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1.发明授权Fabricating method for silicon devices using a two step silicon etching process 失效使用两步硅蚀刻工艺的硅器件的制造方法
公开(公告)号：US5006202A
公开(公告)日：1991-04-09
申请号：US533204
申请日：1990-06-04
IPC分类号： B41J2/16 , B81B1/00 , C23F1/00 , C23F1/02 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/308
CPC分类号： B41J2/1642 , B41J2/1601 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1645 , B81B1/004 , B81C1/00896 , H01L21/30608 , H01L21/3085 , B81B2201/052 , B81C2201/053
摘要： Disclosed is a method of fabricating a precision etched, three dimensional device from a silicon wafer, wherein the etching is done from one side of the wafer using a two step silicon etching process. A two-sided deposition of a robust protective layer, such as polycrystalline silicon, is placed over a two-sided deposition of a chemical masking layer such as silicon dioxide. The two layers are concurrently patterned with first and second sets of vias on one side of the wafer, while the opposite side is protected by the protective layer. The protective layer is removed to permit deposition of a second masking layer such as silicon nitride, followed by deposition of a second protective layer. Again, the second protective layer prevents damage to the fragile second masking layer on the wafer backside while its frontside is patterned with a similar set of vias aligned with the first set of vias in the first masking layer. This similar set of vias is sequentially formed in both the second protective layer and the underlying second masking layers. Then the wafer is placed in an etchant bath so that the first set of recesses is anisotropically etched in the wafer frontside side. Next, the second protective layer and second masking layer are removed to permit anisotropic etching of the second set of recesses through the second set of vias in the first masking layer. If the protective layer is polycrystalline silicon, it is concurrently etch-removed during the initial etching of the silicon wafer.
摘要翻译： 公开了一种从硅晶片制造精密蚀刻的三维器件的方法，其中使用两步硅蚀刻工艺从晶片的一侧进行蚀刻。 坚固的保护层（例如多晶硅）的双面沉积置于诸如二氧化硅的化学掩蔽层的双面沉积上。 两层同时用晶片一侧的第一组和第二组通孔构图，而相对侧被保护层保护。 去除保护层以允许沉积诸如氮化硅的第二掩蔽层，随后沉积第二保护层。 再次，第二保护层防止损坏晶片背面上的脆弱的第二掩蔽层，同时其前侧用与第一掩蔽层中的第一组通孔对准的相似的一组通孔构图。 在第二保护层和下面的第二掩蔽层中顺序地形成这种类似的通孔。 然后将晶片放置在蚀刻剂浴中，使得第一组凹陷在晶片前侧被各向异性地蚀刻。 接下来，去除第二保护层和第二掩蔽层，以允许通过第一掩模层中的第二组通孔对第二组凹陷进行各向异性蚀刻。 如果保护层是多晶硅，则在硅晶片的初始蚀刻期间同时进行蚀刻去除。
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公开(公告)号：US4875968A
公开(公告)日：1989-10-24
申请号：US305046
申请日：1989-02-02
CPC分类号： B41J2/1631 , B41J2/1604 , B41J2/1623 , B41J2/1629 , B41J2/1635
摘要： An improved method of fabricating a thermal ink jet printhead of the type produced by the mating of an anisotropically etched silicon substrate containing ink flow directing recesses with a substrate having heating elements and addressing electrodes is disclosed. An etch resistant material on one surface of a (100) silicon substrate is patterned to form at least two sets of vias therein having predetermined sizes, shapes, and predetermined spacing therebetween. The predetermined spacing permits selected complete undercutting by an anisotropic etchant within a predetermined etching time period. The patterned silicon substrate is anisotropically etched for the predetermined time period to form at least two sets of separate recesses, each recess being separated from each other by a wall, the surfaces of the walls being {111} crystal planes of the silicon substrate, whereby certain predetermined separately etched recesses are selectively placed into communication with each other by the selective undercutting while the remainder of the undercut walls provide strengthening reinforcement to the printhead, so that larger printheads may be fabricated which are more robust without relinquishing resolution or reducing tolerances.
