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    Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates
    1.
    发明申请
    Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates 审中-公开
    制备具有不均匀分布稳定的氧沉淀物的半导体衬底的方法

    公开(公告)号：US20060075960A1

    公开(公告)日：2006-04-13

    申请号：US11284120

    申请日：2005-11-21

    申请人： Marco Borgini ,  Daniela Gambaro ,  Marco Ravani ,  Michael Ries ,  Laura Sacchetti ,  Robert Standley ,  Robert Falster ,  Mark Stinson

    发明人： Marco Borgini ,  Daniela Gambaro ,  Marco Ravani ,  Michael Ries ,  Laura Sacchetti ,  Robert Standley ,  Robert Falster ,  Mark Stinson

    IPC分类号： C30B11/00

    CPC分类号： H01L21/3225 ,  Y10T117/10

    摘要： A process for nucleating and growing oxygen precipitates in a silicon wafer, including subjecting a wafer having a non-uniform concentration of crystal lattice vacancies with the concentration of vacancies in the bulk layer being greater than the concentration of vacancies in the surface layer to a non-isothermal heat treatment to form of a denuded zone in the surface layer and to cause the formation and stabilization of oxygen precipitates having an effective radial size 0.5 nm to 30 nm in the bulk layer. The process optionally includes subjecting the stabilized wafer to a high temperature thermal process (e.g. epitaxial deposition, rapid thermal oxidation, rapid thermal nitridation and etc.) at temperatures in the range of 1000 OC to 1275 OC without causing the dissolution of the stabilized oxygen precipitates.

    摘要翻译： 一种用于在硅晶片中成核和生长氧沉淀物的方法，包括使具有不均匀浓度的晶格空位的晶片与本体层中的空位浓度大于表层中的空位浓度， 进行等温热处理以形成表面层中的剥离区域，并且使本体层中具有0.5nm至30nm有效径向尺寸的氧沉淀物的形成和稳定化。 该方法任选地包括在1000℃至1275℃范围内的温度下使稳定的晶片经受高温热处理（例如外延沉积，快速热氧化，快速热氮化等），而不会使稳定的氧沉淀物溶解 。

    Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
    2.
    发明授权
    Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor 有权
    理想的氧气沉淀硅晶片和氧气外扩散工艺

    公开(公告)号：US06204152B1

    公开(公告)日：2001-03-20

    申请号：US09340489

    申请日：1999-06-30

    申请人： Robert Falster ,  Marco Cornara ,  Daniela Gambaro ,  Massimiliano Olmo

    发明人： Robert Falster ,  Marco Cornara ,  Daniela Gambaro ,  Massimiliano Olmo

    IPC分类号： H01L21322

    CPC分类号： H01L21/3225 ,  Y10S257/913 ,  Y10T428/21 ,  Y10T428/249969

    摘要： A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, a central plane between the front and back surfaces, and a sink for crystal lattice vacancies at the front surface. In the process, the wafer is subjected to a heat-treatment to form crystal lattice vacancies, the vacancies being formed in the bulk of the silicon. The wafer is then cooled from the temperature of said heat treatment at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the crystal lattice vacancy sink to produce a wafer having a vacancy concentration profile in which the peak density is at or near the central plane with the concentration generally decreasing in the direction of the front surface of the wafer.

    摘要翻译： 一种在随后的热处理步骤中对单晶硅晶片进行热处理以影响晶片中氧的析出行为的方法。 晶片具有前表面，后表面，前表面和后表面之间的中心平面，以及在前表面处用于晶格空位的凹槽。 在该过程中，对晶片进行热处理以形成晶格空位，空位形成在大部分硅中。 然后将晶片从所述热处理的温度以允许一些但不是全部晶格空位扩散到晶格空位宿的速率冷却，以产生具有空位浓度分布的晶片，其中峰值密度 处于或接近中心平面，其浓度通常在晶片前表面的方向上减小。

    Ideal Oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
    3.
    发明授权
    Ideal Oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor 失效
    理想的氧气沉淀硅片及其无氧扩散工艺

