公开(公告)号：US20130295739A1

公开(公告)日：2013-11-07

申请号：US13461532

申请日：2012-05-01

申请人： Wen Chu HSIAO ,  Lai Wan CHONG ,  Chun-Chieh WANG ,  Ying Min CHOU ,  Hsiang Hsiang KO ,  Ying-Lang WANG

发明人： Wen Chu HSIAO ,  Lai Wan CHONG ,  Chun-Chieh WANG ,  Ying Min CHOU ,  Hsiang Hsiang KO ,  Ying-Lang WANG

IPC分类号： H01L21/336

CPC分类号： H01L29/7848 ,  H01L21/28518 ,  H01L29/0603 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66515 ,  H01L29/6653 ,  H01L29/66636 ,  H01L29/7845 ,  H01L29/7847

摘要： In a method of manufacturing a semiconductor device, a source/drain feature is formed over a substrate. A Si-containing layer is formed over the source/drain feature. A metal layer is formed over the Si-containing layer. A metal silicide layer is formed from the metal layer and Si in the Si-containing layer.

摘要翻译： 在制造半导体器件的方法中，在衬底上形成源极/漏极特征。 在源极/漏极特征上形成含Si层。 在含Si层上形成金属层。 金属硅化物层由金属层和含Si层中的Si形成。

公开(公告)号：US20130256663A1

公开(公告)日：2013-10-03

申请号：US13437209

申请日：2012-04-02

申请人： Lai Wan CHONG ,  Wen Chu HSIAO ,  Ying Min CHOU ,  Hsiang Hsiang KO

发明人： Lai Wan CHONG ,  Wen Chu HSIAO ,  Ying Min CHOU ,  Hsiang Hsiang KO

IPC分类号： H01L21/20 ,  H01L29/04 ,  H01L21/336

CPC分类号： H01L29/7848 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/04 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/78

摘要： A semiconductor structure that includes crystalline surfaces and amorphous hydrophilic surfaces is provided. The hydrophilic surfaces are treated with silane that includes a hydrophobic functional group, converting the hydrophilic surfaces to hydrophobic surfaces. Chemical vapor deposition or other suitable deposition methods are used to simultaneously deposit a material on both surfaces and due to the surface treatment, the deposited material exhibits superior adherence qualities on both surfaces. In one embodiment, the structure is an opening formed in a semiconductor substrate and bounded by at least one portion of a crystalline silicon surface and at least one portion of an amorphous silicon oxide structure.

摘要翻译： 提供了包括晶体表面和无定形亲水表面的半导体结构。 亲水表面用含有疏水官能团的硅烷处理，将亲水表面转化为疏水表面。 化学气相沉积或其他合适的沉积方法用于同时在两个表面上沉积材料，并且由于表面处理，沉积的材料在两个表面上表现出优异的附着性。 在一个实施例中，该结构是形成在半导体衬底中并由结晶硅表面的至少一部分和非晶氧化硅结构的至少一部分限定的开口。

公开(公告)号：US20130049101A1

公开(公告)日：2013-02-28

申请号：US13221160

申请日：2011-08-30

申请人： Wen Chu HSIAO ,  Ju Wen HSIAO ,  Ying Min CHOU ,  Hsiang Hsiang KO ,  Ying-Lang WANG

发明人： Wen Chu HSIAO ,  Ju Wen HSIAO ,  Ying Min CHOU ,  Hsiang Hsiang KO ,  Ying-Lang WANG

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66636 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/0262 ,  H01L21/30604 ,  H01L29/165 ,  H01L29/167 ,  H01L29/7834 ,  H01L29/7848

摘要： A semiconductor structure and method for forming the same provide a high mobility stressor material suitable for use as source/drain regions or other active devices. The structure is formed in a substrate opening and is doped with an impurity such as boron in upper portions but is void of the impurity in regions that contact the surfaces of the opening. The structure is therefore resistant to out-diffusion of the dopant impurity during high temperature operations and may be formed through selective deposition using reduced pressure chemical vapor deposition or reduced pressure epitaxial deposition.

摘要翻译： 半导体结构及其形成方法提供适合用作源极/漏极区域或其它有源器件的高迁移率应力源材料。 该结构形成在衬底开口中，并且在上部掺杂有诸如硼的杂质，但是在与开口的表面接触的区域中不含杂质。 因此，该结构在高温操作期间抵抗掺杂剂杂质的扩散，并且可以通过使用减压化学气相沉积或减压外延沉积的选择性沉积来形成。