公开(公告)号：US08895445B2

公开(公告)日：2014-11-25

申请号：US13228108

申请日：2011-09-08

申请人： Wen-Kuo Hsieh ,  Marowen Ng ,  Ming-Chung Liang ,  Hsin-Yi Tsai

发明人： Wen-Kuo Hsieh ,  Marowen Ng ,  Ming-Chung Liang ,  Hsin-Yi Tsai

IPC分类号： H01L21/311 ,  H01L21/768

CPC分类号： H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816

摘要： A method for forming vias and trenches for an interconnect structure on a substrate includes exposing via pitch reduction patterns in a photoresist layer, developing the patterns to remove the via pitch reduction patterns, etching the photoresist layer partially using a polymer gas to reshape the pattern into small via shapes, and etching the remaining photoresist layer to extend the reshaped pattern. The reshaped small via shape patterns have a smaller pitch than the via pitch reduction patterns in a long direction. For via pitch reduction patterns having two vias each, the pattern has a peanut-shape. During the reshaping etch operation, the polymer gas deposits more in a pinched-in middle section while allowing downward etch in unpinched sections.

摘要翻译： 用于形成衬底上的互连结构的通路和沟槽的方法包括通过光刻胶层中的节距减小图案曝光，显影图案以去除通孔间距减小图案，使用聚合物气体部分地蚀刻光致抗蚀剂层以将图案重新形成为 小通孔形状，并蚀刻剩余的光致抗蚀剂层以延伸重塑图案。 重新成形的小通孔形状图案具有比在长方向上的通孔间距减小图案更小的间距。 对于具有每个具有两个通孔的通孔间距减小图案，图案具有花生形状。 在重新成形蚀刻操作期间，聚合物气体更多地沉积在夹入的中间部分中，同时允许在未切割的部分中进行向下蚀刻。