公开(公告)号：US11587842B2

公开(公告)日：2023-02-21

申请号：US17083712

申请日：2020-10-29

Applicant: Wolfspeed, Inc.

Inventor： Chris Hardiman ,  Kyoung-Keun Lee ,  Fabian Radulescu ,  Daniel Namishia ,  Scott Thomas Sheppard

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/31 ,  H01L29/06 ,  H01L21/56 ,  H01L23/532 ,  H01L23/00 ,  H01L29/20

Abstract: A semiconductor die includes a substrate, a first passivation layer over the substrate, and a second passivation layer over the first passivation layer and the substrate. The substrate has boundaries defined by a substrate termination edge. The first passivation layer is over the substrate such that it terminates at a first passivation termination edge that is inset from the substrate termination edge by a first distance. The second passivation layer is over the first passivation layer and the substrate such that it terminates at a second passivation termination edge that is inset from the substrate termination edge by a second distance. The second distance is less than the first distance such that the second passivation layer overlaps the first passivation layer.