公开(公告)号：US20170084335A1

公开(公告)日：2017-03-23

申请号：US15263724

申请日：2016-09-13

申请人： Wook-Ghee HAHN ,  Chang-Yeon YU

发明人： Wook-Ghee HAHN ,  Chang-Yeon YU

IPC分类号： G11C16/08 ,  G11C16/24 ,  G11C16/04

CPC分类号： G11C16/08 ,  G11C8/08 ,  G11C8/10 ,  G11C8/12 ,  G11C16/0483 ,  G11C16/20 ,  G11C16/24

摘要： A row decoder of the semiconductor memory device includes a decoding and precharging unit that is connected between a high voltage node and a block word line, wherein the decoding and precharging unit precharges the block word line, and wherein the decoding and precharging unit includes one or more decoding transistors that decode an address and form a transmission path for transmitting a block selection voltage. The row decoder further includes a pass transistor block that transmits one or more row driving voltages to row lines in response to the block selection voltage, wherein the block selection voltage is boosted according to a switching operation of the pass transistor block.