    公开(公告)号：US06180220B2

    公开(公告)日：2001-01-30

    申请号：US09030110

    申请日：1998-02-25

    申请人： Robert Falster ,  Marco Cornara ,  Daniela Gambaro ,  Massimiliano Olmo

    发明人： Robert Falster ,  Marco Cornara ,  Daniela Gambaro ,  Massimiliano Olmo

    IPC分类号： B32B300

    CPC分类号： H01L21/3225 ,  Y10S257/913 ,  Y10T428/21 ,  Y10T428/249969

    摘要： A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, the wafer is subjected to a heat-treatment to form crystal lattice vacancies, the vacancies being formed in the bulk of the silicon. The wafer is then cooled from the temperature of said heat treatment at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to produce a wafer having a vacancy concentration profile in which the peak density is at or near the central plane with the concentration generally decreasing in the direction of the front surface of the wafer.

    摘要翻译： 一种在随后的热处理步骤中对单晶硅晶片进行热处理以影响晶片中氧的析出行为的方法。 该晶片具有前表面，后表面和在前表面和后表面之间的中心平面。 在该过程中，对晶片进行热处理以形成晶格空位，空位形成在大部分硅中。 然后将晶片从所述热处理的温度以允许一些但不是全部晶格空位扩散到前表面的速率冷却，以产生具有空位浓度分布的晶片，其中峰密度在 或者靠近中心平面，其浓度通常在晶片前表面的方向上减小。

    Ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile and a process for the preparation thereof
    4.
    发明授权
    Ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile and a process for the preparation thereof 有权
    具有不对称空位浓度分布的理想氧沉淀硅晶片及其制备方法

    公开(公告)号：US06586068B1

    公开(公告)日：2003-07-01

    申请号：US09704893

    申请日：2000-11-02

    申请人： Robert Falster ,  Marco Cornara ,  Daniela Gambaro ,  Massimiliano Olmo

    发明人： Robert Falster ,  Marco Cornara ,  Daniela Gambaro ,  Massimiliano Olmo

    IPC分类号： C03B3306

    CPC分类号： H01L21/3225 ,  Y10S257/913 ,  Y10T428/21 ,  Y10T428/249969

    摘要： A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, the wafer is subjected to a heat-treatment to form crystal lattice vacancies in the wafer. During the heat-treatment, the front and back surfaces of the wafer are each exposed to either a nitriding or non-nitriding gas. The wafer is then cooled from the temperature of said heat treatment at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to produce a wafer having a vacancy concentration profile determined in part by the gas that each surface is exposed to and in part by the cooling rate.

    摘要翻译： 一种在随后的热处理步骤中对单晶硅晶片进行热处理以影响晶片中氧的析出行为的方法。 该晶片具有前表面，后表面和在前表面和后表面之间的中心平面。 在该过程中，对晶片进行热处理以在晶片中形成晶格空位。 在热处理期间，晶片的前表面和后表面均暴露于氮化或非氮化气体中。 然后将晶片从所述热处理的温度以允许一些但不是全部晶格空位扩散到前表面的速率冷却，以产生具有部分由气体确定的空位浓度分布的晶片， 每个表面暴露于部分冷却速率。

    Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
    5.
    发明授权
    Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor 失效
    理想的氧气沉淀硅晶片和氧气外扩散工艺

    公开(公告)号：US5994761A

    公开(公告)日：1999-11-30

    申请号：US806436

    申请日：1997-02-26

    申请人： Robert Falster ,  Marco Cornara ,  Daniela Gambaro ,  Massimiliano Olmo

    发明人： Robert Falster ,  Marco Cornara ,  Daniela Gambaro ,  Massimiliano Olmo

    IPC分类号： C30B29/06 ,  H01L21/26 ,  H01L21/322 ,  H01L29/36

    CPC分类号： H01L21/3225 ,  Y10S257/913 ,  Y10T428/21 ,  Y10T428/249969

    摘要： A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, a central plane between the front and back surfaces, and a sink for crystal lattice vacancies at the front surface. In the process, the wafer is subjected to a heat-treatment to form crystal lattice vacancies, the vacancies being formed in the bulk of the silicon. The wafer is then cooled from the temperature of said heat treatment at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the crystal lattice vacancy sink to produce a wafer having a vacancy concentration profile in which the peak density is at or near the central plane with the concentration generally decreasing in the direction of the front surface of the wafer.

