公开(公告)号：US6086730A

公开(公告)日：2000-07-11

申请号：US298107

申请日：1999-04-22

申请人： Wen Hong Liu ,  Gang Peng ,  Tsutomu Yamashita ,  Tu Chen

发明人： Wen Hong Liu ,  Gang Peng ,  Tsutomu Yamashita ,  Tu Chen

IPC分类号： C23C14/06 ,  C23C14/34 ,  G11B5/84 ,  G11B5/851

CPC分类号： G11B5/8408 ,  C23C14/0605 ,  C23C14/34 ,  G11B5/851

摘要： Sputtering method for producing amorphous hydrogenated carbon thin films with high sp.sup.3 content. By sputtering the carbon with a pulsed DC power supply having high voltage peaks, a carbon film with remarkably high sp.sup.3 bonding fraction can be obtained. Previously, carbon films with a very high sp.sup.3 fraction film with content as high (e.g. as 80%) could only be produced by methods such as filtered cathodic arc deposition or chemical vapor deposition methods (CVD) such as plasma-enhanced chemical vapor deposition (PE-CVD) and ion-beam deposition operating at some narrowly defined range of deposition conditions. It is very advantageous to use sputtering to create a high sp.sup.3 content film, since sputtering is more manufacturable and has higher productivity compared to CVD or ion-beam deposition methods. The resultant carbon film has excellent durability and corrosion resistance capability down to very low thickness. Also compared to PE-CVD and ion-beam deposition, the new sputtering process produce much less particles and the process can be run on a manufacturing tool for much longer time, thereby increasing the productivity of the machine, and providing disks with higher quality.

摘要翻译： 用于生产具有高sp3含量的无定形氢化碳薄膜的溅射方法。 通过用具有高电压峰值的脉冲直流电源溅射碳，可以获得具有非常高的sp 3键合分数的碳膜。 以前，具有高含量（例如80％）的非常高的sp 3级分的膜的碳膜只能通过诸如过滤阴极电弧沉积或化学气相沉积法（CVD）的方法来产生，例如等离子体增强化学气相沉积（ PE-CVD）和离子束沉积操作在一些狭窄的沉积条件范围内。 使用溅射以产生高的sp3含量膜是非常有利的，因为与CVD或离子束沉积方法相比，溅射更可制造并且具有更高的生产率。 所得的碳膜具有优异的耐久性和耐腐蚀性能，从而达到非常低的厚度。 与PE-CVD和离子束沉积相比，新的溅射工艺产生的颗粒少得多，该工艺可以在制造工具上运行更长时间，从而提高机器的生产率，并提供更高质量的磁盘。

公开(公告)号：US06753060B1

公开(公告)日：2004-06-22

申请号：US10106485

申请日：2002-03-27

申请人： Jianwei Liu ,  Michael Joseph Stirniman ,  Wen Hong Liu ,  Jing Gui

发明人： Jianwei Liu ,  Michael Joseph Stirniman ,  Wen Hong Liu ,  Jing Gui

IPC分类号： G11B5725

CPC分类号： G11B5/725 ,  G11B11/10584 ,  G11B11/10586 ,  Y10T428/265 ,  Y10T428/3154

摘要： A data/information storage and retrieval medium, comprising: (a) a disk-shaped substrate including at least one surface with a layer stack thereon and including at least one magnetic or magneto-optical (“MO”) recording layer and an uppermost, protective overcoat layer comprising a carbon (C)-based material; and (b) a lubricant topcoat layer on the protective overcoat layer, the lubricant topcoat layer treated solely with UV radiation at a dosage sufficient to increase the glide yield, decrease the glide noise, and increase the number of CSS pass cycles of the medium before failure, relative to that of the same medium but with an untreated lubricant topcoat layer.

摘要翻译： 一种数据/信息存储和取回介质，包括：（a）盘状基板，其包括至少一个表面，其上堆叠有层叠层，并且包括至少一个磁或磁光（“MO”）记录层和最上层， 包含基于碳（C）的材料的保护性外涂层; 和（b）保护性外涂层上的润滑剂顶涂层，仅以UV辐射处理的润滑剂外涂层，其用量足以增加滑移产率，降低滑翔噪声，并增加介质的CSS通过循环次数 相对于相同介质的失效，但具有未处理的润滑剂顶涂层。

