OPTICAL SENSOR
    5.
    发明申请
    OPTICAL SENSOR 有权
    光传感器

    公开(公告)号:US20120248452A1

    公开(公告)日:2012-10-04

    申请号:US13209188

    申请日:2011-08-12

    IPC分类号: H01L31/0376

    摘要: An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.

    摘要翻译: 提供了防止半导体层损坏并防止源电极和漏极的断开和短路的光学传感器以及光学传感器的制造方法。 光学传感器包括:基板; 包括设置在所述基板上的第一半导体层的红外线感测薄膜晶体管; 包括设置在所述基板上的第二半导体层的可见光线感测薄膜晶体管; 开关薄膜晶体管,其包括设置在所述基板上的第三半导体层; 以及半导体钝化层,其包围第一半导体层,第二半导体层和第三半导体层中的至少一个的端部的上表面和侧面。

    THIN FILM TRANSISTOR ARRAY AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    THIN FILM TRANSISTOR ARRAY AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20120208330A1

    公开(公告)日:2012-08-16

    申请号:US13450643

    申请日:2012-04-19

    IPC分类号: H01L21/336

    摘要: A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.

    摘要翻译: 制造薄膜晶体管阵列基板的方法包括:在基板上形成栅极图案; 在所述基板上形成第一栅极绝缘膜和第二栅极绝缘膜; 在衬底上形成源极/漏极图案和半导体图案; 在衬底上形成钝化膜; 在钝化膜上形成光刻胶图案; 使用光刻胶图形图案化钝化膜以形成钝化膜图案,钝化膜的图案化包括过蚀刻钝化膜以在钝化膜中形成开放区域; 在基板上形成透明电极膜; 在所述光刻胶图案上除去所述光刻胶图案和所述透明电极膜的一部分; 以及在所述第一栅极绝缘层上形成像素电极。

    DISPLAY PANEL HAVING EMBEDDED LIGHT SENSORS
    8.
    发明申请
    DISPLAY PANEL HAVING EMBEDDED LIGHT SENSORS 有权
    具有嵌入式光传感器的显示面板

    公开(公告)号:US20120182277A1

    公开(公告)日:2012-07-19

    申请号:US13300358

    申请日:2011-11-18

    IPC分类号: G09G5/00

    CPC分类号: G06F3/0412

    摘要: A display panel includes a plurality of pixels disposed on a first panel substrate of first and second panel substrates that face each other and cooperate to display an image. The second panel substrate includes a base substrate, a read-out line, a first insulating layer, a scan line, a switching device, and a light sensor. The read-out line is disposed on the base substrate and extended in a direction. The first insulating layer is disposed on the read-out line. The scan line is extended to cross the read-out line and disposed on the first insulating layer. The switching device includes a first electrode connected to the scan line, a second electrode connected to a read-out line, and a third electrode spaced apart from the second electrode. The light sensor is structured to selectively detect lights of predetermined wavelengths and connected to the third electrode of the switching device.

    摘要翻译: 显示面板包括多个像素,其设置在第一和第二面板基板的彼此面对并配合以显示图像的第一面板基板上。 第二面板基板包括基底基板,读出线,第一绝缘层,扫描线,开关器件和光传感器。 读出线设置在基底基板上并沿一个方向延伸。 第一绝缘层设置在读出线上。 扫描线被延伸以跨过读出线并且设置在第一绝缘层上。 开关装置包括连接到扫描线的第一电极,连接到读出线的第二电极和与第二电极间隔开的第三电极。 光传感器被构造成选择性地检测预定波长的光并连接到开关装置的第三电极。

    Thin film transistor array panel and method of manufacturing the same
    9.
    发明授权
    Thin film transistor array panel and method of manufacturing the same 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US08223102B2

    公开(公告)日:2012-07-17

    申请号:US12537702

    申请日:2009-08-07

    IPC分类号: G09G3/36 G02F1/1339

    摘要: A thin film transistor array panel including a substrate, gate lines and data lines formed on the substrate, and thin film transistors each with a control terminal, an input terminal, and an output terminal. The control and input terminals of the thin film transistor are connected to the gate and data lines. A barrier rib is formed on the gate lines, the data lines, and the thin film transistors. The output terminal of the thin film transistor has an opening, and a portion of the barrier rib formed on the output terminal has an output opening. The barrier rib output terminal portion has the same pattern as the output terminal. A barrier rib for forming contact holes is formed through exposing an organic layer formed on a passivation layer to light from the backside of a substrate using drain electrodes with openings as a light blocking film.

    摘要翻译: 一种薄膜晶体管阵列面板,包括基板,形成在基板上的栅极线和数据线以及各自具有控制端子,输入端子和输出端子的薄膜晶体管。 薄膜晶体管的控制和输入端子连接到栅极和数据线。 在栅极线,数据线和薄膜晶体管上形成障壁。 薄膜晶体管的输出端子具有开口,并且形成在输出端子上的阻挡肋的一部分具有输出开口。 隔壁输出端子部分具有与输出端子相同的图案。 用于形成接触孔的隔壁通过使用具有开口的漏极作为遮光膜将形成在钝化层上的有机层暴露于来自衬底背面的光而形成。