公开(公告)号：US20170040532A1

公开(公告)日：2017-02-09

申请号：US14977664

申请日：2015-12-22

Applicant: Winbond Electronics Corp.

Inventor： Tseung-Yuen Tseng ,  Shun-Li Lan ,  Hsiang-Yu Chang ,  Chun-An Lin

IPC: H01L45/00

CPC classification number: H01L45/122 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146

Abstract: A resistive random access memory (RRAM) including a substrate, a conductive layer, a resistive switching layer, a copper-containing oxide layer, and an electron supply layer is provided. The conductive layer is disposed on the substrate. The resistive switching layer is disposed on the conductive layer. The copper-containing oxide layer is disposed on the resistive switching layer. The electron supply layer is disposed on the copper-containing oxide layer.

Abstract translation: 提供了包括基板，导电层，电阻开关层，含铜氧化物层和电子供给层的电阻随机存取存储器（RRAM）。 导电层设置在基板上。 电阻开关层设置在导电层上。 含铜氧化物层设置在电阻式开关层上。 电子供给层设置在含铜氧化物层上。