摘要翻译： 公开了一种改进的制造热喷墨打印头的方法，该喷墨打印头是通过将含有墨流动引导凹槽的各向异性蚀刻的硅基底与具有加热元件和寻址电极的基底配合而制造的。 对（100）硅衬底的一个表面上的耐蚀刻材料进行图案化，以形成其中具有预定尺寸，形状和预定间隔的至少两组通孔。 预定间隔允许在预定蚀刻时间段内由各向异性蚀刻剂选择的完全底切。 图案化的硅衬底在预定的时间周期内被各向异性蚀刻以形成至少两组分离的凹槽，每个凹槽彼此被壁分离，壁的表面是硅衬底的{111}晶面，由此 某些预定的单独蚀刻的凹槽通过选择性底切而选择性地彼此连通，而其余的底切壁为打印头提供加强增强，使得可以制造更大的打印头，其更坚固，而不放弃分辨率或减小公差。
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公开(公告)号：US5201987A
公开(公告)日：1993-04-13
申请号：US899597
申请日：1992-06-18
IPC分类号： H01L21/308
CPC分类号： H01L21/3081
摘要： A precision etched, three dimensional device is fabricated from a silicon wafer by etching from one side of the wafer. A chemical masking layer, such as silicon nitride, is first deposited on all sides of the wafer, followed by the deposition of a robust mechanical layer, such as polycrystalline silicon, over the masking layer on all sides of the wafer. The two layers are sequentially patterned on one side of the wafer and then the wafer is placed into an etchant bath which etches the exposed surface of the wafer and concurrently removes the protective layer, leaving a defect-free masking layer that prevents unintentional etching that would reduce yields of fabricated devices.
摘要翻译： 通过从晶片的一侧进行蚀刻从硅晶片制造精密蚀刻的三维器件。 首先在晶片的所有侧面上沉积诸如氮化硅的化学掩蔽层，然后在晶片的所有侧面上的掩模层上沉积坚固的机械层，例如多晶硅。 这两层在晶片的一侧依次构图，然后将晶片放入蚀刻液中，蚀刻晶片的暴露表面并同时去除保护层，留下无缺陷的掩模层，防止无意蚀刻， 降低制造装置的产量。
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公开(公告)号：US5124717A
公开(公告)日：1992-06-23
申请号：US624390
申请日：1990-12-06
CPC分类号： B41J2/1604 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1635 , B41J2/1642 , B41J2002/14403
摘要： An ink jet printhead having an integral membrane filter fabricated over the surface of the printhead containing the ink inlet is disclosed. The individual printheads are obtained by a sectioning operation which cuts aligned and bonded channel and heater wafers. The mated wafers contain a plurality of printheads and must be separated. The integral membrane filter is formed on the channel wafer after it is anisotropically etched incorporating the etch resistant mask layer and prior to mating with the heater wafer. A patternable layer is deposited over the etch resistant masking layer and exposed, patterned and developed to establish the mesh filter. In one embodiment, the side of the channel wafer not patterned and etched is heavily doped to form an etch stop which increases the robustness of the membrane filter by ensuring that the masking layer remains intact during subsequent fabricating steps. This doped region beneath the patternable layer is then etched using the membrane filter as a mask to open the filter pores through the doped layer of the channel wafer, thereby increasing the filter thickness and its overall strength.
摘要翻译： 公开了一种在包含墨水入口的打印头的表面上制造的具有整体膜过滤器的喷墨打印头。 单个打印头通过切割对准和粘合的通道和加热器晶片的切片操作获得。 配对的晶片包含多个打印头，必须分开。 整体膜过滤器在其各向异性蚀刻之后形成在通道晶片上，其包含耐蚀刻掩模层并且在与加热器晶片配合之前。 将可图案层沉积在抗蚀刻掩模层上，并进行曝光，图案化和显影以建立网状过滤器。 在一个实施例中，未图案化和蚀刻的沟道晶片的侧面被重掺杂以形成蚀刻停止件，其通过确保掩模层在随后的制造步骤期间保持完整而增加了膜过滤器的鲁棒性。 然后使用膜过滤器作为掩模蚀刻可图案层下面的该掺杂区域，以通过通道晶片的掺杂层打开过滤器孔，从而增加过滤器厚度及其整体强度。
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5.发明授权
公开(公告)号：US5141596A
公开(公告)日：1992-08-25
申请号：US736996
申请日：1991-07-29
IPC分类号： B41J2/05 , B41J2/16 , H01L21/306
CPC分类号： H01L21/30608 , B41J2/1604 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1635
摘要： An integral filter is fabricated by patterning a layer of etch resistant material on one side of a (100) silicon wafer to produce an array of equally spaced, uniformly sized posts or shapes and doping the exposed surface of the wafer by boron ion implant. The dopant is diffused into the wafer while the array of posts of etch resistant material masks the diffusion under them. The size of the posts or shapes determines the undoped areas of the wafer and, thus, the mesh size of the eventually produced integral filter. The wafer is recoated with a layer of etch resistant material and the other side, which was not doped, is patterned to form a plurality of sets of elongated channel vias and reservoir vias, one reservoir via for each set of channel vias. The wafer is orientation dependently etched for a predetermined time period to produce the sets of channel grooves and reservoir recesses, the recesses having a depth of about 75-85% of the wafer thickness, followed by etching of the wafer in an EDP etchant to finish etching the reservoirs through the wafer. The doped silicon area is not etched, so that an integral filter is produced having an arbitrary pore size determined by the size of the posts or shapes patterned initially prior to the diffused doping step.
