公开(公告)号：US20170141271A1

公开(公告)日：2017-05-18

申请号：US15418670

申请日：2017-01-27

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Xinghua LIANG ,  Hongquan HE ,  Chia-en LEE ,  Te-Ling HSIA ,  Su-hui LIN ,  Chen-ke HSU

IPC: H01L33/46 ,  H01L33/00 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/005 ,  H01L33/38 ,  H01L33/405 ,  H01L33/50 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A light-emitting diode (LED) structure includes a substrate; a first semiconductor layer on the substrate; a light emitting layer on the first semiconductor layer; a second semiconductor layer on the light emitting layer; and an electrode on the semiconductor layer composed of a body and an extension body, wherein, the electrode extension portion is in a certain angle with the contacting semiconductor layer and separates the electrode body from the light emitted to its top surface and sides with a semi-wrapping structure.