公开(公告)号：US20060111229A1

公开(公告)日：2006-05-25

申请号：US11326627

申请日：2006-01-06

申请人： William Aitkenhead ,  Glen Jorgensen ,  Robert Standley

发明人： William Aitkenhead ,  Glen Jorgensen ,  Robert Standley

IPC分类号： B04B11/00

CPC分类号： B04B5/0442 ,  B04B2005/0492 ,  F16L27/087 ,  F16L39/06

摘要： A centrifuge (10) including a first rotatable mechanism (60) having a rotation axis with a fluid retentive housing (20) being coaxially mounted on the first rotatable mechanism for co-rotation therewith; a second rotatable mechanism (90) having a rotation axis with the first and second rotatable mechanisms being coaxially interconnected for co-rotation around a common axis; and fluid tubing (70) connected to the axis of the fluid retentive housing and having a distal length that extends axially outwardly from the fluid retentive housing. A support arm (50) is mounted to the second rotatable mechanism, a support tube (80) receives therethrough at least a part of the distal length of the fluid tubing, and a bearing member (82) rotatably supports the support tube in the support arm, whereby upon rotation of the first and second rotatable mechanisms, the fluid tubing is free to one of rotate with and rotate relative to the support tube.

摘要翻译： 一种离心机（10），其包括具有旋转轴线的第一可旋转机构（60），所述旋转轴线与流体保持壳体（20）同轴地安装在所述第一可旋转机构上以与其共同旋转; 具有旋转轴线的第二可旋转机构（90），所述第一和第二可旋转机构同轴地互连以围绕公共轴线共旋转; 以及连接到流体保持壳体的轴线并且具有从流体保持壳体轴向向外延伸的远端长度的流体管道（70）。 支撑臂（50）安装到第二可旋转机构，支撑管（80）通过其中的流体管道的远端长度的至少一部分容纳，并且轴承构件（82）可旋转地支撑支撑管在支撑件 由此在第一和第二可旋转机构旋转时，流体管道可以相对于支撑管旋转并旋转。

公开(公告)号：US20060075960A1

公开(公告)日：2006-04-13

申请号：US11284120

申请日：2005-11-21

申请人： Marco Borgini ,  Daniela Gambaro ,  Marco Ravani ,  Michael Ries ,  Laura Sacchetti ,  Robert Standley ,  Robert Falster ,  Mark Stinson

发明人： Marco Borgini ,  Daniela Gambaro ,  Marco Ravani ,  Michael Ries ,  Laura Sacchetti ,  Robert Standley ,  Robert Falster ,  Mark Stinson

IPC分类号： C30B11/00

CPC分类号： H01L21/3225 ,  Y10T117/10

摘要： A process for nucleating and growing oxygen precipitates in a silicon wafer, including subjecting a wafer having a non-uniform concentration of crystal lattice vacancies with the concentration of vacancies in the bulk layer being greater than the concentration of vacancies in the surface layer to a non-isothermal heat treatment to form of a denuded zone in the surface layer and to cause the formation and stabilization of oxygen precipitates having an effective radial size 0.5 nm to 30 nm in the bulk layer. The process optionally includes subjecting the stabilized wafer to a high temperature thermal process (e.g. epitaxial deposition, rapid thermal oxidation, rapid thermal nitridation and etc.) at temperatures in the range of 1000 OC to 1275 OC without causing the dissolution of the stabilized oxygen precipitates.

摘要翻译： 一种用于在硅晶片中成核和生长氧沉淀物的方法，包括使具有不均匀浓度的晶格空位的晶片与本体层中的空位浓度大于表层中的空位浓度， 进行等温热处理以形成表面层中的剥离区域，并且使本体层中具有0.5nm至30nm有效径向尺寸的氧沉淀物的形成和稳定化。 该方法任选地包括在1000℃至1275℃范围内的温度下使稳定的晶片经受高温热处理（例如外延沉积，快速热氧化，快速热氮化等），而不会使稳定的氧沉淀物溶解 。

公开(公告)号：US20060138601A1

公开(公告)日：2006-06-29

申请号：US11104544

申请日：2005-04-13

申请人： Michael Seacrist ,  Gregory Wilson ,  Robert Standley

发明人： Michael Seacrist ,  Gregory Wilson ,  Robert Standley

IPC分类号： H01L23/58

CPC分类号： H01L21/3225

摘要： A heteroepitaxial semiconductor wafer includes a heteroepitaxial layer forming the front surface of the wafer that includes a secondary material having a different crystal structure than that of the wafer primary material. The heteroepitaxial layer is substantially free of defects. A surface layer includes the primary material and is free of the secondary material. The surface layer borders the heteroepitaxial layer. A bulk layer includes the primary material and is free of the secondary material. The bulk layer borders the surface layer and extends through the central plane. An SOI wafer and a method of making wafers is disclosed.

摘要翻译： 异质外延半导体晶片包括形成晶片前表面的异质外延层，其包括具有与晶片原材料不同的晶体结构的二次材料。 异质外延层基本上没有缺陷。 表面层包括主要材料并且不含辅助材料。 表面层与异质外延层相接。 本体层包括主要材料并且不含辅助材料。 体层与表面层相邻并延伸穿过中心平面。 公开了SOI晶片和制造晶片的方法。