摘要翻译： 通过在（100）硅晶片的一侧上图案化耐蚀刻材料层来制造整体滤光器，以产生等间距均匀尺寸的柱或形状的阵列，并通过硼离子注入掺杂晶片的暴露表面。 掺杂剂扩散到晶片中，而抗蚀刻材料的阵列阵列掩盖其下的扩散。 柱或形状的尺寸决定了晶片的未掺杂区域，因此决定了最终产生的积分过滤器的网孔尺寸。 用一层耐蚀刻材料重新涂覆晶片，并且未掺杂的另一侧被图案化以形成多组细长通道通孔和储存器通孔，用于每组通道通孔的一个储存器通孔。 晶片取向依赖地蚀刻预定时间段以产生沟槽和储存器凹槽的组，凹槽具有晶片厚度的约75-85％的深度，随后在EDP蚀刻剂中蚀刻晶片以完成 蚀刻储存器通过晶片。 掺杂的硅区域不被蚀刻，从而产生具有由扩散掺杂步骤之前最初形成图案的柱或尺寸确定的任意孔径的整体过滤器。
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6.发明授权
公开(公告)号：US4985710A
公开(公告)日：1991-01-15
申请号：US442641
申请日：1989-11-29
CPC分类号： B41J2/1623 , B41J2/155 , B41J2/1603 , B41J2/1626 , B41J2/1632 , Y10T156/1052
摘要： A "roofshooter" pagewidth printhead for use in a thermal ink jet printing device is fabricated by forming a plurality of subunits, each being produced by bonding a heater substrate having an architecture including an array of heater elements and an etched ink feed slot to a secondary substrate having a series of spaced feed hole openings to form a combined substrate in which said series of spaced feed hole openings communicates with said ink feed slot, and dicing said combined substrates through said ink feed slot to form a subunit. An array of butted subunits having a length equal to one pagewidth is formed by butting one of said subunits against an adjacent subunit. The array of butted subunits is bonded to a pagewidth support substrate. The secondary substrate provides an integral support structure for maintaining the alignment of the heater plate which, if diced through the feed hole without the secondary substrate, would separate into individual pieces, thereby complicating the alignment and assembly process.
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公开(公告)号：US4899181A
公开(公告)日：1990-02-06
申请号：US303620
申请日：1989-01-30
CPC分类号： B41J2/1642 , B41J2/1604 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1635
摘要： An improved thermal ink jet printhead and method of fabrication thereof is disclosed of the type formed by the mating and bonding of first and second substrates. The first substrate is silicon with {100} crystal plane surfaces and has anisotropically etched in one surface thereof a linear series of separate through recesses and a plurality of parallel, elongated ink channels grooves. The second substrate has a plurality of heating elements and addressing electrodes patterned on one surface thereof. The through recesses serve as a segmented ink reservoir with each segment having an ink inlet, and the elongated ink channel grooves having one end adjacent the segmented reservoir and the opposite end open to serve as ink droplet emitting nozzles. Each segment of the segmented reservoir is isolated from each other by dividing walls. The dividing walls strengthen the printhead, and the separate through recesses reduce the effects of angular misalignment between mask and first substrate crystal planes. In the preferred embodiment, a thick film insulative layer is sandwiched between the first and second substrates and patterned to form recesses therein to provide the means for placing the segmented reservoir into communication with the ink channel grooves. To produce a multicolor printing printhead, the thick film layer is patterned to form a linear series of recesses, each substantially equal in length to an associated one of the reservoir segments, so that each reservoir segment may have a different colored ink supplied thereto that cannot mix with the ink of the other reservoir segments.
摘要翻译： 公开了一种改进的热喷墨打印头及其制造方法，其通过第一和第二基板的配合和结合而形成。 第一衬底是具有{100}晶面表面的硅，并且在其一个表面中具有各向异性蚀刻线性系列的分离的通孔和多个平行的细长的墨水槽。 第二基板具有在其一个表面上图案化的多个加热元件和寻址电极。 贯通凹部用作分段墨水储存器，每个分段具有墨水入口，并且细长的墨水通道凹槽具有与分段的储存器相邻的一端，并且相对的端部打开以用作墨滴喷射。 分段储存器的每个段通过分隔壁彼此隔离。 分隔壁加强了打印头，并且单独的通孔减少了掩模和第一基板晶体平面之间的角度偏移的影响。 在优选实施例中，厚膜绝缘层被夹在第一和第二基板之间并被图案化以在其中形成凹槽，以提供用于将分段的储存器放置成与墨水通道槽连通的装置。 为了生产多色打印打印头，将厚膜层图案化以形成线性系列的凹槽，每个凹槽的长度与相关联的储存器段之间的长度基本上相等，使得每个储存器段可以具有供给其的不同颜色的墨水，不能 与其他水库段的油墨混合。
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公开(公告)号：US4822755A
公开(公告)日：1989-04-18
申请号：US185600
申请日：1988-04-25
IPC分类号： H01L21/302 , B41J2/16 , H01L21/301 , H01L21/306 , H01L29/06 , H01L21/00 , H01L21/02 , H01L21/72 , H01L21/98
CPC分类号： B41J2/1628 , B41J2/1601 , B41J2/1623 , B41J2/1629 , B41J2/1642 , H01L21/30604 , B41J2202/13 , H01L29/0657 , Y10S438/928
摘要： A method for separating chips formed on a silicon substrate is provided which uses a combination of reactive ion etching techniques combined with orientation etching to yield integrated chips having edges which can be more precisely butted together to form large area arrays.
