公开(公告)号：US20230027086A1

公开(公告)日：2023-01-26

申请号：US17954679

申请日：2022-09-28

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Cherngye HWANG ,  Brian R. YORK ,  Andrew CHEN ,  Thao A. NGUYEN ,  Yongchul AHN ,  Xiaoyong LIU ,  Hongquan JIANG ,  Zheng GAO ,  Kuok San HO

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01F10/32 ,  G11B5/39

Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.

公开(公告)号：US20210336127A1

公开(公告)日：2021-10-28

申请号：US16861118

申请日：2020-04-28

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Cherngye HWANG ,  Brian R. YORK ,  Andrew CHEN ,  Thao A. NGUYEN ,  Yongchul AHN ,  Xiaoyong LIU ,  Hongquan JIANG ,  Zheng GAO ,  Kuok San HO

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01F10/32 ,  G11B5/39

Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.