FABRICATION OF LOW-LOSS, LIGHT-WAVEGUIDING, ORIENTATION-PATTERNED SEMICONDUCTOR STRUCTURES
    1.
    发明申请
    FABRICATION OF LOW-LOSS, LIGHT-WAVEGUIDING, ORIENTATION-PATTERNED SEMICONDUCTOR STRUCTURES 有权
    低损耗,轻微波动,方位图形半导体结构的制造

    公开(公告)号:US20160025927A1

    公开(公告)日:2016-01-28

    申请号:US14794988

    申请日:2015-07-09

    Abstract: Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostucture growth process to provide interlayer interfaces having extremely low roughnesses.

    Abstract translation: 提供了制造取向图案化半导体结构的方法。 该结构是用于非线性频率转换的光波导结构。 这些结构是周期性极化的半导体异质结构,其包括沿波导的光传播轴定期交替布置的一系列材料畴。 制造取向图案化结构的方法在异构结构生长过程的中间阶段利用一系列表面平面化步骤,以提供具有极低粗糙度的层间界面。

    Fabrication of low-loss, light-waveguiding, orientation-patterned semiconductor structures
    2.
    发明授权
    Fabrication of low-loss, light-waveguiding, orientation-patterned semiconductor structures 有权
    低损耗,光波导,取向图案化半导体结构的制造

    公开(公告)号:US09244225B1

    公开(公告)日:2016-01-26

    申请号:US14794988

    申请日:2015-07-09

    Abstract: Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostucture growth process to provide interlayer interfaces having extremely low roughnesses.

    Abstract translation: 提供了制造取向图案化半导体结构的方法。 该结构是用于非线性频率转换的光波导结构。 这些结构是周期性极化的半导体异质结构,其包括沿波导的光传播轴定期交替布置的一系列材料畴。 制造取向图案化结构的方法在异构结构生长过程的中间阶段利用一系列表面平面化步骤,以提供具有极低粗糙度的层间界面。

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