Semiconductor device for optical dosage measurement
    2.
    发明授权
    Semiconductor device for optical dosage measurement 失效
    用于光学剂量测量的半导体器件

    公开(公告)号:US4385309A

    公开(公告)日:1983-05-24

    申请号:US172433

    申请日:1980-07-25

    摘要: A semiconductor for the measurement of optical radiation dosage comprising a semiconductor body having a doped surface layer on a doped substrate, the surface layer having a conductivity appreciably higher than the substrate thereby to form at the transition a potential barrier with a space charge region whereat carrier pairs are produced with the incidence of optical radiation, where various parameters of the surface layer and the substrate are so selected that the conductivity due to stored photoconductivity varies according to a chosen characteristic law with change in optical radiation dosage, and electrodes applied to the surface layer are connected in a measuring circuit to measure the stored photoconductivity.

    摘要翻译: 一种用于测量光辐射剂量的半导体,包括在掺杂衬底上具有掺杂表面层的半导体本体,所述表面层具有明显高于衬底的导电性,从而在转变处形成具有空间电荷区域的势垒, 产生了具有光辐射入射的对,其中表面层和衬底的各种参数如此选择,使得由于存储的光电导率导致的导电性根据所选择的光辐射剂量变化的特征定律而变化,并且施加到表面的电极 层连接在测量电路中以测量所存储的光电导率。