公开(公告)号：US20240266348A1

公开(公告)日：2024-08-08

申请号：US18105586

申请日：2023-02-03

Applicant: Wolfspeed, Inc.

Inventor： Fabian Radulescu ,  Basim Noori ,  Scott Sheppard ,  Qianli Mu ,  Jeremy Fisher ,  Dan Namishia

IPC: H01L27/085 ,  H01L23/00 ,  H01L23/528

CPC classification number: H01L27/085 ,  H01L23/528 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0603 ,  H01L2224/0615 ,  H01L2224/13014 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/1415 ,  H01L2224/16227

Abstract: A transistor device includes a substrate and a plurality of transistor unit cells arranged in parallel on the substrate. Each of the transistor unit cells includes a source contact, a drain contact, and a gate finger between the source contact and the drain contact. The gate finger extends in a first direction and has a first end and a second end. The transistor device further includes a first solder bump on the transistor device that is within a periphery of the active region of the device and is electrically connected to the gate finger of a first one of the unit cells at a feed point that is between the first end and the second end of the gate finger.

公开(公告)号：US11616136B2

公开(公告)日：2023-03-28

申请号：US17180048

申请日：2021-02-19

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Evan Jones ,  Dan Namishia ,  Chris Hardiman ,  Fabian Radulescu ,  Terry Alcorn ,  Scott Sheppard ,  Bruce Schmukler

IPC: H01L21/00 ,  H01L29/08 ,  H01L29/778 ,  H01L21/285 ,  H01L21/306 ,  H01L21/765 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H03F1/02 ,  H03F3/21

Abstract: A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.

公开(公告)号：US11887945B2

公开(公告)日：2024-01-30

申请号：US17039043

申请日：2020-09-30

Applicant: Wolfspeed, Inc.

Inventor： Lei Zhao ,  Fabian Radulescu

IPC: H01L23/66 ,  H01L23/528 ,  H01L23/552 ,  H01L27/06 ,  H01L29/06 ,  H01L29/20 ,  H01L29/778 ,  H01L29/78 ,  H03F3/21 ,  H03F1/02 ,  H01L23/48

CPC classification number: H01L23/66 ,  H01L23/481 ,  H01L23/5286 ,  H01L23/552 ,  H01L27/0605 ,  H01L29/0642 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/7816 ,  H03F1/0288 ,  H03F3/211 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6655 ,  H01L2223/6683

Abstract: The present disclosure relates to a semiconductor device with isolation and/or protection structures. A semiconductor device can include a substrate, a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the substrate, and an isolation structure formed on the substrate. The isolation structure can be formed on the substrate between the first transistor and the second transistor. The isolation structure can be configured to isolate the first transistor and the second transistor.

公开(公告)号：US20230395670A1

公开(公告)日：2023-12-07

申请号：US17834144

申请日：2022-06-07

Applicant: Wolfspeed, Inc.

Inventor： Chris Hardiman ,  Kyoung-Keun Lee ,  Kyle Bothe ,  Fabian Radulescu

IPC: H01L29/423 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L21/285 ,  H01L29/66

CPC classification number: H01L29/42316 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786 ,  H01L21/28581 ,  H01L29/66462

Abstract: A transistor device includes a semiconductor structure comprising a channel layer and a barrier layer; source and drain contacts on the semiconductor structure; and a gate on the semiconductor structure between the source and drain contacts. A first portion of the barrier layer extending between the source or drain contact and the gate has a first thickness, a second portion of the barrier layer between the gate and the channel layer has a second thickness, and the first thickness is about 1.5 times to 4 times greater than the second thickness. Related methods of fabrication using a looped recess process are also discussed.

公开(公告)号：US11769768B2

公开(公告)日：2023-09-26

申请号：US16889432

申请日：2020-06-01

Applicant: Wolfspeed, Inc.

Inventor： Terry Alcorn ,  Daniel Namishia ,  Fabian Radulescu

IPC: H01L27/06 ,  H01L21/683 ,  H01L21/768 ,  H01L21/8258 ,  H01L23/48 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L27/0694 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/8258 ,  H01L23/481 ,  H01L23/498 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L27/0605 ,  H01L2224/1357 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/73257 ,  H01L2924/1421

Abstract: An integrated circuit device includes a radio frequency transistor amplifier die having a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and includes a plurality of transistor cells adjacent the first surface, and terminals coupled to the transistor cells. At least one passive electronic component is provided on the second surface of the die and is electrically connected to at least one of the terminals, for example, by at least one conductive via. One or more conductive pillar structures may protrude from the first surface of the die to provide electrical connections to one or more of the terminals.

