公开(公告)号：US20230253359A1

公开(公告)日：2023-08-10

申请号：US17665191

申请日：2022-02-04

Applicant: Wolfspeed, Inc.

Inventor： Alexander Komposch ,  Arthur Fong-Yuen Pun ,  Scott T. Sheppard ,  Kevin Shawne Schneider

IPC: H01L23/00 ,  H01L29/20 ,  H01L29/16

CPC classification number: H01L24/29 ,  H01L29/2003 ,  H01L29/1608 ,  H01L29/7786

Abstract: A semiconductor die includes a silicon carbide (SiC) substrate and a metal stack. The SiC substrate has a first surface including a semiconductor layer thereon and a second surface that is opposite the first surface. The metal stack has an upper surface that attaches to the second surface of the SiC substrate and a lower surface that is opposite the upper surface. The metal stack includes a eutectic solder layer and a noble metal layer on the eutectic solder layer. The noble metal layer comprises a final metal layer on the lower surface.

公开(公告)号：US20220328634A1

公开(公告)日：2022-10-13

申请号：US17848984

申请日：2022-06-24

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Jia Guo ,  Yueying Liu ,  Jeremy Fisher ,  Scott T. Sheppard

IPC: H01L29/20 ,  H01L29/778 ,  H01L29/40 ,  H01L29/423

Abstract: A transistor device includes a first unit subcell including having a first active region width extending in a first direction, and a second unit subcell having a second active region width extending in the first direction and arranged adjacent the first unit subcell in the first direction. The first unit subcell and the second unit subcell share a common drain contact and have separate gate contacts that are aligned in the first direction. Each unit subcell includes a field plate that is connected to a source contact outside the active region and that does not cross over the gate contact.