Post-molding molded article conditioning apparatus with a selectively controlled transfer flow structure and a related method
    1.
    发明申请
    Post-molding molded article conditioning apparatus with a selectively controlled transfer flow structure and a related method 失效
    具有选择性控制的转移流动结构的后成形模制品调节装置和相关方法

    公开(公告)号:US20060204608A1

    公开(公告)日:2006-09-14

    申请号:US11078769

    申请日:2005-03-10

    IPC分类号: B29C45/72

    摘要: A cooling tube assembly for operating on a malleable molded plastic part. The cooling tube assembly comprising a porous tube/insert having a profiled inner conditioning surface, and a vacuum structure configured to cooperate with the porous tube. In use, the vacuum develops a reduced pressure adjacent the inner conditioning surface to cause an outer surface of the malleable molded plastic part, locatable within the cooling tube assembly, to contact the inner conditioning surface of the porous insert so as to allow a substantial portion of the outer surface of the malleable part, upon cooling, to attain a profile substantially corresponding to the profile of the inner conditioning surface. The cooling tube assembly further including a suction channel therein that is configured to cooperate with a valve member for the control of a suction flow therethrough that assists in a transferring of the molded article into the cooling tube assembly.

    摘要翻译: 用于在可锻塑料部件上操作的冷却管组件。 冷却管组件包括具有成型内部调节表面的多孔管/插入件,以及构造成与多孔管配合的真空结构。 在使用中,真空在内部调节表面附近产生减小的压力,以使位于冷却管组件内的可延展的模制塑料部件的外表面与多孔插入件的内部调节表面接触,从而允许大部分 在可延展部分的外表面上,在冷却时,获得基本对应于内调节表面轮廓的轮廓。 冷却管组件还包括其中的吸入通道,其构造成与阀构件协作以控制通过其中的抽吸流,其有助于将模制品转移到冷却管组件中。

    Efficient debug package design
    2.
    发明授权
    Efficient debug package design 失效
    高效的调试包设计

    公开(公告)号:US06246252B1

    公开(公告)日:2001-06-12

    申请号:US09364563

    申请日:1999-07-30

    IPC分类号: G01R3126

    摘要: A method for providing for electrical testing of an integrated semiconductor substrate having at least two signal processing layers. The substrate may be provided with a protective layer of plastic, silicon, silicon oxide, silicon nitride or the like. A selected region of one substrate layer to be tested electrically is exposed by etching or otherwise forming a controllably small aperture any overlying substrate layer(s) away to expose at least one selected circuit trace in the selected region and applying a selected electrical signal to the trace. Optionally, a second aperture, spaced apart from the first aperture, can be formed to expose a second selected circuit trace so that propagation of a signal in one or more substrate circuits can be tested. The aperture cross-sectional shapes may be linear or curvilinear polygons or other suitable shapes.

    摘要翻译: 一种用于提供具有至少两个信号处理层的集成半导体衬底的电测试的方法。 衬底可以设置有塑料,硅,氧化硅,氮化硅等的保护层。 待电测试的一个衬底层的选定区域通过蚀刻或以其它方式形成任何覆盖的衬底层的可控制的小孔而露出,以暴露所选区域中的至少一个选择的电路迹线,并将选择的电信号施加到 跟踪。 可选地,可以形成与第一孔间隔开的第二孔,以暴露第二选择的电路迹线,从而可以测试一个或多个衬底电路中的信号传播。 孔径横截面形状可以是线性或曲线多边形或其它合适的形状。

    Efficient device debug system
    3.
    发明授权
    Efficient device debug system 有权
    高效的设备调试系统

    公开(公告)号:US06472900B1

    公开(公告)日:2002-10-29

    申请号:US09874188

    申请日:2001-06-04

    IPC分类号: G01R3126

    摘要: A method and system providing for electrical testing of an integrated semiconductor substrate having at least two signal processing layers. The substrate may be provided with a protective layer of plastic, silicon, silicon oxide, silicon nitride or the like. A selected region of one substrate layer to be tested electrically is exposed by etching or otherwise forming a controllably small aperture any overlying substrate layer(s) away to expos at least one selected circuit trace in the selected region and applying a selected electrical signal to the trace. Optionally, a second aperture, spaced apart from the first aperture, can be formed to expose a second selected circuit trace so that propagation of a signal in one or more substrate circuits can be tested. The aperture cross-sectional shapes may be linear or curvilinear polygons or other suitable shapes.

    摘要翻译: 一种提供具有至少两个信号处理层的集成半导体衬底的电测试的方法和系统。 衬底可以设置有塑料,硅,氧化硅,氮化硅等的保护层。 待电测试的一个衬底层的选定区域通过蚀刻或以其他方式形成可控制的小孔而暴露出任何覆盖的衬底层,以暴露所选区域中的至少一个所选择的电路迹线,并将所选择的电信号施加到 跟踪。 可选地,可以形成与第一孔间隔开的第二孔,以暴露第二选择的电路迹线,从而可以测试一个或多个衬底电路中的信号传播。 孔径横截面形状可以是线性或曲线多边形或其它合适的形状。