公开(公告)号：US20230075505A1

公开(公告)日：2023-03-09

申请号：US17466783

申请日：2021-09-03

Applicant: Wolfspeed, Inc.

Inventor： Fabian Radulescu ,  Basim Noori ,  Scott Sheppard ,  Kwangmo Chris Lim

IPC: H01L23/00 ,  H01L29/417 ,  H01L29/423 ,  H01L23/48

Abstract: A radio frequency (“RF”) transistor amplifier die includes a semiconductor layer structure having a plurality of transistor cells, and an insulating layer on a surface of the semiconductor layer structure. Conductive pillar structures protrude from the insulating layer opposite the surface of the semiconductor layer structure, and are configured to provide input signal, output signal, or ground connections to the transistor cells. The ground connections are arranged between the input and/or output signal connections to the transistor cells. Related devices and packages are also discussed.

公开(公告)号：US20240063300A1

公开(公告)日：2024-02-22

申请号：US17890453

申请日：2022-08-18

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Chris Hardiman ,  Elizabeth Keenan ,  Jia Guo ,  Fabian Radulescu ,  Scott Sheppard

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/417

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/41725

Abstract: A high electron mobility transistor comprises a semiconductor layer structure that includes a channel layer and a barrier layer and source and drain contacts on the semiconductor layer structure. A gate contact and a multi-layer passivation structure are provided on the semiconductor layer structure between the source contact and the drain contact. The multi-layer passivation structure comprises at least first and second silicon nitride layers that have different material compositions. A spacer passivation layer is provided on sidewalls of the first and second silicon nitride layers. A material composition of the spacer passivation layer is different than a material composition of at least one of the layers of the multi-layer passivation structure.

公开(公告)号：US11682634B2

公开(公告)日：2023-06-20

申请号：US17060540

申请日：2020-10-01

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Dan Namishia ,  Fabian Radulescu ,  Scott Sheppard

IPC: H01L23/528 ,  H01L23/31 ,  H01L23/66 ,  H01L23/64 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00

CPC classification number: H01L23/564 ,  H01L23/31 ,  H01L23/528 ,  H01L23/642 ,  H01L23/645 ,  H01L23/66 ,  H01L25/0655 ,  H01L25/50 ,  H01L2223/6683

Abstract: A packaged electronic circuit includes a substrate having an upper surface, a first metal layer on the upper surface of the substrate, a first polymer layer on the first metal layer opposite the substrate, a second metal layer on the first polymer layer opposite the first metal layer, a dielectric layer on the first polymer layer and at least a portion of the second metal layer and a second polymer layer on the dielectric layer.

公开(公告)号：US11658234B2

公开(公告)日：2023-05-23

申请号：US17325576

申请日：2021-05-20

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Terry Alcorn ,  Dan Namishia ,  Jia Guo ,  Matt King ,  Saptharishi Sriram ,  Jeremy Fisher ,  Fabian Radulescu ,  Scott Sheppard ,  Yueying Liu

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/40

CPC classification number: H01L29/7786 ,  H01L29/402 ,  H01L29/66462

Abstract: A transistor device includes a semiconductor epitaxial layer structure including a channel layer and a barrier layer on the channel layer, a source contact and a drain contact on the barrier layer, an insulating layer on the semiconductor layer between the source contact and the drain contact, and a gate contact on the insulating layer. The gate contact includes a central portion that extends through the insulating layer and contacts the barrier layer and a drain side wing that extends laterally from the central portion of the gate toward the drain contact by a distance ΓD. The drain side wing of the gate contact is spaced apart from the barrier layer by a distance d1 that is equal to a thickness of the insulating layer. The distance ΓD is less than about 0.3 μm, and the distance d1 is less than about 80 nm.

公开(公告)号：US11646310B2

公开(公告)日：2023-05-09

申请号：US16889432

申请日：2020-06-01

Applicant: Wolfspeed, Inc.

Inventor： Terry Alcorn ,  Daniel Namishia ,  Fabian Radulescu

IPC: H01L27/06 ,  H01L21/683 ,  H01L21/768 ,  H01L21/8258 ,  H01L23/48 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L27/0694 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/8258 ,  H01L23/481 ,  H01L23/498 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L27/0605 ,  H01L2224/1357 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/73257 ,  H01L2924/1421

Abstract: An integrated circuit device includes a radio frequency transistor amplifier die having a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and includes a plurality of transistor cells adjacent the first surface, and terminals coupled to the transistor cells. At least one passive electronic component is provided on the second surface of the die and is electrically connected to at least one of the terminals, for example, by at least one conductive via. One or more conductive pillar structures may protrude from the first surface of the die to provide electrical connections to one or more of the terminals.