公开(公告)号：US3962391A

公开(公告)日：1976-06-08

申请号：US452934

申请日：1974-03-20

申请人： Wolfgang Dietze ,  Richard Mittermeier ,  Gerhard Steinwagner

发明人： Wolfgang Dietze ,  Richard Mittermeier ,  Gerhard Steinwagner

IPC分类号： C04B35/565 ,  B28B1/30 ,  B28B21/42 ,  C01B33/02 ,  C01B33/035 ,  C23C16/01 ,  C23C16/22 ,  C23C16/44 ,  C30B29/60 ,  C30B31/14 ,  B29C13/00 ,  B29C17/10

CPC分类号： C30B31/14 ,  C23C16/01 ,  C23C16/22

摘要： A support structure composed of Si or SiC for supporting semiconductor crystal discs during annealing or doping thereof. A somewhat tube-shaped member having at least one flat side is formed by thermal deposition of a gaseous silicon compound onto a similarly shaped carrier member and the tube-shaped member is then cut and mechanically processed in directions parallel and perpendicular to the axes of the tube to form a support structure having a flat base and upwardly extending curved side walls.

摘要翻译： 由Si或SiC组成的支撑结构，用于在退火或掺杂期间支撑半导体晶体盘。 通过将气态硅化合物热沉积到类似形状的载体构件上形成具有至少一个平坦侧面的稍微管状的构件，然后将管状构件切割并在垂直于 以形成具有平坦基部和向上延伸的弯曲侧壁的支撑结构。

公开(公告)号：US4093201A

公开(公告)日：1978-06-06

申请号：US638299

申请日：1975-12-08

申请人： Wolfgang Dietze ,  Richard Mittermeier ,  Gerhard Steinwagner

发明人： Wolfgang Dietze ,  Richard Mittermeier ,  Gerhard Steinwagner

IPC分类号： C23C16/01 ,  C23C16/22 ,  C30B31/14 ,  B23Q3/00

CPC分类号： C23C16/01 ,  C23C16/22 ,  C30B31/14 ,  Y10S206/832 ,  Y10S269/903

摘要： A support structure composed of Si or SiC for supporting semiconductor crystal discs during annealing or doping thereof. A somewhat tube-shaped member having at least one flat side is formed by thermal deposition of a gaseous silicon compound onto a similarly shaped carrier member and the tube-shaped member is then cut and mechanically processed in directions parallel and perpendicular to the axes of the tube to form a support structure having a flat base and upwardly extending curved side walls.

摘要翻译： 由Si或SiC组成的支撑结构，用于在退火或掺杂期间支撑半导体晶体盘。 通过将气态硅化合物热沉积到类似形状的载体构件上形成具有至少一个平坦侧面的稍微管状的构件，然后将管状构件切割并在垂直于 以形成具有平坦基部和向上延伸的弯曲侧壁的支撑结构。