公开(公告)号：US09093821B2

公开(公告)日：2015-07-28

申请号：US14103223

申请日：2013-12-11

Applicant: Wisconsin Alumni Research Foundation

Inventor： Luke J. Mawst ,  Dan Botez ,  Thomas L. Earles ,  Jeremy D. Kirch ,  Christopher A. Sigler

IPC: H01S5/00 ,  H01S5/34 ,  H01S5/343 ,  H01S5/187

CPC classification number: H01S5/3401 ,  H01S5/1046 ,  H01S5/1228 ,  H01S5/187 ,  H01S5/3402 ,  H01S5/34306 ,  H01S2301/145

Abstract: Semiconductor lasers comprise a substrate; an active layer configured to generate transverse magnetic (TM) polarized light under an electrical bias; an upper cladding layer; a lower cladding layer; and a distributed feedback (DFB) grating defined by the interface of a layer of metal and a layer of semiconductor under the layer of metal, the interface periodically corrugated in the longitudinal direction of the laser with a periodicity of ΛDFB=mλ/(2neff), wherein m>1. The DFB grating is configured such that loss of one or more antisymmetric longitudinal modes of the laser structure via absorption to the DFB grating is sufficiently maximized so as to produce lasing of a symmetric longitudinal mode of the laser with laser emission characterized by a single-lobe beam along each direction defined by the grating diffraction orders corresponding to emission away from the plane of the grating.

Abstract translation: 半导体激光器包括衬底; 有源层，被配置为在电偏压下产生横向磁（TM）偏振光; 上包层; 下包层; 以及由金属层与金属层之间的半导体界面界定的分布式反馈（DFB）光栅，该界面在激光器的纵向方向周期性地波纹，周期为ΛDFB=mλ/（2neff） 其中m> 1。 DFB光栅被配置为使得激光器结构经由吸收到DFB光栅的一个或多个反对称纵向模式的损耗被充分地最大化，以便产生具有以单瓣为特征的激光发射的激光的对称纵向模式的激光 沿着由对应于离开光栅平面的发射的光栅衍射级限定的每个方向的光束。

公开(公告)号：US20240097404A1

公开(公告)日：2024-03-21

申请号：US17768052

申请日：2020-09-24

Applicant: Wisconsin Alumni Research Foundation

Inventor： Luke J. Mawst ,  Thomas L. Earles ,  Christopher A. Sigler ,  Dan Botez

IPC: H01S5/34 ,  H01S5/10 ,  H01S5/12

CPC classification number: H01S5/3402 ,  H01S5/1064 ,  H01S5/1228 ,  H01S5/1246 ,  H01S5/1039 ,  H01S2301/166

Abstract: Single-mode quantum cascade semiconductor lasers are provided. The lasers comprise a laser element, the laser element comprising a quantum cascade active layer; an upper cladding layer over the quantum cascade active layer; and a lower cladding layer under the quantum cascade active layer, wherein the quantum cascade active layer, the upper cladding layer and the lower cladding layer define a guided optical mode. The quantum cascade active layer and the upper and lower cladding layers are shaped in the form of a ridge structure having a front face, a back face opposite the front face, and a lasing face through which laser emission exits the ridge structure, the ridge structure configured such that the laser emission has a single-lobe, far-field beam pattern from the ridge structure comprising certain sections, including tapered sections, collateral sections, or both.

公开(公告)号：US20160025927A1

公开(公告)日：2016-01-28

申请号：US14794988

申请日：2015-07-09

Applicant: Wisconsin Alumni Research Foundation

Inventor： Dan Botez ,  Thomas F. Kuech ,  Luke J. Mawst ,  Steven Christopher Ruder

IPC: G02B6/122

CPC classification number: G02B6/122 ,  C30B25/04 ,  C30B29/403 ,  C30B29/42 ,  C30B29/44 ,  G02B2006/12035 ,  G02B2006/12097

Abstract: Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostucture growth process to provide interlayer interfaces having extremely low roughnesses.

Abstract translation: 提供了制造取向图案化半导体结构的方法。 该结构是用于非线性频率转换的光波导结构。 这些结构是周期性极化的半导体异质结构，其包括沿波导的光传播轴定期交替布置的一系列材料畴。 制造取向图案化结构的方法在异构结构生长过程的中间阶段利用一系列表面平面化步骤，以提供具有极低粗糙度的层间界面。

公开(公告)号：US09244225B1

公开(公告)日：2016-01-26

申请号：US14794988

申请日：2015-07-09

Applicant: Wisconsin Alumni Research Foundation

Inventor： Dan Botez ,  Thomas F. Kuech ,  Luke J. Mawst ,  Steven Christopher Ruder

IPC: G02B6/10 ,  G02B6/122 ,  G02B6/12

CPC classification number: G02B6/122 ,  C30B25/04 ,  C30B29/403 ,  C30B29/42 ,  C30B29/44 ,  G02B2006/12035 ,  G02B2006/12097

Abstract: Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostucture growth process to provide interlayer interfaces having extremely low roughnesses.

