公开(公告)号：US20210351131A1

公开(公告)日：2021-11-11

申请号：US17380033

申请日：2021-07-20

Applicant: Winbond Electronics Corp.

Inventor： Chia-Jung Chuang ,  Isao Tanaka ,  Yung-Wen Hung ,  Chao-Yi Huang

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/108 ,  G03F7/20 ,  H01L21/762 ,  H01L49/02

Abstract: A memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.

公开(公告)号：US11854972B2

公开(公告)日：2023-12-26

申请号：US17380033

申请日：2021-07-20

Applicant: Winbond Electronics Corp.

Inventor： Chia-Jung Chuang ,  Isao Tanaka ,  Yung-Wen Hung ,  Chao-Yi Huang

IPC: H01L23/528 ,  H01L23/522 ,  G03F7/00 ,  H01L21/762 ,  H01L49/02 ,  H10B12/00

CPC classification number: H01L23/5283 ,  G03F7/7015 ,  H01L21/76224 ,  H01L23/5226 ,  H01L28/60 ,  H10B12/053 ,  H10B12/31 ,  H10B12/34 ,  H10B12/482 ,  H10B12/485 ,  H10B12/488

Abstract: A memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.

公开(公告)号：US20210082813A1

公开(公告)日：2021-03-18

申请号：US16571196

申请日：2019-09-16

Applicant: Winbond Electronics Corp.

Inventor： Chia-Jung Chuang ,  Isao Tanaka ,  Yung-Wen Hung ,  Chao-Yi Huang

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/108 ,  H01L21/762 ,  H01L49/02 ,  G03F7/20

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.

公开(公告)号：US11114380B2

公开(公告)日：2021-09-07

申请号：US16571196

申请日：2019-09-16

Applicant: Winbond Electronics Corp.

Inventor： Chia-Jung Chuang ,  Isao Tanaka ,  Yung-Wen Hung ,  Chao-Yi Huang

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/108 ,  G03F7/20 ,  H01L21/762 ,  H01L49/02

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.