公开(公告)号：US07894458B2

公开(公告)日：2011-02-22

申请号：US11587810

申请日：2005-04-28

申请人： Lin Tao Jiang ,  Wen Hong Liu ,  Zhuhua Hu ,  Yu Fa Ma ,  Lin Wei Jiang

发明人： Lin Tao Jiang ,  Wen Hong Liu ,  Zhuhua Hu ,  Yu Fa Ma ,  Lin Wei Jiang

IPC分类号： H04L12/28

CPC分类号： H04L12/4641 ,  H04L12/18 ,  H04L61/106 ,  H04L61/6077

摘要： The present invention provides one kind of IP telecom network system and its realizing method, and a method of building virtual private network and carrying out multicast based on this IP telecom network, and a method of managing resource in this IP telecom network etc. The IP telecom network system includes at least one complex address no-connection data network including at least one address mapping device, several IP networks and several edge pass devices for connection between the IP network and data network address. Each of the devices and the edge pass devices in the data network has one distributed data network address, each of the devices and the edge pass devices in the IP network has one distributed IP address, and the mapping relation between the IP address and the data network address is maintained in the address mapping table in the address mapping device. The IP network provided by this invention can be work as the next generation IP telecom network The IP telecom network system can realize the integration of telecom business in one IP network.

摘要翻译： 本发明提供了一种IP电信网络系统及其实现方法，以及构建虚拟专用网络并基于该IP电信网络进行组播的方法，以及在该IP电信网络中管理资源的方法等.IP 电信网络系统包括至少一个复杂地址无连接数据网络，其包括至少一个地址映射设备，若干IP网络和用于IP网络与数据网络地址之间的连接的若干边缘通过设备。 数据网络中的每个设备和边缘传输设备都有一个分布式数据网络地址，IP网络中的每个设备和边缘传输设备都有一个分布式IP地址，IP地址和数据之间的映射关系 网络地址保存在地址映射设备的地址映射表中。 本发明提供的IP网络可以作为下一代IP电信网络工作.IP电信网络系统可以实现电信业务在一个IP网络中的集成。

公开(公告)号：US06815054B1

公开(公告)日：2004-11-09

申请号：US09986863

申请日：2001-11-13

申请人： Wen Hong Liu ,  Yao-Tzung Roger Shih ,  Taesun Ernest Kim ,  Chung Yuang Shih

发明人： Wen Hong Liu ,  Yao-Tzung Roger Shih ,  Taesun Ernest Kim ,  Chung Yuang Shih

IPC分类号： G11B572

CPC分类号： G11B11/10584 ,  G11B5/656 ,  G11B5/72 ,  G11B5/8408 ,  G11B11/10586 ,  Y10T428/30

摘要： A method of forming a layer of a hard, abrasion, and corrosion-resistant hydrogenated carbon (C:H) material on a substrate surface comprises steps of: (a) providing a vacuum chamber including a carbon sputtering target in the interior space thereof; (b) providing a substrate in the chamber interior space, a surface of the substrate the sputtering target; (c) supplying the vacuum chamber with at least one hydrocarbon gas and at least one inert gas at separately controllable flow rates and applying a sufficient negative potential to the carbon target to generate a plasma in said interior space to deposit a layer of the C:H material on the substrate surface by a process comprising simultaneous sputtering of the carbon sputtering target and plasma enhanced chemical vapor deposition (PECVD) of carbon and hydrogen from the hydrocarbon gas, wherein: step (c) includes separately controlling the flow rates of each of the hydrocarbon and inert gases such that the amount of C atoms in the C:H which are contributed by the PECVD component of the process is less than about 50 at. %. Embodiments of the invention include utilizing the C:H material as a protective overcoat layer for magnetic and magneto-optical recording media.

摘要翻译： 在基材表面上形成硬质，耐磨和耐腐蚀氢化碳（C：H）材料层的方法包括以下步骤：（a）在其内部空间中提供包括碳溅射靶的真空室; （b）在所述室内部空间中提供衬底，所述衬底的所述溅射靶的表面;（c）以独立可控的流速向所述真空室提供至少一种烃气体和至少一种惰性气体，并施加足够的负极 通过包括碳溅射靶的同时溅射和碳的等离子体增强化学气相沉积（PECVD）的方法，在所述内部空间中产生等离子体的潜力以沉积在衬底表面上的C：H材料层，以及 来自烃气体的氢，其中：步骤（c）包括分别控制每种烃和惰性气体的流速，使得C：H中的C原子的量为 由PECVD组件重新贡献的过程小于约50。 本发明的实施例包括利用C：H材料作为磁和磁光记录介质的保护性外涂层。