摘要:
An electroluminescent display includes a transparent electrode (4) and a metal assist structure (6) formed over a portion of the transparent electrode (6) such that the metal assist structure (6) is in electrical contact with the transparent electrode (4). The metal assist structure (6) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12). The first and second refractory metal layers (10, 14) are capable of protecting the primary conductor layer (12) from oxidation when the electroluminescent display is annealed to activate a phosphor layer (18). In an alternate embodiment, an electroluminescent display includes a substrate (2) and a metal electrode (22) formed on the substrate (2). The metal electrode (22) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12).
摘要:
An electroluminescent display includes a transparent electrode (4) and a metal assist structure (6) formed over a portion of the transparent electrode (6) such that the metal assist structure (6) is in electrical contact with the transparent electrode (4). The metal assist structure (6) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12). The first and second refractory metal layers (10, 14) are capable of protecting the primary conductor layer (12) from oxidation when the electroluminescent display is annealed to activate a phosphor layer (18). In an alternate embodiment, an electroluminescent display includes a substrate (2) and a metal electrode (22) formed on the substrate (2). The metal electrode (22) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12).
摘要:
A simplified heterostructure charge transport device has a GaAs transport layer that is the top layer of the device, deposited on an (Al,Ga) As barrier layer for vertical confinement of charge packets. Confinement at the top surface is provided by pinning of the conduction band surface states.
摘要:
A novel heterostructure acoustic charge transport (HACT) device is disclosed having an optimized charge density. The device includes a transducer fabricated on a substrate structure that launches surface acoustic waves. A reflector is formed in the substrate structure at an end portion adjacent to the transducer for reflecting the surface acoustic Waves. Also included is an electrode configured with the transport channel at an end thereof distal to the transducer for generating electrical signal equivalents of the propagating electrode charge. During fabrication, the resistivity of the layers initially configured at a lower than desired value. The layer is subsequently etched to raise the resistivity to the desired value.
摘要:
A heterostructure acoustic charge transport (HACT) device having a number of signal tap electrodes has revealed unexpected insensitivity to electrode spacing and unexpected sensitivity to electrode width. Spacing of one SAW wavelength between consecutive electrodes and an electrode width of .lambda./20 are preferred.
摘要:
An acoustic charge transport device having a number of signal tap electrodes has revealed unexpected insensitivity to electrode spacing and unexpected sensitivity to electrode width. Spacing of one-half SAW wavelength between consecutive electrodes and an electrode width of .lambda./20 are preferred for low frequency response.
摘要:
A novel surface acoustic wave (SAW) element for use in a stabilized oscillator circuit capable of coupling directly to external circuitry includes a pair of opposed transducers formed on a surface of a piezoelectric crystal for launching surface acoustic waves into a resonant cavity formed by opposed reflectors on the crystal surface. The element is characterized by a supplemental transducer coupled to the cavity for directly providing external circuitry with signals corresponding to the resonant surface acoustic waves.
摘要:
Preferred reflective surface wave processors employ cooperating serially disposed reflector sections. At least one reflecting section comprises an array of non-segmented reflecting grooves in which certain grooves are omitted to form a withdrawal array. Cooperatively coupled to this non-segmented array is an array of segmented grooves. The elements of the segmented array may be made up of progressively fewer segments in regularly spaced lines. The segments in any one segmented line may selectively be of equal lengths randomly spaced within a given line.
摘要:
An improved acoustic charge transport device having an acoustic wave passing through a piezoelectric semiconductor is improved by utilizing heterostructure Quantum-wells for confining charge packets.
摘要:
A method of manufacturing surface acoustic wave devices includes providing a dielectric substrate with a plurality of channels which open onto a substrate surface region and each of which accommodates a metallic electrode, the electrodes being recessed below the substrate surface region by an actual distance which at least equals a desired distance at which the electrodes have a minimum acoustic reflectivity, testing the performance of the device to ascertain at least the acoustic reflectivity of the electrodes, and etching at least the dielectric substrate, when it is ascertained during the testing that the acoustic electrode reflectivity is excessive, at least at the substrate surface region to a predetermined etching depth. The use of this method results in a device having reduced post-etching acoustic electrode reflectivity as a result of the thus obtained reduction in the difference between the actual and desired distances.