Honey coated roasted nut product and method for making same
    1.
    发明授权
    Honey coated roasted nut product and method for making same 失效
    蜂蜜涂层烤螺母产品及其制作方法

    公开(公告)号:US4161545A

    公开(公告)日:1979-07-17

    申请号:US906663

    申请日:1978-05-16

    IPC分类号: A23L25/00 A23L1/36

    CPC分类号: A23L25/25

    摘要: There is disclosed a honey coated roasted nut product which is prepared by first coating raw nuts with a mixture of honey and water. The honey coated nuts are then enrobed with a dry mixture of sugar and starch and the nuts are then roasted. After cooling, the nuts may be salted.

    摘要翻译: 公开了一种蜂蜜涂覆的烤螺母产品,其通过首先用蜂蜜和水的混合物涂覆生坚果来制备。 然后将蜂蜜涂层的坚果用糖和淀粉的干燥混合物包裹,然后将坚果烤。 冷却后,坚果可能会被盐化。

    TEMPERATURE CONTROL DEVICE FOR OPTOELECTRONIC DEVICES
    2.
    发明申请
    TEMPERATURE CONTROL DEVICE FOR OPTOELECTRONIC DEVICES 有权
    光电装置温度控制装置

    公开(公告)号:US20120125916A1

    公开(公告)日:2012-05-24

    申请号:US13363995

    申请日:2012-02-01

    IPC分类号: H05B6/02 H01L21/329 H01L29/66

    摘要: Current may be passed through an n-doped semiconductor region, a recessed metal semiconductor alloy portion, and a p-doped semiconductor region so that the diffusion of majority charge carriers in the doped semiconductor regions transfers heat from or into the semiconductor waveguide through Peltier-Seebeck effect. Further, a temperature control device may be configured to include a metal semiconductor alloy region located in proximity to an optoelectronic device, a first semiconductor region having a p-type doping, and a second semiconductor region having an n-type doping. The temperature of the optoelectronic device may thus be controlled to stabilize the performance of the optoelectronic device.

    摘要翻译: 电流可以通过n掺杂半导体区域,凹陷金属半导体合金部分和p掺杂半导体区域,使得掺杂半导体区域中的多数电荷载流子的扩散通过Peltier- 塞贝克效应。 此外,温度控制装置可以被配置为包括位于光电子器件附近的金属半导体合金区域,具有p型掺杂的第一半导体区域和具有n型掺杂的第二半导体区域。 因此可以控制光电子器件的温度以稳定光电器件的性能。

    SUSPENDED GERMANIUM PHOTODETECTOR FOR SILICON WAVEGUIDE
    3.
    发明申请
    SUSPENDED GERMANIUM PHOTODETECTOR FOR SILICON WAVEGUIDE 有权
    用于硅波长的停止的德国光电转换器

    公开(公告)号:US20110143482A1

    公开(公告)日:2011-06-16

    申请号:US13005821

    申请日:2011-01-13

    IPC分类号: H01L31/18

    摘要: A vertical stack of a first silicon germanium alloy layer, a second epitaxial silicon layer, a second silicon germanium layer, and a germanium layer are formed epitaxially on a top surface of a first epitaxial silicon layer. The second epitaxial silicon layer, the second silicon germanium layer, and the germanium layer are patterned and encapsulated by a dielectric cap portion, a dielectric spacer, and the first silicon germanium layer. The silicon germanium layer is removed between the first and second silicon layers to form a silicon germanium mesa structure that structurally support an overhanging structure comprising a stack of a silicon portion, a silicon germanium alloy portion, a germanium photodetector, and a dielectric cap portion. The germanium photodetector is suspended by the silicon germanium mesa structure and does not abut a silicon waveguide. Germanium diffusion into the silicon waveguide and defect density in the germanium detector are minimized.

