公开(公告)号：US20240387175A1

公开(公告)日：2024-11-21

申请号：US18628824

申请日：2024-04-08

Applicant: Winbond Electronics Corp.

Inventor： Chungchen Hsu ,  Tsung-Wei Lin ,  Kun-Che Wu

IPC: H01L21/033 ,  H01L21/3213

Abstract: A semiconductor structure includes a substrate and a target pattern. The target pattern is disposed on the substrate. The top-view pattern of the target pattern includes a main portion and a protruding portion. The main portion and the protruding portion are connected with each other along the long axis of the top-view pattern of the target pattern. The protruding portion is connected to the main portion. The protruding portion includes a first portion located on one side of the long axis. The maximum width of the first portion perpendicular to the long axis is less than half of the maximum width of the main portion.

公开(公告)号：US20240297047A1

公开(公告)日：2024-09-05

申请号：US18592416

申请日：2024-02-29

Applicant: Winbond Electronics Corp.

Inventor： Kun-Che Wu ,  Tsung-Wei Lin ,  Chungchen Hsu

IPC: H01L21/308 ,  H01L21/027

CPC classification number: H01L21/3086 ,  H01L21/0274 ,  H01L21/3081

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A substrate is provided. A material layer is formed on the substrate. A first hard mask pattern is formed on the material layer. The top-view pattern of the first hard mask pattern is ring-shaped. The first hard mask pattern has an opening. A second hard mask pattern is formed on the first hard mask pattern. The second hard mask pattern fills the opening. The top-view pattern of the second hard mask pattern is completely located inside the outer contour of the top-view pattern of the first hard mask pattern. The pattern of the first hard mask pattern and the pattern of the second hard mask pattern are transferred to the material layer to form a first target pattern.