Low resistance, thermally stable electrode structure for
electroluminescent displays
    1.
    发明授权
    Low resistance, thermally stable electrode structure for electroluminescent displays 失效
    用于电致发光显示器的低电阻,热稳定的电极结构

    公开(公告)号:US5445711A

    公开(公告)日:1995-08-29

    申请号:US250969

    申请日:1994-05-31

    CPC分类号: H05B33/28

    摘要: An electroluminescent display includes a transparent electrode (4) and a metal assist structure (6) formed over a portion of the transparent electrode (6) such that the metal assist structure (6) is in electrical contact with the transparent electrode (4). The metal assist structure (6) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12). The first and second refractory metal layers (10, 14) are capable of protecting the primary conductor layer (12) from oxidation when the electroluminescent display is annealed to activate a phosphor layer (18). In an alternate embodiment, an electroluminescent display includes a substrate (2) and a metal electrode (22) formed on the substrate (2). The metal electrode (22) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12).

    摘要翻译: 电致发光显示器包括在透明电极(6)的一部分上形成的透明电极(4)和金属辅助结构(6),使得金属辅助结构(6)与透明电极(4)电接触。 金属辅助结构(6)包括第一耐火金属层(10),形成在第一耐火金属层(10)上的主导体层(12)和形成在主导体层上的第二难熔金属层(14) (12)。 当电致发光显示器被退火以激活磷光体层(18)时,第一和第二难熔金属层(10,14)能够保护主导体层(12)不被氧化。 在替代实施例中,电致发光显示器包括基板(2)和形成在基板(2)上的金属电极(22)。 金属电极(22)包括形成在第一难熔金属层(10)上的第一耐火金属层(10),主导体层(12)和形成在主导体层(10)上的第二耐火金属层(14) 12)。

    Low resistance, thermally stable electrode structure for
electroluminescent displays

    公开(公告)号:US5559399A

    公开(公告)日:1996-09-24

    申请号:US897201

    申请日:1992-06-11

    CPC分类号: H05B33/28

    摘要: An electroluminescent display includes a transparent electrode (4) and a metal assist structure (6) formed over a portion of the transparent electrode (6) such that the metal assist structure (6) is in electrical contact with the transparent electrode (4). The metal assist structure (6) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12). The first and second refractory metal layers (10, 14) are capable of protecting the primary conductor layer (12) from oxidation when the electroluminescent display is annealed to activate a phosphor layer (18). In an alternate embodiment, an electroluminescent display includes a substrate (2) and a metal electrode (22) formed on the substrate (2). The metal electrode (22) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12).

    Method and apparatus for selecting the resistivity of epitaxial layers
in III-V devices
    4.
    发明授权
    Method and apparatus for selecting the resistivity of epitaxial layers in III-V devices 失效
    用于选择III-V器件中外延层电阻率的方法和装置

    公开(公告)号:US5320977A

    公开(公告)日:1994-06-14

    申请号:US821239

    申请日:1992-01-10

    IPC分类号: H03H9/02 H01G7/00

    CPC分类号: H03H9/02976 Y10S438/934

    摘要: A novel heterostructure acoustic charge transport (HACT) device is disclosed having an optimized charge density. The device includes a transducer fabricated on a substrate structure that launches surface acoustic waves. A reflector is formed in the substrate structure at an end portion adjacent to the transducer for reflecting the surface acoustic Waves. Also included is an electrode configured with the transport channel at an end thereof distal to the transducer for generating electrical signal equivalents of the propagating electrode charge. During fabrication, the resistivity of the layers initially configured at a lower than desired value. The layer is subsequently etched to raise the resistivity to the desired value.

    摘要翻译: 公开了具有优化的电荷密度的新颖的异质结构声电荷传输(HACT)器件。 该装置包括在发射表面声波的基板结构上制造的换能器。 反射器在基板结构中在与换能器相邻的端部处形成,用于反射表面声波。 还包括一个电极,其配置有在传感器远端的一端的传输通道,用于产生传播电极电荷的电信号。 在制造期间,最初配置在低于期望值的层的电阻率。 随后蚀刻该层以将电阻率提高到所需值。

    HACT electrode configuration
    5.
    发明授权
    HACT electrode configuration 失效
    HACT电极配置

    公开(公告)号:US5159299A

    公开(公告)日:1992-10-27

    申请号:US591653

    申请日:1990-10-02

    IPC分类号: H03H9/02

    CPC分类号: H03H9/02976

    摘要: A heterostructure acoustic charge transport (HACT) device having a number of signal tap electrodes has revealed unexpected insensitivity to electrode spacing and unexpected sensitivity to electrode width. Spacing of one SAW wavelength between consecutive electrodes and an electrode width of .lambda./20 are preferred.