    摘要翻译: 在第一外延硅层的顶表面上外延地形成第一硅锗合金层,第二外延硅层,第二硅锗层和锗层的垂直叠层。 第二外延硅层,第二硅锗层和锗层通过介电盖部分,电介质间隔物和第一硅锗层被图案化和封装。 在第一和第二硅层之间去除硅锗层以形成硅锗台面结构,其结构上支撑包括硅部分,硅锗合金部分,锗光电检测器和介电帽部分的叠层的悬垂结构。 锗光电探测器由硅锗台面结构悬挂而不邻接硅波导。 锗扩散到硅波导和锗检测器中的缺陷密度被最小化。

    Latch for escape door
    4.
    发明授权
    Latch for escape door 失效
    锁门为逃生门

    公开(公告)号:US4202572A

    公开(公告)日:1980-05-13

    申请号:US898815

    申请日:1978-04-24

    申请人: William M. Green

    发明人: William M. Green

    IPC分类号: E05B15/00 E05C7/00

    摘要: A latch particularly adapted to releasably secure an escape door has a rotating catch pivotally connected to a toggle joint link mechanism having an actuating arm and a stop means associated therewith. When the catch is in closed position, the link mechanism is located on the stop means side of its longitudinal axis and force in an opening direction on the catch is resisted by the stop means. The catch is released by pushing the actuating arm to thereby shift the link mechanism to the other side of its longitudinal axis where the link mechanism has sufficient movement to allow the catch to rotatably release.

    摘要翻译: 特别适于可释放地固定逃生门的闩锁具有枢转地连接到具有致动臂和与其相关联的止动装置的肘节连接机构的旋转卡爪。 当卡扣处于关闭位置时,连杆机构位于其纵向轴线的止动装置侧,并且止动装置抵抗卡盘上的打开方向的力。 通过推动致动臂来释放卡扣,从而将连杆机构移动到其纵向轴线的另一侧,其中连杆机构具有足够的运动以允许卡盘可旋转地释放。

    Electro-optic modulator
    5.
    发明授权
    Electro-optic modulator 有权
    电光调制器

    公开(公告)号:US09042684B2

    公开(公告)日:2015-05-26

    申请号:US13603971

    申请日:2012-09-05

    IPC分类号: G02F1/035 G02F1/01

    CPC分类号: G02F1/0356 G02F1/0121

    摘要: An electro-optical modulator device includes an optical signal path partially defined by a waveguide portion, a radio frequency (RF) signal path partially defined by a conductive line portion, an interaction region where an RF signal propagating in the RF signal path interacts with an optical signal propagating in the optical signal path to modulate the optical signal, and a first tuning portion arranged proximate to the conductive line portion, the first tuning portion including a conductive portion and a switch portion operative to connect the conductive portion to ground.

    摘要翻译: 电光调制器装置包括由波导部分部分地限定的光信号路径,由导线部分限定的射频(RF)信号路径,在RF信号路径中传播的RF信号与一个 光信号在光信号路径中传播以调制光信号,以及布置在导线部分附近的第一调谐部分,第一调谐部分包括导电部分和可操作地将导电部分连接到地的开关部分。

    Double layer interleaved p-n diode modulator
    6.
    发明授权
    Double layer interleaved p-n diode modulator 有权
    双层交错p-n二极管调制器

    公开(公告)号:US08889447B2

    公开(公告)日:2014-11-18

    申请号:US13529360

    申请日:2012-06-21

    IPC分类号: H01L21/00

    摘要: A method for fabricating an optical modulator includes forming n-type layer, a first oxide portion on a portion of the n-type layer, and a second oxide portion on a second portion of the n-type layer, patterning a first masking layer over the first oxide portion, portions of a planar surface of the n-type layer, and portions of the second oxide portion, implanting p-type dopants in the n-type layer to form a first p-type region and a second p-type region, removing the first masking layer, patterning a second masking layer over the first oxide portion, a portion of the first p-type region, and a portion of the n-type layer, and implanting p-type dopants in exposed portions of the n-type layer, exposed portions of the first p-type region, and regions of the n-type layer and the second p-type region disposed between the substrate and the second oxide portion.

