公开(公告)号：US20230375914A1

公开(公告)日：2023-11-23

申请号：US17750408

申请日：2022-05-23

Applicant: Winbond Electronics Corp.

Inventor： Kazuhiro Segawa ,  Isao Tanaka

IPC: G03F1/42 ,  G03F1/36

CPC classification number: G03F1/42 ,  G03F1/36

Abstract: A semiconductor manufacturing apparatus and a semiconductor manufacturing method thereof are provided. Wafers are grouped into a first wafer group and a second wafer group according to alignment mark position errors of the wafers and a first threshold value. The alignment mark position errors of the first wafer group are greater than the first threshold value, and the alignment mark position errors of the second wafer group are less than or equal to the first threshold value. A feedforward position correction value is calculated according to a difference between the alignment mark position errors of the first wafer group and a reference error value. A lithography process is performed on the wafers according to the feedforward position correction value.

公开(公告)号：US20210351131A1

公开(公告)日：2021-11-11

申请号：US17380033

申请日：2021-07-20

Applicant: Winbond Electronics Corp.

Inventor： Chia-Jung Chuang ,  Isao Tanaka ,  Yung-Wen Hung ,  Chao-Yi Huang

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/108 ,  G03F7/20 ,  H01L21/762 ,  H01L49/02

Abstract: A memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.

公开(公告)号：US11114380B2

公开(公告)日：2021-09-07

申请号：US16571196

申请日：2019-09-16

Applicant: Winbond Electronics Corp.

Inventor： Chia-Jung Chuang ,  Isao Tanaka ,  Yung-Wen Hung ,  Chao-Yi Huang

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/108 ,  G03F7/20 ,  H01L21/762 ,  H01L49/02

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.

公开(公告)号：US11854972B2

公开(公告)日：2023-12-26

申请号：US17380033

申请日：2021-07-20

Applicant: Winbond Electronics Corp.

Inventor： Chia-Jung Chuang ,  Isao Tanaka ,  Yung-Wen Hung ,  Chao-Yi Huang

IPC: H01L23/528 ,  H01L23/522 ,  G03F7/00 ,  H01L21/762 ,  H01L49/02 ,  H10B12/00

CPC classification number: H01L23/5283 ,  G03F7/7015 ,  H01L21/76224 ,  H01L23/5226 ,  H01L28/60 ,  H10B12/053 ,  H10B12/31 ,  H10B12/34 ,  H10B12/482 ,  H10B12/485 ,  H10B12/488

Abstract: A memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.

公开(公告)号：US20210082813A1

公开(公告)日：2021-03-18

申请号：US16571196

申请日：2019-09-16

Applicant: Winbond Electronics Corp.

Inventor： Chia-Jung Chuang ,  Isao Tanaka ,  Yung-Wen Hung ,  Chao-Yi Huang

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/108 ,  H01L21/762 ,  H01L49/02 ,  G03F7/20

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.