    摘要翻译: 具有多个信号抽头电极的异质结构声电荷传输(HACT)器件已经显示出对电极间隔的意外不敏感性和对电极宽度的意想不到的敏感性。 在连续电极之间的一个SAW波长的间隔和λ/ 20的电极宽度是优选的。

    Energy coupler for a surface acoustic wave (SAW) resonator
    7.
    发明授权
    Energy coupler for a surface acoustic wave (SAW) resonator 失效
    表面声波(SAW)谐振器的能量耦合器

    公开(公告)号:US5214338A

    公开(公告)日:1993-05-25

    申请号:US438667

    申请日:1989-11-17

    申请人: William J. Tanski

    发明人: William J. Tanski

    IPC分类号: H03B5/32 H03H9/25

    CPC分类号: H03H9/25 H03B5/326

    摘要: A novel surface acoustic wave (SAW) element for use in a stabilized oscillator circuit capable of coupling directly to external circuitry includes a pair of opposed transducers formed on a surface of a piezoelectric crystal for launching surface acoustic waves into a resonant cavity formed by opposed reflectors on the crystal surface. The element is characterized by a supplemental transducer coupled to the cavity for directly providing external circuitry with signals corresponding to the resonant surface acoustic waves.

    摘要翻译: 用于能够直接耦合到外部电路的稳定振荡器电路中的新型表面声波(SAW)元件包括形成在压电晶体表面上的一对相对的换能器,用于将表面声波发射到由相对的反射器形成的谐振腔中 在水晶面上。 元件的特征在于耦合到空腔的补充换能器,用于直接向外部电路提供与谐振表面声波相对应的信号。

    Surface acoustic wave reflectors with weighted arrays of segmented and
non-segmented lineal elements
    8.
    发明授权
    Surface acoustic wave reflectors with weighted arrays of segmented and non-segmented lineal elements 失效
    具有分段和非分段线性元素的加权阵列的表面声波反射器

    公开(公告)号:US4267534A

    公开(公告)日:1981-05-12

    申请号:US152463

    申请日:1980-05-23

    申请人: William J. Tanski

    发明人: William J. Tanski

    IPC分类号: H03H9/02 H03H9/64 H03H9/68

    CPC分类号: H03H9/6493 H03H9/02771

    摘要: Preferred reflective surface wave processors employ cooperating serially disposed reflector sections. At least one reflecting section comprises an array of non-segmented reflecting grooves in which certain grooves are omitted to form a withdrawal array. Cooperatively coupled to this non-segmented array is an array of segmented grooves. The elements of the segmented array may be made up of progressively fewer segments in regularly spaced lines. The segments in any one segmented line may selectively be of equal lengths randomly spaced within a given line.

    摘要翻译: 优选的反射表面波处理器采用配合的串联布置的反射器部分。 至少一个反射部分包括非分段反射槽的阵列,其中省略了某些凹槽以形成取出阵列。 与该非分段阵列协同耦合是分段凹槽的阵列。 分段阵列的元素可以由规则间隔的线中逐渐减少的段组成。 任何一个分段行中的段可以选择性地具有在给定行内随机间隔的相等长度。

    Method of manufacturing saw devices
    10.
    发明授权
    Method of manufacturing saw devices 失效
    制造锯装置的方法

    公开(公告)号:US4890369A

    公开(公告)日:1990-01-02

    申请号:US263933

    申请日:1988-10-28

    申请人: William J. Tanski

    发明人: William J. Tanski

    IPC分类号: H03H3/08 H01L41/24 H03H9/145

    摘要: A method of manufacturing surface acoustic wave devices includes providing a dielectric substrate with a plurality of channels which open onto a substrate surface region and each of which accommodates a metallic electrode, the electrodes being recessed below the substrate surface region by an actual distance which at least equals a desired distance at which the electrodes have a minimum acoustic reflectivity, testing the performance of the device to ascertain at least the acoustic reflectivity of the electrodes, and etching at least the dielectric substrate, when it is ascertained during the testing that the acoustic electrode reflectivity is excessive, at least at the substrate surface region to a predetermined etching depth. The use of this method results in a device having reduced post-etching acoustic electrode reflectivity as a result of the thus obtained reduction in the difference between the actual and desired distances.