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    THIN-FILM TRANSISTOR ARRAY PANEL AND METHOD OF FABRICATING THE SAME
    1.
    发明申请
    THIN-FILM TRANSISTOR ARRAY PANEL AND METHOD OF FABRICATING THE SAME 审中-公开
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US20100006844A1

    公开(公告)日：2010-01-14

    申请号：US12464452

    申请日：2009-05-12

    申请人： Woong-Kwon KIM ,  Jun-Ho SONG ,  Joo-Han KIM ,  In-Woo KIM ,  Ho-Jun LEE

    发明人： Woong-Kwon KIM ,  Jun-Ho SONG ,  Joo-Han KIM ,  In-Woo KIM ,  Ho-Jun LEE

    IPC分类号： H01L33/00 ,  H01L21/336

    CPC分类号： H01L27/1288 ,  H01L27/124

    摘要： A thin-film transistor (“TFT”) array and a method of fabricating the TFT array panel include: an insulating substrate; a gate line and a data line which are insulated from each other on the insulating substrate and are arranged in a lattice; common wiring extended parallel to the gate line on the insulating substrate; a gate insulating film disposed on the gate line and the common wiring; a semiconductor layer disposed on the gate insulating film; contact holes which penetrate through the gate insulating film and the semiconductor layer disposed on the common wiring; a plurality of common electrodes connected to the common wiring by the contact holes and arranged parallel to each other; and a plurality of pixel electrodes arranged parallel to the plurality of common electrodes.

    摘要翻译： 薄膜晶体管（“TFT”）阵列和制造TFT阵列面板的方法包括：绝缘基片; 栅极线和数据线，其在绝缘基板上彼此绝缘并且布置成格子; 公共布线平行于绝缘基板上的栅极线延伸; 设置在栅极线和公共布线上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层; 穿过栅极绝缘膜的接触孔和布置在公共布线上的半导体层; 多个公共电极通过接触孔连接到公共布线并且彼此平行布置; 以及平行于所述多个公共电极排列的多个像素电极。

    THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
    薄膜晶体管阵列基板及其制造方法

    公开(公告)号：US20090309101A1

    公开(公告)日：2009-12-17

    申请号：US12435773

    申请日：2009-05-05

    申请人： Dae-Cheol KIM ,  Woong-Kwon KIM ,  Sang-Youn HAN ,  In-Woo KIM ,  Ho-Jun LEE ,  Byeong-Jae AHN

    发明人： Dae-Cheol KIM ,  Woong-Kwon KIM ,  Sang-Youn HAN ,  In-Woo KIM ,  Ho-Jun LEE ,  Byeong-Jae AHN

    IPC分类号： H01L33/00 ,  H01L21/336

    CPC分类号： G02F1/136213 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288

    摘要： A thin film transistor array substrate and its manufacturing method are disclosed. A thin film transistor (TFT) includes a gate electrode formed on a substrate, and source and drain electrodes formed on the gate electrode and separated from each other. A common line made of the same material as the gate electrode is formed on the substrate. A storage capacitor includes a storage electrode connected with a storage electrode line and a pixel electrode formed on the storage electrode. The storage electrode and the pixel electrode are formed by patterning a transparent conductive film, and accordingly, light can be transmitted through the region where the storage capacitor is formed to thus increase an aperture ratio.

    摘要翻译： 公开了薄膜晶体管阵列基板及其制造方法。 薄膜晶体管（TFT）包括形成在基板上的栅极电极和形成在栅电极上并彼此分离的源极和漏极。 在基板上形成由与栅电极相同的材料构成的公共线。 存储电容器包括与存储电极线连接的存储电极和形成在存储电极上的像素电极。 存储电极和像素电极通过图案化透明导电膜而形成，因此可以通过形成存储电容器的区域透射光，从而增加开口率。

    THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME
    3.
    发明申请
    THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号：US20100109008A1

    公开(公告)日：2010-05-06

    申请号：US12575570

    申请日：2009-10-08

    申请人： Woong-Kwon KIM ,  In-Woo KIM ,  Ki-Hun JEONG

    发明人： Woong-Kwon KIM ,  In-Woo KIM ,  Ki-Hun JEONG

    IPC分类号： H01L27/12 ,  H01L21/77

    CPC分类号： H01L27/1288 ,  H01L27/124

    摘要： A thin-film transistor (“TFT”) substrate includes an insulating substrate, a gate line and a data line which are insulated from each other, disposed on the insulating substrate and are arranged in a lattice, and a pixel electrode which is electrically connected to the gate line and the data line by a switching device. The data line includes a lower layer which is formed of a transparent electrode, and an upper layer which is disposed directly on the lower layer.

