公开(公告)号：US08236693B2

公开(公告)日：2012-08-07

申请号：US11748743

申请日：2007-05-15

申请人： Wen Yu ,  Paul Besser ,  Bin Yang ,  Haijiang Yu ,  Simon S. Chan

发明人： Wen Yu ,  Paul Besser ,  Bin Yang ,  Haijiang Yu ,  Simon S. Chan

IPC分类号： H01L21/44

CPC分类号： H01L21/324 ,  H01L21/28052 ,  H01L29/66507 ,  H01L29/78

摘要： The gate and active regions of a device are formed and alternating steps of applying and removing nitride and oxide layers allows exposing silicon in different areas while keeping silicon or polysilicon in other area covered with nitride. Metal layers are deposited over the exposed silicon or polysilicon and annealing forms a silicide layer in the selected exposed areas. The oxide and/or nitride layers are removed from the covered areas and another metal layer is deposited. The anneal process is repeated with silicide of one thickness formed over the second exposed areas with additional thickness of silicide formed over the previous silicide thickness.

摘要翻译： 形成器件的栅极和有源区，并且施加和去除氮化物和氧化物层的交替步骤允许在不同区域暴露硅，同时保持覆盖有氮化物的其它区域中的硅或多晶硅。 金属层沉积在暴露的硅或多晶硅上，退火在所选择的暴露区域中形成硅化物层。 氧化物层和/或氮化物层从被覆盖区域移除，另一个金属层被沉积​​。 在第二暴露区域上形成一层厚度的硅化物，并在先前的硅化物厚度上形成附加的硅化物厚度来重复退火工艺。

公开(公告)号：US20080286921A1

公开(公告)日：2008-11-20

申请号：US11748743

申请日：2007-05-15

申请人： Wen Yu ,  Paul Besser ,  Bin Yang ,  Haijiang Yu ,  Simon S. Chan

发明人： Wen Yu ,  Paul Besser ,  Bin Yang ,  Haijiang Yu ,  Simon S. Chan

IPC分类号： H01L21/8234

CPC分类号： H01L21/324 ,  H01L21/28052 ,  H01L29/66507 ,  H01L29/78

摘要： The gate and active regions of a device are formed and alternating steps of applying and removing nitride and oxide layers allows exposing silicon in different areas while keeping silicon or polysilicon in other area covered with nitride. Metal layers are deposited over the exposed silicon or polysilicon and annealing forms a silicide layer in the selected exposed areas. The oxide and/or nitride layers are removed from the covered areas and another metal layer is deposited. The anneal process is repeated with silicide of one thickness formed over the second exposed areas with additional thickness of silicide formed over the previous silicide thickness.

摘要翻译： 形成器件的栅极和有源区，并且施加和去除氮化物和氧化物层的交替步骤允许在不同区域暴露硅，同时保持覆盖有氮化物的其它区域中的硅或多晶硅。 金属层沉积在暴露的硅或多晶硅上，退火在所选择的暴露区域中形成硅化物层。 氧化物层和/或氮化物层从被覆盖区域移除，另一个金属层被沉积​​。 在第二暴露区域上形成一层厚度的硅化物，并在先前的硅化物厚度上形成附加的硅化物厚度来重复退火工艺。

公开(公告)号：US20230087429A1

公开(公告)日：2023-03-23

申请号：US18071337

申请日：2022-11-29

申请人： Giovanni Gilardi ,  Haijiang Yu ,  Ansheng Liu ,  Xiaoxing Zhu ,  Yuliya Akulova ,  Raghuram Narayan ,  Pierre Doussiere ,  Christian Malouin ,  Olufemi Dosunmu

发明人： Giovanni Gilardi ,  Haijiang Yu ,  Ansheng Liu ,  Xiaoxing Zhu ,  Yuliya Akulova ,  Raghuram Narayan ,  Pierre Doussiere ,  Christian Malouin ,  Olufemi Dosunmu

IPC分类号： G02B6/12 ,  H01S5/026 ,  H01S5/50

摘要： Embodiments herein relate to a photonic integrated circuit (PIC). The PIC may include a transmit module and a receive module. An optical port of the PIC may be coupled to the transmit module or the receive module. A semiconductor optical amplifier (SOA) may be positioned in a signal pathway between the optical port and the transmit module or the receive module. Other embodiments may be described and/or claimed.