Abstract translation: 提供了制造取向图案化半导体结构的方法。 该结构是用于非线性频率转换的光波导结构。 这些结构是周期性极化的半导体异质结构，其包括沿波导的光传播轴定期交替布置的一系列材料畴。 制造取向图案化结构的方法在异构结构生长过程的中间阶段利用一系列表面平面化步骤，以提供具有极低粗糙度的层间界面。

公开(公告)号：US09064774B2

公开(公告)日：2015-06-23

申请号：US13894681

申请日：2013-05-15

Applicant: Wisconsin Alumni Research Foundation

Inventor： Thomas F. Kuech ,  Kevin L. Schulte ,  Luke J. Mawst ,  Tae Wan Kim ,  Brian T. Zutter

IPC: H01L21/02 ,  H01L29/15

CPC classification number: H01L29/155 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02455 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02546 ,  H01L21/02617 ,  H01L21/02664

Abstract: Virtual substrates made by hydride vapor phase epitaxy are provided comprising a semiconductor growth substrate and a substantially strain-relaxed metamorphic buffer layer (MBL) structure comprising one or more layers of a semiconductor alloy on the growth substrate. The MBL structure is compositionally graded such that its lattice constant transitions from a lattice constant at the interface with the growth substrate that is substantially the same as the lattice constant of the growth substrate to a lattice constant at a surface opposite the interface that is different from the lattice constant of the growth substrate. The virtual substrates comprise relatively thick MBL structures (e.g., >20 μm) and relatively thick growth substrates (e.g., >0.5 mm).

Abstract translation: 提供了由氢化物气相外延制备的虚拟衬底，其包括半导体生长衬底和在生长衬底上包括一层或多层半导体合金的基本上应变松弛变质缓冲层（MBL）结构。 MBL结构被组成分级，使得其晶格常数从与生长衬底的界面处的晶格常数转变，其与生长衬底的晶格常数基本相同，在与界面相反的表面处的晶格常数不同 生长衬底的晶格常数。 虚拟衬底包括相对厚的MBL结构（例如>20μm）和相对厚的生长衬底（例如> 0.5mm）。

公开(公告)号：US20140339505A1

公开(公告)日：2014-11-20

申请号：US13894681

申请日：2013-05-15

Applicant: Wisconsin Alumni Research Foundation

Inventor： Thomas F. Kuech ,  Kevin L. Schulte ,  Luke J. Mawst ,  Tae Wan Kim ,  Brian T. Zutter

IPC: H01L29/15

CPC classification number: H01L29/155 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02455 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02546 ,  H01L21/02617 ,  H01L21/02664

Abstract: Virtual substrates made by hydride vapor phase epitaxy are provided comprising a semiconductor growth substrate and a substantially strain-relaxed metamorphic buffer layer (MBL) structure comprising one or more layers of a semiconductor alloy on the growth substrate. The MBL structure is compositionally graded such that its lattice constant transitions from a lattice constant at the interface with the growth substrate that is substantially the same as the lattice constant of the growth substrate to a lattice constant at a surface opposite the interface that is different from the lattice constant of the growth substrate. The virtual substrates comprise relatively thick MBL structures (e.g., >20 μm) and relatively thick growth substrates (e.g., >0.5 mm)

Abstract translation: 提供了由氢化物气相外延制备的虚拟衬底，其包括半导体生长衬底和在生长衬底上包括一层或多层半导体合金的基本上应变松弛变质缓冲层（MBL）结构。 MBL结构被组成分级，使得其晶格常数从与生长衬底的界面处的晶格常数转变，其与生长衬底的晶格常数基本相同，在与界面相反的表面处的晶格常数不同 生长衬底的晶格常数。 虚拟底物包括相对厚的MBL结构（例如>20μm）和相对厚的生长基底（例如> 0.5mm）

公开(公告)号：US20150162724A1

公开(公告)日：2015-06-11

申请号：US14103223

申请日：2013-12-11

Applicant: Wisconsin Alumni Research Foundation

Inventor： Luke J. Mawst ,  Dan Botez ,  Thomas L. Earles ,  Jeremy D. Kirch ,  Christopher A. Sigler

IPC: H01S5/34 ,  H01S5/187 ,  H01S5/343

CPC classification number: H01S5/3401 ,  H01S5/1046 ,  H01S5/1228 ,  H01S5/187 ,  H01S5/3402 ,  H01S5/34306 ,  H01S2301/145

Abstract: Semiconductor lasers comprise a substrate; an active layer configured to generate transverse magnetic (TM) polarized light under an electrical bias; an upper cladding layer; a lower cladding layer; and a distributed feedback (DFB) grating defined by the interface of a layer of metal and a layer of semiconductor under the layer of metal, the interface periodically corrugated in the longitudinal direction of the laser with a periodicity of ΛDFB=mλ/(2neff), wherein m>1. The DFB grating is configured such that loss of one or more antisymmetric longitudinal modes of the laser structure via absorption to the DFB grating is sufficiently maximized so as to produce lasing of a symmetric longitudinal mode of the laser with laser emission characterized by a single-lobe beam along each direction defined by the grating diffraction orders corresponding to emission away from the plane of the grating.

Abstract translation: 半导体激光器包括衬底; 有源层，被配置为在电偏压下产生横向磁（TM）偏振光; 上包层; 下包层; 以及由金属层与金属层之间的半导体界面界定的分布式反馈（DFB）光栅，该界面在激光器的纵向方向周期性地波纹，周期为ΛDFB=mλ/（2neff） 其中m> 1。 DFB光栅被配置为使得激光器结构经由吸收到DFB光栅的一个或多个反对称纵向模式的损耗被充分地最大化，以便产生具有以单瓣为特征的激光发射的激光的对称纵向模式的激光 沿着由对应于离开光栅平面的发射的光栅衍射级限定的每个方向的光束。