    摘要翻译： 薄膜晶体管（“TFT”）衬底包括彼此绝缘的绝缘衬底，栅极线和数据线，其被布置在绝缘衬底上并且布置成格子;以及电连接的像素电极 通过开关装置到栅极线和数据线。 数据线包括由透明电极形成的下层和直接设置在下层上的上层。

    THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管显示面板及其制造方法

    公开(公告)号：US20100038644A1

    公开(公告)日：2010-02-18

    申请号：US12504012

    申请日：2009-07-16

    申请人： Jun-Ho SONG ,  Woong-Kwon KIM

    发明人： Jun-Ho SONG ,  Woong-Kwon KIM

    IPC分类号： H01L27/12 ,  H01L21/77

    CPC分类号： G02F1/134363 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2001/13629 ,  G02F2001/136295 ,  G02F2201/124 ,  G02F2201/50 ,  H01L27/124 ,  H01L27/1288

    摘要： A thin film transistor display panel includes an insulating substrate, gate lines and data lines disposed intersecting each other on the insulating substrate so as to be electrically insulated from each other, common lines provided on the insulating substrate in parallel to the gate lines, a gate insulating film disposed on the gate lines and the common lines, contact holes disposed passing through the gate insulating film disposed on the common lines, a plurality of common electrodes electrically connected to the common lines through the contact holes and arranged in parallel to each other, and a plurality of pixel electrodes arranged in parallel to the common electrodes. The thickness of the common electrode and the pixel electrode is smaller than that of the data line.

    摘要翻译： 薄膜晶体管显示面板包括绝缘基板，栅极线和数据线，其布置在绝缘基板上彼此交叉以彼此电绝缘，平行于栅极线设置在绝缘基板上的公共线，栅极 设置在栅极线和公共线上的绝缘膜，设置在通过公共线路上的栅极绝缘膜设置的接触孔，多个公共电极，通过接触孔电连接到公共线并且彼此平行布置， 以及平行于公共电极排列的多个像素电极。 公共电极和像素电极的厚度小于数据线的厚度。

    LIQUID CRYSTAL DISPLAY AND A METHOD FOR MANUFACTURING THE SAME
    6.
    发明申请
    LIQUID CRYSTAL DISPLAY AND A METHOD FOR MANUFACTURING THE SAME 审中-公开
    液晶显示器及其制造方法

    公开(公告)号：US20090303423A1

    公开(公告)日：2009-12-10

    申请号：US12400261

    申请日：2009-03-09

    申请人： Woong-Kwon KIM ,  Jun-Ho SONG

    发明人： Woong-Kwon KIM ,  Jun-Ho SONG

    IPC分类号： G02F1/1339 ,  G02F1/1333 ,  G02F1/13

    CPC分类号： G02F1/13394 ,  G02F2001/136222

    摘要： A liquid crystal display including: a first substrate; a gate line and a data line formed on the first substrate and crossing each other; a thin film transistor connected to the gate line and the data line; an insulating layer formed on the gate line and the data line, and including an opening; a pixel electrode connected to the thin film transistor; a first spacer formed in the opening; and a second spacer formed on the insulating layer, wherein a distance from a top surface of the insulating layer to a top surface of the first spacer is different from a distance from the top surface of the insulating layer to a top surface of the second spacer.

    摘要翻译： 一种液晶显示器，包括：第一基板; 栅极线和数据线，形成在第一基板上并彼此交叉; 连接到栅极线和数据线的薄膜晶体管; 形成在栅极线和数据线上的绝缘层，并且包括开口; 连接到薄膜晶体管的像素电极; 形成在开口中的第一间隔件; 以及形成在所述绝缘层上的第二间隔物，其中从所述绝缘层的顶表面到所述第一间隔件的顶表面的距离不同于从所述绝缘层的顶表面到所述第二间隔件的顶表面的距离 。

    THIN FLIM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    THIN FLIM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
    薄片晶体管基板及其制造方法

    公开(公告)号：US20120003768A1

    公开(公告)日：2012-01-05

    申请号：US13231225

    申请日：2011-09-13

    申请人： Hong-Kee CHIN ,  Sang-Gab KIM ,  Woong-Kwon KIM ,  Yong-Mo CHOI ,  Seung-Ha CHOI ,  Shin-Il CHOI ,  Ho-Jun LEE ,  Jung-Suk BANG ,  Yu-Gwang JEONG

    发明人： Hong-Kee CHIN ,  Sang-Gab KIM ,  Woong-Kwon KIM ,  Yong-Mo CHOI ,  Seung-Ha CHOI ,  Shin-Il CHOI ,  Ho-Jun LEE ,  Jung-Suk BANG ,  Yu-Gwang JEONG

    IPC分类号： H01L33/16

    CPC分类号： H01L27/12 ,  H01L27/1248 ,  H01L27/1288

    摘要： A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer.