    摘要翻译: 一种光学调制器的制造方法包括在n型层的一部分上形成n型层,第一氧化物部分和n型层的第二部分上的第二氧化物部分,将第一掩模层图案化 第一氧化物部分,n型层的平面表面的部分和第二氧化物部分的部分,在n型层中注入p型掺杂剂以形成第一p型区和第二p型 去除所述第一掩蔽层,在所述第一氧化物部分上形成第二掩模层,所述第一p型区域的一部分和所述n型层的一部分,以及在所述第一掩模层的暴露部分中注入p型掺杂剂 n型层,第一p型区域的露出部分以及设置在基板和第二氧化物部分之间的n型层和第二p型区域的区域。

    Double Layer Interleaved P-N Diode Modulator
    7.
    发明申请
    Double Layer Interleaved P-N Diode Modulator 有权
    双层交错P-N二极管调制器

    公开(公告)号:US20130344634A1

    公开(公告)日:2013-12-26

    申请号:US13529360

    申请日:2012-06-21

    IPC分类号: H01L33/02

    摘要: A method for fabricating an optical modulator includes forming n-type layer, a first oxide portion on a portion of the n-type layer, and a second oxide portion on a second portion of the n-type layer, patterning a first masking layer over the first oxide portion, portions of a planar surface of the n-type layer, and portions of the second oxide portion, implanting p-type dopants in the n-type layer to form a first p-type region and a second p-type region, removing the first masking layer, patterning a second masking layer over the first oxide portion, a portion of the first p-type region, and a portion of the n-type layer, and implanting p-type dopants in exposed portions of the n-type layer, exposed portions of the first p-type region, and regions of the n-type layer and the second p-type region disposed between the substrate and the second oxide portion.

    摘要翻译: 一种光学调制器的制造方法包括在n型层的一部分上形成n型层,第一氧化物部分和n型层的第二部分上的第二氧化物部分,将第一掩模层图案化 第一氧化物部分,n型层的平面表面的部分和第二氧化物部分的部分,在n型层中注入p型掺杂剂以形成第一p型区和第二p型 去除所述第一掩蔽层,在所述第一氧化物部分上形成第二掩模层,所述第一p型区域的一部分和所述n型层的一部分,以及在所述第一掩模层的暴露部分中注入p型掺杂剂 n型层,第一p型区域的露出部分以及设置在基板和第二氧化物部分之间的n型层和第二p型区域的区域。

    Method and apparatus for implementing optical deflection switching using coupled resonators
    10.
    发明授权
    Method and apparatus for implementing optical deflection switching using coupled resonators 有权
    使用耦合谐振器实现光偏转开关的方法和装置

    公开(公告)号:US08139904B2

    公开(公告)日:2012-03-20

    申请号:US11856838

    申请日:2007-09-18

    IPC分类号: G02F1/295 G02B6/26 G02B6/42

    CPC分类号: G02B6/1225 G02B6/3596

    摘要: A method of implementing optical deflection switching includes directing a tuning operation at a specific region of coupled optical resonators coupled to an input port, a first output port and a second output port, the coupled optical resonator including a plurality of cascaded unit cells; wherein the tuning operation interrupts a resonant coupling between one or more of the unit cells of the coupled resonators so as to cause an input optical signal from the input port to be directed from the first output port to the second output port.

    摘要翻译: 一种实现光偏转切换的方法包括:在耦合到输入端口,第一输出端口和第二输出端口的耦合光谐振器的特定区域处引导调谐操作,所述耦合光谐振器包括多个级联单元; 其中所述调谐操作中断所述耦合谐振器的一个或多个单位电池之间的谐振耦合,以便使来自所述输入端口的输入光信号从所述第一输出端口引导到所述第二输出端口。