patrick L. Leahey ,  Robert E. Ryan

    发明人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Maocheng Li ,  John Holland ,  Arthur H. Sato ,  Valentin N. Todorov ,  Patrick L. Leahey ,  Robert E. Ryan

    IPC分类号： H05H100

    CPC分类号： H01J37/32009 ,  H01J37/32082 ,  H01J37/3299 ,  H05H1/46

    摘要： The invention provides a system and a method for dynamic RF inductive and capacitive coupling control to improve plasma substrate processing, as well as for achieving contamination and defect reduction. A plasma reactor includes a substrate support disposed in a chamber. An RF coil is disposed adjacent the chamber for inductively coupling RF energy into the chamber. An electrode is disposed adjacent the chamber and has a voltage for capacitively coupling energy into the chamber. The electrode is spaced from the substrate support and the RF coil. An electrode adjusting member is coupled with the electrode for dynamically adjusting the voltage in the electrode to vary the capacitive coupling for improved plasma ignition and plasma stability. A Faraday shield may be placed between the RF coil and the plasma process region in the chamber to suppress capacitive coupling of the RF coil. Sensors may be provided to monitor the amounts of inductive coupling and capacitive coupling to provide feedback to a controller which is used to adjust the inductive coupling and capacitive coupling in real time to stabilize the plasma and achieve improved processing.

    摘要翻译： 本发明提供了用于动态RF感应和电容耦合控制以改善等离子体基板处理以及实现污染和缺陷减少的系统和方法。 等离子体反应器包括设置在室中的基板支撑件。 射频线圈邻近该腔室设置，用于将射频能量感应耦合到腔室中。 电极邻近该腔室设置并且具有用于将能量电容耦合到腔室中的电压。 电极与衬底支架和RF线圈间隔开。 电极调节构件与电极耦合以动态地调节电极中的电压，以改变电容耦合以改善等离子体点火和等离子体稳定性。 法拉第屏蔽可以放置在RF线圈和腔室中的等离子体处理区域之间，以抑制RF线圈的电容耦合。 可以提供传感器来监测电感耦合和电容耦合的量以向控制器提供反馈，该控制器用于实时调整电感耦合和电容耦合以稳定等离子体并实现改进的处理。

    Silicon texture formulations with diol additives and methods of using the formulations
    5.
    发明授权
    Silicon texture formulations with diol additives and methods of using the formulations 失效
    具有二醇添加剂的硅纹理配方和使用该配方的方法

    公开(公告)号：US08759231B2

    公开(公告)日：2014-06-24

    申请号：US13100692

    申请日：2011-05-04

    申请人： Zhi-Wen Sun ,  Sagar Vijay

    发明人： Zhi-Wen Sun ,  Sagar Vijay

    IPC分类号： H01L21/302

    CPC分类号： H01L31/02366 ,  C23F1/16 ,  H01L31/0236 ,  H01L31/02363 ,  Y02E10/50

    摘要： The present disclosure includes a texture formulation that includes an aliphatic diol, an alkaline compound and water which provides a consistent textured region across a silicon surface suitable for solar cell applications. Processes for texturing a crystalline silicon substrate using these formulations are also described.

    摘要翻译： 本公开内容包括包含脂族二醇，碱性化合物和水的纹理制剂，其在适于太阳能电池应用的硅表面上提供一致的纹理区域。 还描述了使用这些制剂对晶体硅衬底进行纹理化的工艺。

    SOL-GEL BASED ANTIREFLECTIVE COATINGS USING ALKYLTRIALKOXYSILANE BINDERS HAVING LOW REFRACTIVE INDEX AND HIGH DURABILITY
    7.
    发明申请
    SOL-GEL BASED ANTIREFLECTIVE COATINGS USING ALKYLTRIALKOXYSILANE BINDERS HAVING LOW REFRACTIVE INDEX AND HIGH DURABILITY 有权
    使用具有低折射率和高耐久性的烷基酮树脂粘合剂的基于溶胶凝胶的抗反射涂层

    公开(公告)号：US20130095237A1

    公开(公告)日：2013-04-18

    申请号：US13273007

    申请日：2011-10-13

    申请人： Nikhil D. Kalyankar ,  Zhi-Wen Sun ,  Jeroen Van Duren ,  Mark Lewis ,  Liang Liang

    发明人： Nikhil D. Kalyankar ,  Zhi-Wen Sun ,  Jeroen Van Duren ,  Mark Lewis ,  Liang Liang

    IPC分类号： B05D5/06 ,  C09D7/12 ,  B82Y30/00

    CPC分类号： C09D1/00 ,  C03C17/008 ,  C03C17/22 ,  C03C17/30 ,  C08K3/36 ,  C09D5/006 ,  C09D7/61 ,  C09D7/67 ,  G02B1/115

    摘要： Methods and compositions for forming porous low refractive index coatings on substrates are provided. The method comprises coating a substrate with a sol-formulation comprising silica based nanoparticles and an alkyltrialkoxysilane based binder. Use of the alkyltrialkoxysilane based binder results in a porous low refractive index coating having bimodal pore distribution including mesopores formed from particle packing and micropores formed from the burning off of organics including the alkyl chain covalently bonded to the silicon. The mass ratio of binder to particles may vary from 0.1 to 20. Porous coatings formed according to the embodiments described herein demonstrate good optical properties (e.g. a low refractive index) while maintaining good mechanical durability due to the presence of a high amount of binder and a close pore structure.

    摘要翻译： 提供了在基底上形成多孔低折射率涂层的方法和组合物。 该方法包括用包含二氧化硅基纳米颗粒和烷基三烷氧基硅烷基粘合剂的溶胶制剂涂覆基材。 使用烷基三烷氧基硅烷基粘合剂导致具有双峰孔分布的多孔低折射率涂层，包括由颗粒填充形成的介孔和由共价键合到硅上的烷基链的有机物燃烧形成的微孔。 粘合剂与颗粒的质量比可以在0.1至20之间变化。根据本文所述实施方案形成的多孔涂层表现出良好的光学性能（例如低折射率），同时由于存在大量粘合剂而保持良好的机械耐久性， 密闭孔结构。

    Silicon Texturing Formulations for Solar Applications
    10.
    发明申请
    Silicon Texturing Formulations for Solar Applications 审中-公开
    太阳能应用的硅纹理配方

    公开(公告)号：US20110070744A1

    公开(公告)日：2011-03-24

    申请号：US12885360

    申请日：2010-09-17

    申请人： Zhi-Wen Sun ,  Minh Anh Nguyen

    发明人： Zhi-Wen Sun ,  Minh Anh Nguyen

    IPC分类号： H01L21/306 ,  C09K13/02

    CPC分类号： H01L31/02363 ,  Y02E10/50

    摘要： The current invention describes a process and texturing solution for texturing a crystalline silicon substrate to provide a light trapping surface within a crystalline silicon based solar cell. In an embodiment the texturing process includes a pre-treatment of hydrofluoric acid followed by the application of a texturing solution that includes potassium hydroxide (KOH) and butanol. The application of the texturing solution may be followed by a hydrofluoric acid post-treatment. A combinatorial method of optimizing the textured surface of a crystalline silicon substrate is also described.

    摘要翻译： 本发明描述了一种用于纹理化晶体硅衬底以在晶体硅基太阳能电池内提供光捕获表面的工艺和纹理解决方案。 在一个实施方案中，变形过程包括氢氟酸的预处理，然后施加包括氢氧化钾（KOH）和丁醇的变形溶液。 变形溶液的应用之后可以是氢氟酸后处理。 还描述了优化结晶硅衬底的纹理表面的组合方法。