摘要:
A cooling tube assembly for operating on a malleable molded plastic part. The cooling tube assembly comprising a porous tube/insert having a profiled inner conditioning surface, and a vacuum structure configured to cooperate with the porous tube. In use, the vacuum develops a reduced pressure adjacent the inner conditioning surface to cause an outer surface of the malleable molded plastic part, locatable within the cooling tube assembly, to contact the inner conditioning surface of the porous insert so as to allow a substantial portion of the outer surface of the malleable part, upon cooling, to attain a profile substantially corresponding to the profile of the inner conditioning surface. The cooling tube assembly further including a suction channel therein that is configured to cooperate with a valve member for the control of a suction flow therethrough that assists in a transferring of the molded article into the cooling tube assembly.
摘要:
A method for providing for electrical testing of an integrated semiconductor substrate having at least two signal processing layers. The substrate may be provided with a protective layer of plastic, silicon, silicon oxide, silicon nitride or the like. A selected region of one substrate layer to be tested electrically is exposed by etching or otherwise forming a controllably small aperture any overlying substrate layer(s) away to expose at least one selected circuit trace in the selected region and applying a selected electrical signal to the trace. Optionally, a second aperture, spaced apart from the first aperture, can be formed to expose a second selected circuit trace so that propagation of a signal in one or more substrate circuits can be tested. The aperture cross-sectional shapes may be linear or curvilinear polygons or other suitable shapes.
摘要:
A method and system providing for electrical testing of an integrated semiconductor substrate having at least two signal processing layers. The substrate may be provided with a protective layer of plastic, silicon, silicon oxide, silicon nitride or the like. A selected region of one substrate layer to be tested electrically is exposed by etching or otherwise forming a controllably small aperture any overlying substrate layer(s) away to expos at least one selected circuit trace in the selected region and applying a selected electrical signal to the trace. Optionally, a second aperture, spaced apart from the first aperture, can be formed to expose a second selected circuit trace so that propagation of a signal in one or more substrate circuits can be tested. The aperture cross-sectional shapes may be linear or curvilinear polygons or other suitable shapes.