    摘要翻译： 一种在随后的热处理步骤中对单晶硅晶片进行热处理以影响晶片中氧的析出行为的方法。 晶片具有前表面，后表面，前表面和后表面之间的中心平面，以及在前表面处用于晶格空位的凹槽。 在该过程中，对晶片进行热处理以形成晶格空位，空位形成在大部分硅中。 然后将晶片从所述热处理的温度以允许一些但不是全部晶格空位扩散到晶格空位宿的速率冷却，以产生具有空位浓度分布的晶片，其中峰值密度 处于或接近中心平面，其浓度通常在晶片前表面的方向上减小。

    Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor
    8.
    发明授权
    Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor 有权
    理想的氧气沉淀外延硅晶片和氧气外扩散工艺

    公开(公告)号：US06306733B1

    公开(公告)日：2001-10-23

    申请号：US09626635

    申请日：2000-07-27

    申请人： Robert Falster ,  Marco Cornara ,  Daniela Gambaro ,  Massimiliano Olmo

    发明人： Robert Falster ,  Marco Cornara ,  Daniela Gambaro ,  Massimiliano Olmo

    IPC分类号： H01L21322

    CPC分类号： H01L21/3225 ,  Y10S257/913 ,  Y10T428/21 ,  Y10T428/249969

    摘要： A process for preparing an silicon epitaxial wafer. The wafer has a front surface having an epitaxial layer deposited thereon, a back surface, and a bulk region between the front and back surfaces, wherein the bulk region contains a concentration of oxygen precipitates. In the process, a wafer having interstitial oxygen atoms is first subjected to an oxygen precipitation heat treatment to cause the nucleation and growth of oxygen precipitates to a size sufficient to stabilize the oxygen precipitates. An epitaxial layer is then deposited on the surface of the oxygen precipitate stabilized wafer.

    摘要翻译： 一种制备硅外延晶片的方法。 晶片具有在其上沉积有外延层的前表面，后表面和前表面和后表面之间的主体区域，其中主体区域含有氧沉淀物的浓度。 在此过程中，首先对具有间隙氧原子的晶片进行氧沉淀热处理，使氧析出物的成核和生长达到足以稳定氧析出物的尺寸。 然后在氧沉淀稳定晶片的表面上沉积外延层。

    Low defect density silicon
    10.
    发明申请
    Low defect density silicon 审中-公开
    低缺陷密度硅

    公开(公告)号：US20050205000A1

    公开(公告)日：2005-09-22

    申请号：US11131148

    申请日：2005-05-17

    申请人： Robert Falster ,  Joseph Holzer

    发明人： Robert Falster ,  Joseph Holzer

    IPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/14 ,  C30B15/20 ,  C30B15/22 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04 ,  C30B33/00 ,  H01L21/322 ,  H01L21/324

    CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  C30B33/00 ,  H01L21/3225 ,  Y10T117/1004 ,  Y10T428/21

    摘要： The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects, and a process for the preparation thereof. The process comprises controlling growth conditions, such as growth velocity, v, instantaneous axial temperature gradient, G0, and the cooling rate, within a range of temperatures at which silicon self-interstitials are mobile, in order to prevent the formation of these agglomerated defects. In ingot form, the axially symmetric region has a width, as measured from the circumferential edge of the ingot radially toward the central axis, which is at least about 30% the length of the radius of the ingot. The axially symmetric region additionally has a length, as measured along the central axis, which is at least about 20% the length of the constant diameter portion of the ingot.

    摘要翻译： 本发明涉及晶锭或晶片形式的单晶硅，其包含不具有附聚固有点缺陷的轴对称区域及其制备方法。 该方法包括在硅自填隙可移动的温度范围内控制生长条件，例如生长速度，v，瞬时轴向温度梯度，G <0>和冷却速率，按顺序 以防止这些团聚缺陷的形成。 在锭状形式中，轴向对称区域具有从铸块径向向中心轴线的圆周边缘测量的宽度，其至少为铸块半径的大约30％。 轴向对称区域还具有沿着中心轴测量的长度，该长度至少为锭的恒定直径部分的长度的约20％。