    摘要翻译： 提供一种薄膜晶体管（TFT）基板，其中在接触部分中提供导电材料之间的足够大的接触面积以及制造TFT基板的方法。 TFT基板包括形成在绝缘基板上的栅极互连线，覆盖栅极互连线的栅极绝缘层，布置在栅极绝缘层上的半导体层，包括数据线，源极和漏极的数据互连线 形成在所述半导体层上，形成在所述数据互连线上并暴露所述漏电极的第一钝化层，形成在所述第一钝化膜上的第二钝化层和与所述漏电极电连接的像素电极。 第二钝化层的外侧壁位于第一钝化层的外侧壁的内侧。

    THIN FLIM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    THIN FLIM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
    薄片晶体管基板及其制造方法

    公开(公告)号：US20100148182A1

    公开(公告)日：2010-06-17

    申请号：US12429388

    申请日：2009-04-24

    申请人： Hong-Kee CHIN ,  Sang-Gab KIM ,  Woong-Kwon KIM ,  Yong-Mo CHOI ,  Seung-Ha CHOI ,  Shin-Il CHOI ,  Ho-Jun LEE ,  Jung-Suk BANG ,  Yu-Gwang JEONG

    发明人： Hong-Kee CHIN ,  Sang-Gab KIM ,  Woong-Kwon KIM ,  Yong-Mo CHOI ,  Seung-Ha CHOI ,  Shin-Il CHOI ,  Ho-Jun LEE ,  Jung-Suk BANG ,  Yu-Gwang JEONG

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L27/12 ,  H01L27/1248 ,  H01L27/1288

    摘要： A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer.

    摘要翻译： 提供一种薄膜晶体管（TFT）基板，其中在接触部分中提供导电材料之间的足够大的接触面积以及制造TFT基板的方法。 TFT基板包括形成在绝缘基板上的栅极互连线，覆盖栅极互连线的栅极绝缘层，布置在栅极绝缘层上的半导体层，包括数据线，源极和漏极的数据互连线 形成在所述半导体层上，形成在所述数据互连线上并暴露所述漏电极的第一钝化层，形成在所述第一钝化膜上的第二钝化层和与所述漏电极电连接的像素电极。 第二钝化层的外侧壁位于第一钝化层的外侧壁的内侧。

    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US20110095300A1

    公开(公告)日：2011-04-28

    申请号：US12904281

    申请日：2010-10-14

    申请人： Dae-Cheol KIM ,  Woong-Kwon KIM ,  Sang-Youn HAN

    发明人： Dae-Cheol KIM ,  Woong-Kwon KIM ,  Sang-Youn HAN

    IPC分类号： H01L25/075 ,  H01L21/336

    CPC分类号： H01L27/1288 ,  H01L27/124

    摘要： A manufacturing method of a thin film transistor array panel includes forming a gate line on a substrate and a gate insulating layer on the gate line, forming a semiconductor on the gate insulating layer, forming a first data line and a first drain electrode on the semiconductor, forming a lower passivation layer on the first data line and the first drain electrode, forming an upper passivation layer on the lower passivation layer and a metal layer on the upper passivation layer, etching the metal layer by using a photosensitive film as a mask to form a reflecting electrode and to expose the lower passivation layer, etching the exposed lower passivation layer to form a first contact hole exposing the first drain electrode, and forming a connection assistance member connecting the first drain electrode and the reflecting electrode through the first contact hole after removing the photosensitive film.

    摘要翻译： 一种薄膜晶体管阵列面板的制造方法，包括在栅极线上形成栅极线和栅极绝缘层，在栅极绝缘层上形成半导体，在半导体上形成第一数据线和第一漏极 在所述第一数据线和所述第一漏电极上形成下钝化层，在所述下钝化层上形成上钝化层，在所述上钝化层上形成金属层，通过使用感光膜作为掩模蚀刻所述金属层 形成反射电极并暴露下钝化层，蚀刻暴露的下钝化层以形成暴露第一漏极的第一接触孔，以及形成通过第一接触孔连接第一漏电极和反射电极的连接辅助构件 去除感光膜后。