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    Method of manufacturing semiconductor element, semiconductor element, and substrate
    3.
    发明授权
    Method of manufacturing semiconductor element, semiconductor element, and substrate 有权

    公开(公告)号：US12065760B2

    公开(公告)日：2024-08-20

    申请号：US17418359

    申请日：2019-12-25

    申请人： KYOCERA Corporation

    发明人： Masahiro Araki

    IPC分类号： C30B25/04 ,  C30B29/40 ,  H01L21/02

    CPC分类号： C30B29/406 ,  C30B25/04 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

    摘要： A method of manufacturing a semiconductor element according to the present disclosure includes a mask forming step of defining, on a first surface of a substrate, a front surface region not covered by a first deposition inhibiting mask as a first crystal growth region, an element forming step of forming a semiconductor layer over the first crystal growth region, a mask removing step of removing the mask, and an element separating step of separating the semiconductor layer. After the element separating step, a substrate reusing process is performed one or more times, the substrate reusing process including a mask reforming step of forming a second deposition inhibiting mask in a region differing from a formation position of the first deposition inhibiting mask to expose a second crystal growth region not covered by the mask, an element reforming step of forming a semiconductor layer to serve as an element on the second crystal growth region, a mask removing step of removing the deposition inhibiting mask, and an element separating step of separating the semiconductor layer from the substrate.

    Large area group III nitride crystals and substrates, methods of making, and methods of use
    6.
    发明授权
    Large area group III nitride crystals and substrates, methods of making, and methods of use 有权

    公开(公告)号：US12000063B2

    公开(公告)日：2024-06-04

    申请号：US17173170

    申请日：2021-02-10

    申请人： SLT Technologies, Inc

    发明人： Drew W. Cardwell ,  Mark P. D'Evelyn

    IPC分类号： C30B29/40 ,  C01B21/06 ,  C30B25/04 ,  C30B25/18

    CPC分类号： C30B25/18 ,  C01B21/0632 ,  C30B25/04 ,  C30B29/406

    摘要： Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

    PREPARATION METHOD OF ALUMINUM NITRIDE COMPOSITE STRUCTURE BASED ON TWO-DIMENSIONAL (2D) CRYSTAL TRANSITION LAYER
    7.
    发明公开
    PREPARATION METHOD OF ALUMINUM NITRIDE COMPOSITE STRUCTURE BASED ON TWO-DIMENSIONAL (2D) CRYSTAL TRANSITION LAYER 审中-公开

    公开(公告)号：US20240141549A1

    公开(公告)日：2024-05-02

    申请号：US18499095

    申请日：2023-10-31

    申请人： PEKING UNIVERSITY

    发明人： Xinqiang WANG ,  Fang LIU ,  Zhaoying CHEN ,  Bowen SHENG ,  Yucheng GUO ,  Bo SHEN

    IPC分类号： C30B25/04 ,  C30B25/18 ,  C30B29/40 ,  C30B33/00

    CPC分类号： C30B25/04 ,  C30B25/186 ,  C30B29/403 ,  C30B33/005

    摘要： The present disclosure discloses a preparation method of an aluminum nitride (AlN) composite structure based on a two-dimensional (2D) crystal transition layer. The preparation method of the present disclosure includes: transferring the 2D crystal transition layer on a first periodic groove of an epitaxial substrate; forming a second periodic groove staggered with the first periodic groove on the 2D crystal transition layer; depositing a supporting protective layer; depositing a functional layer of a required AlN-based material; and removing the 2D crystal transition layer through thermal oxidation to obtain a semi-suspended AlN composite structure. The preparation method of the present disclosure has low difficulty and is suitable for large-scale industrial production. Design windows of the periodic grooves and the AlN functional layer are large and can meet the material requirements of deep ultraviolet light-emitting diodes (DUV-LEDs) and radio frequency (RF) electronic devices for different purposes, resulting in a wide application range.

    Nitride semiconductor substrate, method for manufacturing nitride semiconductor substrate, and laminated structure
    8.
    发明授权
    Nitride semiconductor substrate, method for manufacturing nitride semiconductor substrate, and laminated structure 有权

    公开(公告)号：US11970784B2

    公开(公告)日：2024-04-30

    申请号：US17272201

    申请日：2019-08-22

    申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

    发明人： Takehiro Yoshida

    IPC分类号： C30B25/04 ,  C30B25/18 ,  C30B29/38

    CPC分类号： C30B29/38 ,  C30B25/04 ,  C30B25/18

    摘要： There is provided a nitride semiconductor substrate having a diameter of 2 inches or more and having a main surface whose closest low index crystal plane is a (0001) plane, wherein X-ray locking curve measurement for (0002) plane diffraction, which is performed to the main surface by irradiating with (Cu) Kα1 X-rays through a two-crystal monochromator of Ge (220) plane and a slit, reveals that full width at half maximum FWHMb is 32 arcsec or less, and FWHMa−FWHMb obtained by subtracting FWHMb from FWHMa is 30% or less of FWHMa, wherein FWHMa is full width at half maximum of the (0002) plane diffraction when a slit width in ω direction is 1 mm, and FWHMb is full width at half maximum of the (0002) plane diffraction when a slit width in ω direction is 0.1 mm.

    FARBRICATION METHOD
    9.
    发明公开
    FARBRICATION METHOD 审中-公开

    公开(公告)号：US20240107897A1

    公开(公告)日：2024-03-28

    申请号：US17753581

    申请日：2019-09-10

    申请人： Microsoft Technology Licensing, LLC

    发明人： Pavel ASEEV ,  Philippe CAROFF-GAONAC'H ,  Leonardus Petrus KOUWENHOVEN

    IPC分类号： H10N60/01 ,  C30B25/04 ,  C30B29/40 ,  C30B29/60 ,  H10N69/00

    CPC分类号： H10N60/01 ,  C30B25/04 ,  C30B29/40 ,  C30B29/60 ,  H10N69/00

    摘要： A fabrication method comprising: forming a mask of an amorphous material over a crystalline surface of a substrate, the mask having a pattern of openings defining areas of an active region in which one or more components of one or more active devices are to be formed, the mask further defining a non-active region in which no active devices are to be formed; and forming a deposition material through the mask by an epitaxial growth process. The deposition material thus forms in the openings of the active region. The pattern of openings through the mask further comprises one or more reservoirs formed in the non-active region, each of the reservoirs being connected by the pattern of openings in the mask to at least one of the areas in the active region, and the deposition material forming in the reservoirs as part of the epitaxial growth.