公开(公告)号：US10181560B2

公开(公告)日：2019-01-15

申请号：US15868351

申请日：2018-01-11

Applicant: Winbond Electronics Corp.

Inventor： Tseung-Yuen Tseng ,  Chun-An Lin ,  Chu-Jie Huang ,  Guang-Jyun Dai

IPC: H01L29/861 ,  H01L29/18 ,  H01L45/00 ,  H01L21/06

Abstract: A conductive-bridging random access memory and a method for fabricating a conductive-bridging random access memory are provided. The conductive-bridging random access memory includes a bottom electrode layer on a semiconductor substrate, an electrical resistance switching layer on the bottom electrode layer, an electron-capturing layer on the electrical resistance switching layer, a barrier layer on the electron-capturing layer, an ion source layer on the barrier layer, and a top electrode layer on the ion source layer. The electron-capturing layer includes electron-capturing material, and the electron affinity of the electron-capturing material is at least 60 KJ/mole.