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公开(公告)号：USRE32572E
公开(公告)日：1988-01-05
申请号：US947020
申请日：1986-12-29
IPC分类号： B41J2/16
CPC分类号： B41J2/1623 , B41J2/1604 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1635 , B41J2/1642
摘要： Several fabricating processes for ink jet printheads are disclosed, each printhead being composed of two parts aligned and bonded together. One part is a substantially flat substrate which contains on the surface thereof a lineal array of heating elements and addressing electrodes, and the second part is a substrate having at least one recess anisotropically etched therein to serve as an ink supply manifold when the two parts are bonded together. A lineal array of parallel grooves are formed in the second part, so that one end of the grooves communicate with the manifold recess an the other ends are open for use as an ink droplet expelling nozzles. Many printheads can be made simultaneously by producing a plurality of sets of heating elements array with their addressing electrodes on a silicon wafer and by placing alignment marks thereon at predetermined locations. A corresponding plurality of sets of channels and associated manifolds are produced in a second silicon wafer and, in one embodiment, alignment openings are etched thereon at predetermined locations. The two wafers are aligned via the alignment openings and alignment marks, then bonded together and diced into many separate printheads. A number of printheads can be fixedly mounted in a pagewidth configuration which confronts a moving recording medium for pagewidth printing or individual printheads may be adapted for carriage type ink jet printing.
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10.发明授权
公开(公告)号：US5030971A
公开(公告)日：1991-07-09
申请号：US442574
申请日：1989-11-29
CPC分类号： B41J2/2103 , B41J2/14072 , B41J2/14129 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1642
摘要： A multi-color roofshooter type thermal ink jet printhead includes a common heater substrate having at least two arrays of heating elements and a corresponding number of elongated feed slots, each heater array being located adjacent its corresponding feed slot. A common channel substrate is layered above a heater substrate and includes arrays of nozzles corresponding in number to the arrays of heating elements, each nozzle array communicating with one of the feed slots on the heater substrate. Each nozzle array is isolated from an adjacent nozzle array and each nozzle of each nozzle array is aligned above a respective heating element of a corresponding heater array. Each of the heater arrays is individually addressed and driven by switching circuitry located on the heater substrate adjacent to its corresponding heater array. The switching circuitry can be active driver matrices corresponding in number to the arrays of heating elements. The locations of the driver matrices preferably alternate with locations of the feed slots. With this construction, multi-color printheads can be efficiently arranged on a single wafer, so that silicon real estate is conserved. The switching circuitry can also be used to address an array of heating elements in a mono-color thermal inkjet printhead. In a preferred embodiment, inputs of the switching circuitry extend from sides of the switching circuitry whereby distances between adjacent feed slots are minimized.
摘要翻译： 多色屋顶拍摄型热喷墨打印头包括具有至少两个加热元件阵列和相应数量的细长进给槽的公共加热器基板，每个加热器阵列位于其相应的进料槽附近。 公共通道基板层叠在加热器基板的上方，并且包括与加热元件阵列相对应的喷嘴阵列，每个喷嘴阵列与加热器基板上的一个进料槽连通。 每个喷嘴阵列与相邻的喷嘴阵列隔离，并且每个喷嘴阵列的每个喷嘴对准在相应加热器阵列的相应加热元件的上方。 每个加热器阵列由位于加热器基板上的与其对应的加热器阵列相邻的切换电路单独寻址和驱动。 开关电路可以是与加热元件阵列相对应的有源驱动器矩阵。 驱动器矩阵的位置优选地与馈送槽的位置交替。 利用这种结构，可以将多色打印头有效地布置在单个晶片上，从而保持硅的空间。 开关电路还可用于解决单色热喷墨打印头中的加热元件阵列。 在优选实施例中，开关电路的输入从开关电路的侧面延伸，从而相邻进料槽之间的距离最小化。
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